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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, LQE, ED | 2016-12-12 13:00 |
Kyoto | Kyoto University | Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.)  ED2016-57 CPM2016-90 LQE2016-73 |
This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky dio... [more] | ED2016-57 CPM2016-90 LQE2016-73 pp.1-4 |
| CPM, LQE, ED | 2013-11-28 11:00 |
Osaka | Texture formation by anisotropic dry etching of m-plane GaN, and light extraction efficiency improvement of textured m-plane GaN LED Toshiyuki Fujita, Atsushi Yamada, Akira Inoue, Ryo Kato, Toshiya Yokokawa (Panasonic) ED2013-65 CPM2013-124 LQE2013-100 |
[more] | ED2013-65 CPM2013-124 LQE2013-100 pp.5-9 |
|
| LQE | 2012-12-13 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1550nm/1310nm dual wavelength high power LD Shintaro Morimoto, Hiroshi Mori, Atsushi Yamada, Yasuaki Nagashima, Motoaki Fujita, Shinichi Onuki, Hiroaki Yoshidaya, Kazuaki Mise (Anritsu Devices) LQE2012-125 |
We have developed a high power 1550nm/1310nm dual wavelength laser diode, which is suitable for Optical Time Domain Refl... [more] | LQE2012-125 pp.19-22 |
| LQE, ED, CPM | 2011-11-17 16:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.) ED2011-85 CPM2011-134 LQE2011-108 |
[more] | ED2011-85 CPM2011-134 LQE2011-108 pp.61-65 |
| WIT, SP | 2009-10-29 16:00 |
Aomori | ASPAM | Classroom Note-taking System based on Automatic Speech Recognition of Lectures Norihiro Katsumaru, Tatsuya Kawahara, Yuya Akita, Shinsuke Mori (Kyoto Univ.), Atsushi Yamada (ASTEM) SP2009-53 WIT2009-59 |
We are developing an automatic speech recognition (ASR) system to assist note-taking in the classroom. We have designed... [more] | SP2009-53 WIT2009-59 pp.25-30 |
| ED | 2009-06-12 11:25 |
Tokyo | Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48 |
In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance betw... [more] | ED2009-48 pp.63-67 |
|
| DE | 2007-07-03 11:20 |
Miyagi | Akiu hot springs (Sendai) | Visualization of Realizability for Intellectual Assets
-- Visualization of Trademark Registrability based on Correlation Analysis of Multiple Similarities among Existing Data -- Kyoko Nishio (Kyoto Univ.), Shinsuke Nakajima (Nara Inst.of Science and Tech.), Atsushi Yamada, Katsumi Tanaka (Kyoto Univ.) DE2007-73 |
To be authorized as an intellectual asset, it is required for application data to be different from the registered asset... [more] | DE2007-73 pp.309-314 |
| IN, ICM, LOIS (Joint) |
2006-01-20 09:00 |
Kyoto | Kyoto Univ. | Notes on Degital WaterMark for Outline Font Atsushi Yamada, Hiroyuki Inaba (KIT) |
Recently, protecting intellectual property rights of digital scalable fonts have been one of the most important problems... [more] | OIS2005-79 pp.1-4 |
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