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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
Online Online Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT
Hidemasa Takahashi, Yuji Ando (Nagoya Univ.), Yoichi Tsuchiya, Akio Wakejima (NITECH), Hiroaki Hayashi, Eiji Yagyu (Mitsubishi Electric), Koichi Kikkawa, Naoki Sakai, Kenji Itoh (Kanazawa Institute of Tech), Jun Suda (Nagoya Univ.) WPT2020-19
As a device for wireless power transmission, we are developing a new rectenna that uses a gated anode diode (GAD) that s... [more] WPT2020-19
Kyoto Kyoto Univ. Uji Campus GaN diode rectifier with recessed gate FET for wireless power transfer
Jumpei Sumino, Yuya Ikedo (NITech), Yamato Osada, Ryuichiro Kamimura (ULVAC), Akio Wakejima (NITech) WPT2018-30
(To be available after the conference date) [more] WPT2018-30
ED, LQE, CPM 2012-11-29
Osaka Osaka City University Evaluation of transient current of GaN HEMTs on Si under light
Takuya Joka, Akio Wakejima, Takashi Egawa (NIT) ED2012-72 CPM2012-129 LQE2012-100
We evaluated a transient response of a drain current (Id(t)) of an AlGaN/GaN HEMT on a Si substrate under light irradiat... [more] ED2012-72 CPM2012-129 LQE2012-100
ED, MW 2012-01-12
Tokyo Kikai-Shinko-Kaikan Bldg Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
Amalraj Frank Wilson, Akio Wakejima, Takashi Egawa (Nagoya Inst. of Tech.) ED2011-134 MW2011-157
 [more] ED2011-134 MW2011-157
LQE, ED, CPM 2011-11-17
Kyoto Katsura Hall,Kyoto Univ. Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT
Tomotaka Narita, Akio Wakejima, Takashi Egawa (NIT) ED2011-86 CPM2011-135 LQE2011-109
Transparent gate AlGaN/GaN HEMT(High Electron Mobility Transistor) on a Si substrate was fabricated. We estimated as cha... [more] ED2011-86 CPM2011-135 LQE2011-109
ED, MW 2008-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. CW 20-W AlGaN/GaN FET power amplifier for quasi-millimeter wave applications
Yasuhiro Murase, Akio Wakejima, Takashi Inoue, Katsumi Yamanoguchi, Masahiro Tanomura, Tatsuo Nakayama, Yasuhiro Okamoto, Kazuki Ota, Yuji Ando, Naotaka Kuroda, Kohji Matsunaga, Hironobu Miyamoto (FED) ED2007-212 MW2007-143
This paper describes an AlGaN/GaN FET power amplifier module delivering a continuous wave (CW) output power of more than... [more] ED2007-212 MW2007-143
MW, ED 2005-01-18
Tokyo   -
Akio Wakejima (NEC), -, -, Masahiro Funabashi (NTSpace), Kohji Matsunaga (NEC)
 [more] ED2004-225 MW2004-232
 Results 1 - 7 of 7  /   
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