| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-06-22 16:00 |
Online | Online | [Invited Lecture]
For understanding ferroelectric HfO2 toward its device applications Akira Toriumi  SDM2021-26 |
[more] | SDM2021-26 pp.17-20 |
| SDM | 2019-06-21 15:45 |
Aichi | Nagoya Univ. VBL3F | New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST) SDM2019-32 |
The characteristics of the VO2-channel Mott transistor is systematically studied. The transfer characteristics shows a c... [more] | SDM2019-32 pp.35-38 |
| SDM | 2019-01-29 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81 |
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] | SDM2018-81 pp.1-4 |
| SDM | 2019-01-29 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor Li Xiuyan, Akira Toriumi (Univ. of Tokyo) SDM2018-83 |
[more] | SDM2018-83 pp.9-12 |
| SDM | 2018-06-25 16:15 |
Aichi | Nagoya Univ. VBL3F | Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo) SDM2018-25 |
Ferroelectric HfO2-based thin films are attractive memory materials for application in LSI. These ferroelectrics have la... [more] | SDM2018-25 pp.43-46 |
| SDM | 2018-01-30 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2017-91 |
[more] | SDM2017-91 pp.1-4 |
| SDM | 2018-01-30 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96 |
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] | SDM2017-96 pp.21-24 |
| SDM, ICD, ITE-IST [detail] | 2017-08-02 10:50 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | [Invited Talk]
Capacitor-less neuron circuits using metal-insulator transition devices Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2017-44 ICD2017-32 |
The metal-insulator transition of VO2 is exploited in neuromorphic circuits, resulting in a capacitor-less neuron circui... [more] | SDM2017-44 ICD2017-32 pp.107-108 |
| SDM | 2017-01-30 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Fully Coupled 3-D Device Simulation of Negative Capacitance FinFETs for Sub 10 nm Integration Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-133 |
Subthreshold operation of negative capacitance FinFETs (NC-FinFETs) at sub 10 nm gate length are analyzed with a newly d... [more] | SDM2016-133 pp.13-16 |
| SDM | 2017-01-30 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Novel Functional Passive Element for Future Analogue Signal Processing
-- Fabrication and Application of the VO2 Volatile Switch -- Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2016-138 |
Electronic devices for internet of things (IoT) need to reconcile high functionality with low cost and simplicity. This ... [more] | SDM2016-138 pp.33-36 |
| SDM | 2016-11-10 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Free carrier density dependent band gap and phonon frequency in germanium Shoichi Kabuyanagi, Akira Toriumi (The Univ. of Tokyo) SDM2016-82 |
[more] | SDM2016-82 pp.23-26 |
| SDM | 2016-06-29 10:40 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-34 |
This paper discusses a design of fully depleted silicon-on-insulator field-effect transistors with ferroelectric gate in... [more] | SDM2016-34 pp.9-13 |
| SDM | 2015-01-27 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Analytical formulation of interfacial SiO2scavenging in HfO2/SiO2/Si stacks Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-135 |
[more] | SDM2014-135 pp.1-4 |
| SDM | 2015-01-27 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs ChoongHyun Lee, Tomonori Nishimura, Cimang Lu, Shoichi Kabuyanagi, Akira Toriumi (Univ. of Tokyo) SDM2014-136 |
[more] | SDM2014-136 pp.5-8 |
| SDM | 2014-11-07 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2014-107 |
[more] | SDM2014-107 pp.65-70 |
| SDM | 2014-06-19 15:00 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Ultra-sharp metal-to-insulator transition in a single crystal VO2 thin film by controlling the local stress of transition Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-55 |
[more] | SDM2014-55 pp.65-67 |
| SDM | 2014-01-29 09:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Carrier response in band gap and multiband transport in bilayer grapheme under the ultra-high displacement Kosuke Nagashio, K Kanayama, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2013-135 |
[more] | SDM2013-135 pp.1-4 |
| SDM | 2014-01-29 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2013-136 |
We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility was dram... [more] | SDM2013-136 pp.5-8 |
| SDM | 2010-06-22 14:35 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Control of GeO2 Properties and Improvement of Ge/GeO2 Interface Characteristics Based on the Understanding of Geo2/Ge Interface Reaction Koji Kita (Univ. of Tokyo/JST-CREST), Sheng Kai Wang, ChoongHyun Lee, Mahoro Yoshida (Univ. of Tokyo), Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST) SDM2010-43 |
[more] | SDM2010-43 pp.55-60 |
| SDM | 2009-06-19 13:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Fermi Level Pinning at Metal/Germanium Interface and its Controllability Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST) SDM2009-32 |
The purpose is to understand metal/germanium (Ge) junction characteristics to control Schottky barrier height at metal/G... [more] | SDM2009-32 pp.33-38 |
[Return to Top Page]