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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2008-10-23 13:25 |
Fukuoka |
Kyushu Institute of Technology |
High-Voltage AlGaN/GaN Schottky Barrier Diodes on Si Substrate with Low-Temperature GaN Cap Layer for Edge Termination Atsushi Kamada (NJRC), Takashi Egawa (NIT) ED2008-149 |
[more] |
ED2008-149 pp.143-148 |
ED, MW |
2006-01-19 13:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
AlGaN/GaN HFETs with a low-temperature GaN cap layer Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) |
AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap lay... [more] |
ED2005-203 MW2005-157 pp.23-27 |
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