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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 17 of 17  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EID, SDM, ITE-IDY [detail] 2018-12-25
Kyoto   Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate
Hiroki Utsumi (Tohoku Gakuin Univ.), Kuninori Kitahara, Shinya Tsukada (Shimane Univ.), Hitoshi Suzuki, Akito Hara (Tohoku Gakuin Univ.) EID2018-4 SDM2018-77
Polycrystalline-germanium (poly-Ge) thin-film transistor (TFT) with double gate (DG) structure was fabricated via metal ... [more] EID2018-4 SDM2018-77
SDM, OME 2018-04-07
Okinawa Okinawaken Seinen Kaikan [Invited Talk] High Performance and Functional Group-Ⅳ Thin-Film Transistors
Akito Hara, Hiroki Utsumi, Naoki Nishiguchi, Ryo Miyazaki (Tohoku Gakuin Univ.) SDM2018-5 OME2018-5
We have fabricated self-aligned planar double-gate (DG) or self-aligned planar four-terminal (4T) polycrystalline german... [more] SDM2018-5 OME2018-5
SDM, EID 2017-12-22
Kyoto Kyoto University Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate
Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.) EID2017-24 SDM2017-85
Germanium tin (GeSn) is known as a new semiconductor device material. We used metal induced crystallization (MIC) using ... [more] EID2017-24 SDM2017-85
OME, SDM 2017-04-20
Kagoshima Tatsugochou Shougaigakushuu Center Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare
Hiroki Utsumi, Taisei Sasaki, Shunya Sekiguchi, Shoya Takeuchi, Akito Hara (Tohoku Gakuin Univ.) SDM2017-1 OME2017-1
Flexible devices and wearable devices are receiving more attention due to their contributions in realizing the Internet ... [more] SDM2017-1 OME2017-1
SDM, EID 2016-12-12
Nara NAIST CMOS Inverter Consisting of Self-Aligned Four-Terminal Planar Metal Double-Gate Low-Temperature Poly-Si TFTs on Glass Substrate
Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) EID2016-19 SDM2016-100
 [more] EID2016-19 SDM2016-100
SDM, OME 2016-04-09
Okinawa Okinawa Prefectural Museum & Art Museum Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack
Syota Nibe, Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) SDM2016-15 OME2016-15
Self-aligned four-terminal (4T) metal double-gate (MeDG) low-temperature (LT) polycrystalline-silicon (poly-Si) thin fil... [more] SDM2016-15 OME2016-15
EID, SDM 2015-12-14
Kyoto Ryukoku University, Avanti Kyoto Hall Self-Aligned Metal Double Gate Low-Temperature Poly-Ge TFT with Thin Channel Layer on a Glass Substrate
Yuya Nishimura, Akito Hara (Tohoku Gakuin Univ.) EID2015-19 SDM2015-102
 [more] EID2015-19 SDM2015-102
OME, SDM 2015-04-30
Okinawa Oh-hama Nobumoto Memorial Hall Self-Aligned Four-Terminal Planar Metal Double-Gate CLC LT Poly-Si TFTs on Glass Substrate
Hiroki Ohsawa, Shun Sasaki, Akito Hara (Tohoku Gakuin Univ.) SDM2015-16 OME2015-16
 [more] SDM2015-16 OME2015-16
SDM, EID 2014-12-12
Kyoto Kyoto University Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer
Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) EID2014-23 SDM2014-118
To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k ... [more] EID2014-23 SDM2014-118
SDM, OME 2014-04-11
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. [Invited Talk] High performance LT poly-Si TFTs on glass substrate by using lateral large grained thin poly-Si film
Akito Hara, Shinya Kamo, Shun Sasaki, Tatsuya Meguro (Tohoku Gakuin Univ.), Tadashi Sato (Hiroshima Univ.), Kuninori Kitahara (Shimane Univ.) SDM2014-10 OME2014-10
 [more] SDM2014-10 OME2014-10
SDM 2013-12-13
Nara NAIST Low-Temprature CLC Poly-Si TFTs with Sputtered Al2O3 Gate Dielectric Layer
Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) SDM2013-124
A high-k gate dielectric is a technology booster for enhancing the performance of low-temperature (LT) polycrystalline-s... [more] SDM2013-124
SDM, OME 2012-04-27
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. [Invited Talk] Growth of Silicon and Silicon-Germanium Thin Films on Glass Substrates by Continuous-Wave Laser Lateral Crystallization
Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.) SDM2012-5 OME2012-5
Flow-shaped growth of Si and SiGe thin films on glass substrate was achieved by continuous wave laser lateral crystalliz... [more] SDM2012-5 OME2012-5
SDM, OME 2012-04-27
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate
Hiroyuki Ogata, Kenji Ichijo, Kenji Kondo, Yasunori Okabe, Yusuke Shika, Shinya Kamo, Akito Hara (Tohoku Gakuin Univ.) SDM2012-9 OME2012-9
A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is one of the recent topics in the field of Si ... [more] SDM2012-9 OME2012-9
SDM 2010-12-17
Kyoto Kyoto Univ. (Katsura) Lateral Large-Grained Low-Temperature Poly-Si1-xGex TFTs on Glass Substrate
Yasunori Okabe, Kenji Kondo (Tohoku Gakuin Univ.), Kenta Hirose, Junki Suzuki, Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.) SDM2010-199
It is recognized that field-effect mobility of TFTs increases with grain size. We reported previously that it is possibl... [more] SDM2010-199
SDM, OME 2010-04-23
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Laser-activated Top-gate μc-Si:H TFTs
Akito Hara, Jun Shibuya, Tadashi Sato (Tohoku Gakuin Univ.), Kuninori Kitahara (Shimane Univ.) SDM2010-2 OME2010-2
The aim of this research is to realize the monolithic integration of top-gate (TG) hydrogenated microcrystalline-silicon... [more] SDM2010-2 OME2010-2
SDM 2009-12-04
Nara NAIST Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate
Akito Hara, Tsutomu Sato (Tohoku Gakuin Univ.) SDM2009-163
Gettering of metal impurities in thin poly-Si films is one of the key techniques for realizing high-performance, high-re... [more] SDM2009-163
SDM 2007-12-14
Nara Nara Institute Science and Technology Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method
Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.) SDM2007-229
We succeeded in the observation of dislocation motion in a thin Si1-xGex film (thickness = 56 nm and x = 0.24) on a Si s... [more] SDM2007-229
 Results 1 - 17 of 17  /   
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