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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2014-01-29 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Analysis of Transistor Characteristics in Distribution Tails beyond ±5.4σ of 11 Billion Transistors Tomoko Mizutani, Anil Kumar, Toshiro Hiramoto (Univ. of Tokyo)  SDM2013-142 |
Transistors in distribution tails of 11G (11 billion) transistors were intensively measured and compared with transistor... [more] | SDM2013-142 pp.31-34 |
| SDM, ICD | 2013-08-02 09:00 |
Ishikawa | Kanazawa University | SRAM Cell Stability Parameter: Noise Margin or Vmin? Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) SDM2013-74 ICD2013-56 |
This paper reports the comprehensive analysis of the stability parameter of SRAM cells. Results show that even if noise ... [more] | SDM2013-74 ICD2013-56 pp.43-46 |
| ICD, SDM | 2012-08-02 10:00 |
Hokkaido | Sapporo Center for Gender Equality, Sapporo, Hokkaido | Self-Improvement of Cell Stability in SRAM by Post Fabrication Technique Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-65 ICD2012-33 |
The post fabrication technique for self-improvement of SRAM cell stability is validated by experiment using 1k DMA SRAM ... [more] | SDM2012-65 ICD2012-33 pp.13-16 |
| SDM, ED (Workshop) |
2012-06-29 11:45 |
Okinawa | Okinawa Seinen-kaikan | Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs Tomoko Mizutani, Anil Kumar, Toshiro Hiramoto (Univ. of Tokyo) |
Distribution of current onset voltage (COV) as well as threshold voltage (VTH) and drain induced barrier lowering (DIBL)... [more] | |
| SDM, ED (Workshop) |
2012-06-29 12:00 |
Okinawa | Okinawa Seinen-kaikan | Reliability Measurement of PFETs under Post Fabrication Self-Improvement Scheme for SRAM Nurul Ezaila Alias, Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) |
The negative bias temperature instability (NBTI) reliability of PFETs is measured under the post fabrication SRAM self-i... [more] | |
| SDM, ICD | 2011-08-26 09:00 |
Toyama | Toyama kenminkaikan | Evaluation of Variability in High-k/Metal-Gate MOSFET using Takeuchi Plot Tomoko Mizutani, Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-83 ICD2011-51 |
[more] | SDM2011-83 ICD2011-51 pp.65-68 |
| SDM, ICD | 2011-08-26 09:25 |
Toyama | Toyama kenminkaikan | Statistical Analysis of DIBL and Current-Onset Voltage (COV) Variability in Scaled MOSFETs Anil Kumar, Tomoko Mizutani (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-84 ICD2011-52 |
[more] | SDM2011-84 ICD2011-52 pp.69-73 |
| ICD, SDM | 2010-08-27 16:00 |
Hokkaido | Sapporo Center for Gender Equality | Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65 |
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] | SDM2010-150 ICD2010-65 pp.143-148 |
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