Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED (Workshop) |
2012-06-27 13:15 |
Okinawa |
Okinawa Seinen-kaikan |
Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors Sang Wan Kim (Seoul National Univ.), Woo Young Choi (Sogang Univ.), Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park (Seoul National Univ.) |
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low o... [more] |
|
SDM, ED (Workshop) |
2012-06-27 14:15 |
Okinawa |
Okinawa Seinen-kaikan |
Control Effect of New Optimized Structure of Planar Thin Floating Gate (FG) NAND Flash to Fringing Field Do-Bin Kim, Yoon Kim, Se Hwan Park, Wandong Kim, Joo Yun Seo, Seung-Hyun Kim, Byung-Gook Park (Seoul National Univ.) |
As cell size of floating gate (FG) type NAND flash memory shrinks, formation of structure which has control gate wrappin... [more] |
|
SDM, ED (Workshop) |
2012-06-29 10:15 |
Okinawa |
Okinawa Seinen-kaikan |
Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel Min-Chul Sun (SNU and SEC), Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (SNU) |
A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is... [more] |
|
ED, SDM |
2010-06-30 14:25 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
A New Cone-Type 1T DRAM Cell Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Jung Hoon Lee, Yoon Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-55 SDM2010-56 |
[more] |
ED2010-55 SDM2010-56 pp.23-25 |
ED, SDM |
2010-06-30 15:10 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect Doo-Hyun Kim, Gil Sung Lee, Seongjae Cho, Jung Hoon Lee, Jang-Gn Yun, Dong Hua Li, Yoon Kim, Se Hwan Park, Won Bo Shim, Wandong Kim, Byung-Gook Park (Seoul National Univ.) ED2010-58 SDM2010-59 |
[more] |
ED2010-58 SDM2010-59 pp.37-40 |
ED, SDM |
2010-07-02 15:35 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect Yoon Kim, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Se Hwan Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-99 SDM2010-100 |
[more] |
ED2010-99 SDM2010-100 pp.217-220 |
ED, SDM |
2010-07-02 16:00 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current Joung-eob Lee, Kwon-Chil Kang, Jung Han Lee, Kim Kyung Wan, Byung-Gook Park (Seoul National Univ.) ED2010-121 SDM2010-122 |
[more] |
ED2010-121 SDM2010-122 pp.315-318 |
SDM, ED |
2009-06-24 16:45 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling Barrier. Joung-eob Lee, Kwon-Chil Kang, Jung-Han Lee, Byung-Gook Park (Seoul National Univ.) ED2009-65 SDM2009-60 |
[more] |
ED2009-65 SDM2009-60 pp.67-70 |
SDM, ED |
2009-06-26 10:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory. Yoon Kim, Seongjae Cho, Jang-Gn Yun, Il Han Park, Gil Sung Lee, Doo-Hyun Kim, Dong Hua Li, Se Hwan Park, Wandong Kim, Wonbo Shim, Byung-Gook Park (Seoul National Univ.) ED2009-96 SDM2009-91 |
[more] |
ED2009-96 SDM2009-91 pp.197-200 |
SDM, ED |
2009-06-26 11:45 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Device. Seongjae Cho, Jung Hoon Lee, Yun Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2009-101 SDM2009-96 |
[more] |
ED2009-101 SDM2009-96 pp.219-222 |
SDM, ED |
2008-07-09 17:35 |
Hokkaido |
Kaderu2・7 |
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) ED2008-53 SDM2008-72 |
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operati... [more] |
ED2008-53 SDM2008-72 pp.73-76 |
SDM, ED |
2008-07-10 09:15 |
Hokkaido |
Kaderu2・7 |
Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories Doo-Hyun Kim, Il Han Park, Byung-Gook Park (Seoul National Univ.) ED2008-55 SDM2008-74 |
This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calcu... [more] |
ED2008-55 SDM2008-74 pp.81-84 |
SDM, ED |
2008-07-10 09:30 |
Hokkaido |
Kaderu2・7 |
3-dimensional Terraced NAND(3D TNAND) Flash Memory Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-56 SDM2008-75 |
We propose the 3-dimensional terraced NAND flash memory. It has a vertical channel so it can be possible to make a enoug... [more] |
ED2008-56 SDM2008-75 pp.85-88 |
SDM, ED |
2008-07-10 10:15 |
Hokkaido |
Kaderu2・7 |
Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL) Seongjae Cho, Il Han Park, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-58 SDM2008-77 |
Recently, various 3-D nonvolatile memory (NVM) devices have been researched for improving the degree of integration. NVM... [more] |
ED2008-58 SDM2008-77 pp.95-99 |
SDM, ED |
2008-07-10 09:15 |
Hokkaido |
Kaderu2・7 |
Charge Injection Path of Bottom-Contact Organic Thin-Film Transistors Yoo Chul Kim, Keum-Dong Jung, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) ED2008-63 SDM2008-82 |
To investigate the charge injection path on the source/drain electrode of bottom-contact organic thin-film transistors (... [more] |
ED2008-63 SDM2008-82 pp.125-128 |