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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 15 of 15  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED
(Workshop)
2012-06-27
13:15
Okinawa Okinawa Seinen-kaikan Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors
Sang Wan Kim (Seoul National Univ.), Woo Young Choi (Sogang Univ.), Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park (Seoul National Univ.)
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low o... [more]
SDM, ED
(Workshop)
2012-06-27
14:15
Okinawa Okinawa Seinen-kaikan Control Effect of New Optimized Structure of Planar Thin Floating Gate (FG) NAND Flash to Fringing Field
Do-Bin Kim, Yoon Kim, Se Hwan Park, Wandong Kim, Joo Yun Seo, Seung-Hyun Kim, Byung-Gook Park (Seoul National Univ.)
As cell size of floating gate (FG) type NAND flash memory shrinks, formation of structure which has control gate wrappin... [more]
SDM, ED
(Workshop)
2012-06-29
10:15
Okinawa Okinawa Seinen-kaikan Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel
Min-Chul Sun (SNU and SEC), Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (SNU)
A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is... [more]
ED, SDM 2010-06-30
14:25
Tokyo Tokyo Inst. of Tech. Ookayama Campus A New Cone-Type 1T DRAM Cell
Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Jung Hoon Lee, Yoon Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-55 SDM2010-56
 [more] ED2010-55 SDM2010-56
pp.23-25
ED, SDM 2010-06-30
15:10
Tokyo Tokyo Inst. of Tech. Ookayama Campus Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect
Doo-Hyun Kim, Gil Sung Lee, Seongjae Cho, Jung Hoon Lee, Jang-Gn Yun, Dong Hua Li, Yoon Kim, Se Hwan Park, Won Bo Shim, Wandong Kim, Byung-Gook Park (Seoul National Univ.) ED2010-58 SDM2010-59
 [more] ED2010-58 SDM2010-59
pp.37-40
ED, SDM 2010-07-02
15:35
Tokyo Tokyo Inst. of Tech. Ookayama Campus Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect
Yoon Kim, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Se Hwan Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-99 SDM2010-100
 [more] ED2010-99 SDM2010-100
pp.217-220
ED, SDM 2010-07-02
16:00
Tokyo Tokyo Inst. of Tech. Ookayama Campus Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current
Joung-eob Lee, Kwon-Chil Kang, Jung Han Lee, Kim Kyung Wan, Byung-Gook Park (Seoul National Univ.) ED2010-121 SDM2010-122
 [more] ED2010-121 SDM2010-122
pp.315-318
SDM, ED 2009-06-24
16:45
Overseas Haeundae Grand Hotel, Busan, Korea Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier.
Joung-eob Lee, Kwon-Chil Kang, Jung-Han Lee, Byung-Gook Park (Seoul National Univ.) ED2009-65 SDM2009-60
 [more] ED2009-65 SDM2009-60
pp.67-70
SDM, ED 2009-06-26
10:00
Overseas Haeundae Grand Hotel, Busan, Korea Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory.
Yoon Kim, Seongjae Cho, Jang-Gn Yun, Il Han Park, Gil Sung Lee, Doo-Hyun Kim, Dong Hua Li, Se Hwan Park, Wandong Kim, Wonbo Shim, Byung-Gook Park (Seoul National Univ.) ED2009-96 SDM2009-91
 [more] ED2009-96 SDM2009-91
pp.197-200
SDM, ED 2009-06-26
11:45
Overseas Haeundae Grand Hotel, Busan, Korea Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device.
Seongjae Cho, Jung Hoon Lee, Yun Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2009-101 SDM2009-96
 [more] ED2009-101 SDM2009-96
pp.219-222
SDM, ED 2008-07-09
17:35
Hokkaido Kaderu2・7 Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation
Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) ED2008-53 SDM2008-72
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operati... [more] ED2008-53 SDM2008-72
pp.73-76
SDM, ED 2008-07-10
09:15
Hokkaido Kaderu2・7 Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories
Doo-Hyun Kim, Il Han Park, Byung-Gook Park (Seoul National Univ.) ED2008-55 SDM2008-74
This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calcu... [more] ED2008-55 SDM2008-74
pp.81-84
SDM, ED 2008-07-10
09:30
Hokkaido Kaderu2・7 3-dimensional Terraced NAND(3D TNAND) Flash Memory
Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-56 SDM2008-75
We propose the 3-dimensional terraced NAND flash memory. It has a vertical channel so it can be possible to make a enoug... [more] ED2008-56 SDM2008-75
pp.85-88
SDM, ED 2008-07-10
10:15
Hokkaido Kaderu2・7 Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL)
Seongjae Cho, Il Han Park, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-58 SDM2008-77
Recently, various 3-D nonvolatile memory (NVM) devices have been researched for improving the degree of integration. NVM... [more] ED2008-58 SDM2008-77
pp.95-99
SDM, ED 2008-07-10
09:15
Hokkaido Kaderu2・7 Charge Injection Path of Bottom-Contact Organic Thin-Film Transistors
Yoo Chul Kim, Keum-Dong Jung, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) ED2008-63 SDM2008-82
To investigate the charge injection path on the source/drain electrode of bottom-contact organic thin-film transistors (... [more] ED2008-63 SDM2008-82
pp.125-128
 Results 1 - 15 of 15  /   
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