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 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-01-29
13:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Analysis of Transistor Characteristics in Distribution Tails beyond ±5.4σ of 11 Billion Transistors
Tomoko Mizutani, Anil Kumar, Toshiro Hiramoto (Univ. of Tokyo) SDM2013-142
Transistors in distribution tails of 11G (11 billion) transistors were intensively measured and compared with transistor... [more] SDM2013-142
pp.31-34
SDM, ICD 2013-08-02
09:00
Ishikawa Kanazawa University SRAM Cell Stability Parameter: Noise Margin or Vmin?
Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) SDM2013-74 ICD2013-56
This paper reports the comprehensive analysis of the stability parameter of SRAM cells. Results show that even if noise ... [more] SDM2013-74 ICD2013-56
pp.43-46
ICD, SDM 2012-08-02
10:00
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Self-Improvement of Cell Stability in SRAM by Post Fabrication Technique
Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-65 ICD2012-33
The post fabrication technique for self-improvement of SRAM cell stability is validated by experiment using 1k DMA SRAM ... [more] SDM2012-65 ICD2012-33
pp.13-16
SDM, ED
(Workshop)
2012-06-29
11:45
Okinawa Okinawa Seinen-kaikan Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs
Tomoko Mizutani, Anil Kumar, Toshiro Hiramoto (Univ. of Tokyo)
Distribution of current onset voltage (COV) as well as threshold voltage (VTH) and drain induced barrier lowering (DIBL)... [more]
SDM, ED
(Workshop)
2012-06-29
12:00
Okinawa Okinawa Seinen-kaikan Reliability Measurement of PFETs under Post Fabrication Self-Improvement Scheme for SRAM
Nurul Ezaila Alias, Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo)
The negative bias temperature instability (NBTI) reliability of PFETs is measured under the post fabrication SRAM self-i... [more]
SDM, ICD 2011-08-26
09:00
Toyama Toyama kenminkaikan Evaluation of Variability in High-k/Metal-Gate MOSFET using Takeuchi Plot
Tomoko Mizutani, Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-83 ICD2011-51
 [more] SDM2011-83 ICD2011-51
pp.65-68
SDM, ICD 2011-08-26
09:25
Toyama Toyama kenminkaikan Statistical Analysis of DIBL and Current-Onset Voltage (COV) Variability in Scaled MOSFETs
Anil Kumar, Tomoko Mizutani (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-84 ICD2011-52
 [more] SDM2011-84 ICD2011-52
pp.69-73
ICD, SDM 2010-08-27
16:00
Hokkaido Sapporo Center for Gender Equality Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] SDM2010-150 ICD2010-65
pp.143-148
 Results 1 - 8 of 8  /   
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