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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-10-17
13:50		 Miyagi Niche, Tohoku Univ. Analysis of trap density causing random telegraph noise in MOSFETs
Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-93		 The incidence ratio of Random Telegraph Noise in 131,072 MOSFETs was evaluated statistically by using array test circuit... [more] SDM2014-93
pp.55-59
SDM 2013-10-18
14:00		 Miyagi Niche, Tohoku Univ. Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region
Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-98		 We extracted time constants of capture and emission of Random Telegraph Noise (RTN), and their dependencies of the gate-... [more] SDM2013-98
pp.51-56
SDM 2011-10-20
14:20		 Miyagi Tohoku Univ. (Niche) Reduction of Random Telegraph Noise with Broad Channel MOSFET
Hiroyoshi Suzuki, Rihito Kuroda, Akinobu Teramoto, Akihiro Yonezawa, Hiroaki Matsuoka, Taiki Nakazawa, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-98		 Drastic reduction of random telegraph noise (RTN) is demonstrated due to the broad channel MOSFET structure. We found th... [more] SDM2011-98
pp.5-9
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