IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 19 of 19  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2014-11-27
11:25
Osaka   Critical thickness for phase separation in MOVPE-grown thick InGaN
Kazuki Kodama, Tanvir Md Hasan, Hiroyuki Nomura (Univ. of Fukui), Naoteru Shigekawa (Osaka City Univ.), Akio Yamamoto, Masaaki Kuzuhara (Univ. of Fukui) ED2014-75 CPM2014-132 LQE2014-103
This paper reports phase separation in thick (~1 μm) MOVPE InxGa1-xN (x = 0.2~0.4) films grown by MOVPE at 570~750℃ on A... [more] ED2014-75 CPM2014-132 LQE2014-103
pp.9-14
AP, WPT
(Joint)
2014-10-17
15:20
Hokkaido Hokkaido University, Clark Memorial Student Center Study of Wireless Power Transfer via the salt water on the metal shaft
Katsuei Ichikawa, Takatoshi Shirosugi, Hitoshi Akiyama, Akio Yamamoto, Masaki Noda (Hitachi) WPT2014-47
Since there is no mechanical contact wireless power transfer using the magnetic coupling is the technique attracting att... [more] WPT2014-47
pp.59-64
MW, AP
(Joint)
2013-09-13
09:30
Tokyo NHK Science Tech. Research Lab. Development of Tunable Duplexer with Variable Frequency Resonators
Kazuki Ikeda, Masazumi Tone, Hiroyuki Temmein, Atsushi Isobe, Akio Yamamoto, Naoki Matsushima (Hitachi), Takashi Shiba, Osamu Hikino, Tatsuhiko Ishizaki (HMEL) MW2013-90
We proposed a tunable duplexer consisted of variable frequency resonator with a troidal air core inductor and a variable... [more] MW2013-90
pp.11-16
CPM 2011-10-26
14:55
Fukui Fukui Univ. MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range
Toru Hotta, Kenichi Sugita, A. G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) CPM2011-113
MOVPE growth of InAlN and InGaN has been studied in order to develop basic technologies for InAlN/InGaN heterostructure ... [more] CPM2011-113
pp.23-26
CPM 2011-10-26
15:20
Fukui Fukui Univ. Anti-corrosive stainless steel separator coated with MOCVD InGaN for polymer electrolyte fuel cell (PEFC)
Masanori Shimahashi (Eyetec), Kazuya Matsui (Univ. of Fukui), Koji Okada (Eyetec), Kenichi Sugita (Univ. of Fukui), Hajime Sasaki (Eyetec), Akio Yamamoto (Univ. of Fukui) CPM2011-114
This paper reports the application of InGaN films to a polymer electrolyte fuel cells (PEFC) stainless steel (SS) separa... [more] CPM2011-114
pp.27-30
CPM 2011-10-27
10:20
Fukui Fukui Univ. MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content
Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) CPM2011-120
This paper reports on the MOVPE growth of InxGa1-xN with x up to ~0.49 on AlN/Si(111) substrates. Single-crystalline Inx... [more] CPM2011-120
pp.55-58
CPM 2011-10-27
10:45
Fukui Fukui Univ. MOVPE growth of InN using NH3 decomposition catalyst
Dazio Hironaga, Kenichi Sugita, A.g. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ.of Fukui) CPM2011-121
In order to increase the NH3 decomposition rate in the MOVPE growth of InN, the employment of Pt catalyst has been propo... [more] CPM2011-121
pp.59-62
TL 2010-05-28
14:35
Tokyo Kikai-Shinko-Kaikan Bldg Extensive Reading and Its Fruits -- Reading Stamina is a reservoir of intelligence --
Akio Yamamoto (Gakushuin Boys' Senior High School/Gakushuin Univ.) TL2010-7
Stamina is considered necessary not only for physical exercises but also intelligent activities such as language use in ... [more] TL2010-7
pp.33-37
TL 2009-11-21
11:15
Tokyo   Affordance and Foreign Language Learning -- Language Use in Different Situations --
