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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 20  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2019-08-08
10:25
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and [Invited Lecture] 3300V Scaled IGBT Switched by 5V Gate Drive
Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.) SDM2019-42 ICD2019-7
 [more] SDM2019-42 ICD2019-7
pp.31-34
SDM 2019-01-29
15:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90
Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate vo... [more] SDM2018-90
pp.39-44
SDM 2018-10-18
13:30
Miyagi Niche, Tohoku Univ. Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy
Ryo Yokogawa (Meiji Univ.), Motohiro Tomita, Takanobu Watanabe (Waseda Univ.), Atsushi Ogura (Meiji Univ.) SDM2018-61
Silicon nanowire (SiNW) is expected to be a new attractive thermoelectric material with excellent performance with low t... [more] SDM2018-61
pp.47-50
SDM 2017-10-26
10:50
Miyagi Niche, Tohoku Univ. Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2017-57
The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO... [more] SDM2017-57
pp.39-44
SDM 2017-06-20
16:10
Tokyo Campus Innovation Center Tokyo Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization
Kentaro Matsuura, Takumi Ohashi, Iriya Muneta (Tokyo Tech), Seiya Ishihara (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech)
 [more]
ED, SDM 2017-02-24
16:45
Hokkaido Centennial Hall, Hokkaido Univ. Reproduce and Prediction of Phonon in Group IV Binary Alloy Semiconductors by Lattice Dynamics Simulation
Motohiro Tomita (Waseda Univ./Meiji Univ./JSPS), Atsushi Ogura (Meiji Univ.), Takanobu Watanabe (Waseda Univ.) ED2016-141 SDM2016-158
We have developed the interatomic potential of SiGe, GeSn, and SiSn binary mixed systems to reproduce the lattice consta... [more] ED2016-141 SDM2016-158
pp.61-66
SDM 2016-06-29
11:55
Tokyo Campus Innovation Center Tokyo Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) SDM2016-37
We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition... [more] SDM2016-37
pp.27-32
SDM 2016-06-29
16:40
Tokyo Campus Innovation Center Tokyo MoS2 film formation by RF magnetron sputtering for thin film transistors
Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) SDM2016-46
Multi-layered MoS2 has been expected as a new candidate for complementary TFT material owing to its promising characteri... [more] SDM2016-46
pp.75-78
SDM 2015-06-19
15:15
Aichi VBL, Nagoya Univ. Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method
Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] SDM2015-51
pp.69-73
SDM 2014-10-17
11:10
Miyagi Niche, Tohoku Univ. Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD
Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91
Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices.
We achieved to grow ... [more]
SDM2014-91
pp.41-45
SDM 2013-10-18
10:30
Miyagi Niche, Tohoku Univ. Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface
Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) SDM2013-94
(To be available after the conference date) [more] SDM2013-94
pp.33-36
SDM 2013-06-18
10:35
Tokyo Kikai-Shinko-Kaikan Bldg. Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge
Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS) SDM2013-48
As a alternative of Si channel, the Ge channel has been proposed and has attracted much attention because of high electr... [more] SDM2013-48
pp.25-28
SDM 2012-10-25
16:10
Miyagi Tohoku Univ. (Niche) Evaluation of crystalline phase in SiO2 thin film using grazing incidence X-ray diffraction
Kohki Nagata, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Koganezawa, Ichiro Hirosawa (JASRI), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe) SDM2012-91
Crystalline like structures in SiO2 thin films formed using oxygen molecules/radicals were investigated by X-ray reflect... [more] SDM2012-91
pp.11-14
SDM 2011-10-21
09:50
Miyagi Tohoku Univ. (Niche) Channel strain measurements in 32nm-node CMOSFETs
Munehisa Takei, Hiroki Hashiguchi, Takuya Yamaguchi, Daisuke Kosemura, Kohki Nagata, Atsushi Ogura (Meiji Univ.) SDM2011-104
We performed strain analyses for 32-nm-node MPU by Raman measurements in conjunction with TEM observation. The channel s... [more] SDM2011-104
pp.43-48
SDM 2010-10-21
14:00
Miyagi Tohoku University [Invited Talk] Channel strain evaluation for advanced LSI
Atsushi Ogura, Daisuke Kosemura, Munehisa Takei, Motohiro Tomita (Meiji Univ.) SDM2010-152
 [more] SDM2010-152
pp.1-6
SDM 2010-10-21
15:00
Miyagi Tohoku University Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens
Daisuke Kosemura, Atsushi Ogura (Meiji Univ.) SDM2010-153
Raman spectroscopy allows us to precisely evaluate stress with relatively high-spatial resolution and non-destructively.... [more] SDM2010-153
pp.7-12
SDM 2010-10-22
16:20
Miyagi Tohoku University Strain evaluation in Si at atomically flat SiO2/Si interface
Maki Hattori (Meiji Univ.), Daisuke Kosemura (Meiji Univ./JSPS), Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe), Tomoyuki Koganezawa (JASRI) SDM2010-170
We performed Raman spectroscopy and in-plane XRD measurement to clarify the structure and strain in Si at and near an at... [more] SDM2010-170
pp.71-75
ICD, SDM 2010-08-27
16:25
Hokkaido Sapporo Center for Gender Equality On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs
Yongxun Liu, Kazuhiko Endo, Shinich Ouchi (AIST), Takahiro Kamei (Meiji Univ.), Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa (AIST), Tetsuro Hayashida (Meiji Univ.), Kunihiro Sakamoto, Takashi Matsukawa (AIST), Atsushi Ogura (Meiji Univ.), Meishoku Masahara (AIST) SDM2010-151 ICD2010-66
The threshold voltage (Vt) variability in scaled FinFETs with gate length down to 20 nm was systematically investigated.... [more] SDM2010-151 ICD2010-66
pp.149-154
SDM 2008-06-10
09:30
Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Transconductance enhancement of strained-Si nanowire FETs
Aya Seike, Tomoyuki Tange, Itsutaku Sano, Yuuki Sugiura, Ikushin Tsuchida, Hiromichi Ohta, Takanobu Watanabe (Waseda Univ.), Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Iwao Ohdomari (Waseda Univ.) SDM2008-48
We have demonstrated improved performance for Si nanowire FETs for CMOS operation by introducing tensile stress into the... [more] SDM2008-48
pp.35-39
SDM, OME 2008-04-11
11:25
Okinawa Okinawa Seinen Kaikan Evaluation of stress and crystallinity of laser crystallization polysilicon thin film using UV/Visible Raman spectroscopy
Yasuto Kakemura, Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Takashi Noguchi (Univ. of the Ryukyus) SDM2008-6 OME2008-6
Low temperature polysilicon (LTPS) thin film is a key material for the systems-on-glass achievement. Depth and in-plane ... [more] SDM2008-6 OME2008-6
pp.27-32
 Results 1 - 20 of 20  /   
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