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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2014-11-28
Osaka   Enhancement of photoluminescence intensity in Eu-doped GaN by microcavity
Tomohiro Inaba, Ryuta Wakamatsu, Dong-gun Lee, Takanori Kojima, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2014-95 CPM2014-152 LQE2014-123
Enhancement of Eu-related luminescence intensity in Eu,O-codoped GaN (GaN:Eu,O) was demonstrated by embedding a GaN:Eu,O... [more] ED2014-95 CPM2014-152 LQE2014-123
CPM, LQE, ED 2013-11-29
Osaka   OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures
Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-77 CPM2013-136 LQE2013-112
We have grown Eu-doped GaN/AlGaN multiple quantum well (MQW:Eu) structures by organometallic vapor-phase epitaxy, and in... [more] ED2013-77 CPM2013-136 LQE2013-112
CPM, LQE, ED 2013-11-29
Osaka   Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy
Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2013-78 CPM2013-137 LQE2013-113
 [more] ED2013-78 CPM2013-137 LQE2013-113
CPM 2010-10-28
Nagano   Structure and electric properties of RF-sputtered p-type nickel oxide thin films
Atsushi Nagata, Kazuo Uchida, Atsushi Koizumi, Hiroshi Ono, Shinji Nozaki (UEC) CPM2010-96
NiOx as a transparent oxide semiconductor has been known long to show an intrinsic p-type conductivity although most of ... [more] CPM2010-96
ED, MW 2008-01-17
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement in reliability of InGaP/GaAs HBT's by ledge passivation
Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148
Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced... [more] ED2007-217 MW2007-148
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