Akio Yamamoto (Gakushuin Boys' High) TL2009-31
This presentation focuses on the difficulty in using knowledge in different places, which is considered “what we have le... [more] TL2009-31
pp.13-18
CPM, ED, LQE 2007-10-12
16:30
Fukui Fukui Univ. Atmospheric-pressure MOVPE growth of In-rich (1~0.5) InAlN
Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Fukui Univ.) ED2007-178 CPM2007-104 LQE2007-79
 [more] ED2007-178 CPM2007-104 LQE2007-79
pp.109-112
CPM 2006-11-10
10:15
Ishikawa Kanazawa Univ. Degradation of MOVPE InN during the growth
Kenichi Sugita, Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
 [more] CPM2006-125
pp.71-74
CPM 2005-11-12
09:00
Fukui   KOH etching effects of GaN buffer in MOVPE growth of InN on sapphire substrate
Yasuhiko Nagai, Hiroshi Miwa, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
The KOH etching effects of a GaN buffer in the MOVPE growth of InN on sapphire have been studied. With increasing etchin... [more] CPM2005-161
pp.1-4
CPM 2005-11-12
09:25
Fukui   Growth and Characterization of MOVPE InN Films on Bulk GaN Substrate
Wen-Jun Wang, Hiroshi Miwa, Yasuhiko Nagai, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
Single-crystalline In- and N-polarity InN films on bulk GaN substrate were successfully grown by MOVPE. The InN layers g... [more] CPM2005-162
pp.5-8
CPM 2005-11-12
09:50
Fukui   Photocatalytic H2S decomposition by InN1-xOx films grown by ArF laser-assisted MOCVD
Masayoshi Miyanishi (Univ. of Fukui), Naoya Takahashi (Fukui NCT), Takahiro Kobayashi (Univ. of Fukui), Katsumi Takayama (Fukui NCT), Yukio Nambo (Nicca), Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
An InN1-xOx, which is an alloy of InN with In2O3, is grown at a low (RT-500ºC) temperature by the ArF excimer laser... [more] CPM2005-163
pp.9-12
CPM 2005-11-12
10:15
Fukui   MOVPE growth of high-quality InN on 3c-SiC/Si template
Myung Soo Cho, Takahiro Kobayashi, Naoki Sawazaki, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center)
In this paper, We describe the comparison between MOVPE InN films grown on a 3c-SiC/Si(111) template formed by C+-ion im... [more] CPM2005-164
pp.13-16
CPM 2005-11-12
10:40
Fukui   MOVPE growth of GaN on 3c-SiC/Si template -- Nitridation effects of template surface --
Naoki Sawazaki, Takahiro Kobayashi, Myung Soo Cho, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center)
When a MOVPE GaN film is grown on a 3c-SiC/Si template formed by C+-ion implantation into Si, the surface of the grown f... [more] CPM2005-165
pp.17-20
LQE, ED, CPM 2005-10-13
09:50
Shiga Ritsumeikan Univ. NH3/TMI molar ratio dependence of electrical and optical properties for atmospheric-pressure MOVPE InN
Hiroshi Miwa, Yasuhiko Nagai, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
 [more] ED2005-119 CPM2005-106 LQE2005-46
pp.5-8
LQE, ED, CPM 2005-10-13
12:00
Shiga Ritsumeikan Univ. Mg doping of MOVPE InN using CP2Mg
Yasuhiko Nagai, Hiroshi Miwa, , Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
 [more] ED2005-125 CPM2005-112 LQE2005-52
pp.35-38
MVE 2005-06-03
14:15
Tokyo Sanjo Hall, Univ. of Tokyo Information presentation method by Teddy bear-like Robotic User Interface
Akio Yamamoto, Noriyoshi Shimizu, Naoya Koizumi, Maki Sugimoto, Hideaki Nii (UEC), Shoichi Hasegawa (TITech), Masahiko Inami (UEC/JST)
 [more] MVE2005-10
pp.61-64
 Results 1 - 19 of 19  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan