IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, LQE 2022-11-24
14:55
Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)
Fabrication and characterization of AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate
SakuraTanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2022-35 CPM2022-60 LQE2022-68
 [more] ED2022-35 CPM2022-60 LQE2022-68
pp.53-56
ED, CPM, LQE 2021-11-26
14:55
Online Online High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer
Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] ED2021-32 CPM2021-66 LQE2021-44
pp.79-82
ED, CPM, LQE 2021-11-26
16:25
Online Online Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching.
Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.) ED2021-35 CPM2021-69 LQE2021-47
We utilized photo-electrochemical (PEC) etching for fabrication of recessed-gate AlGaInN/AlGaN MIS HFETs. The PEC reacti... [more] ED2021-35 CPM2021-69 LQE2021-47
pp.91-94
LQE, CPM, ED 2020-11-26
13:30
Online Online High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts
Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] ED2020-7 CPM2020-28 LQE2020-58
pp.25-28
MW, EMCJ 2010-10-21
13:05
Akita Akita Univ. Equivalent Transformation of Coupled Filter Consist of Parallel Connected Lowpass Sections by Using Similarity Transformation of Coupling Matrix
Akiyoshi Inoue, Toshikazu Sekine, Yasuhiro Takahashi (Gifu Univ.) EMCJ2010-52 MW2010-87
The coupled structure changes if the similar transformations are given to
the coupled filter. However, the transmission... [more]
EMCJ2010-52 MW2010-87
pp.1-6
MW 2010-03-04
10:55
Kyoto Ryukoku Univ. A General Synthesis Method of Coupled Filter with Transmission Zeros Consist of Parallel Connected Lowpass Sectons
Akiyoshi Inoue, Toshikazu Sekine, Yasuhiro Takahashi (Gifu Univ) MW2009-184
A general synthesis method of coupled filter with symmetrical or asymmetrical transmission zeros consist of parallel con... [more] MW2009-184
pp.31-36
EMCJ, MW, IEE-MAG 2009-10-23
11:50
Iwate Iwate Univ. A Synthesis Method of Coupled Filter with asymmetrical transmission zeros Consist of Parallel Connected Lowpass Sectons
Akiyoshi Inoue, Toshikazu Sekine, Yasuhiro Takahashi (Gifu Univ) EMCJ2009-66 MW2009-115
A synthesis method of coupled filter with asymmetrical transmission zeros consist of parallel connected lowpass sectons ... [more] EMCJ2009-66 MW2009-115
pp.129-134
 Results 1 - 7 of 7  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan