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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, CPSY 2014-12-01
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. Consideration of SIMD Acceleration for a MIPS Instruction Processor -- A case study of processor design contest --
Kosuke Hiraishi, Akihiro Hashimoto, Kanemitsu Ootsu, Takeshi Ohkawa, Takashi Yokota (Utsunomiya Univ.) ICD2014-73 CPSY2014-85
In the system development using soft core processor on an FPGA (Field Programmable Gate Array), an access to external me... [more] ICD2014-73 CPSY2014-85
pp.1-6
CPM 2011-10-26
14:55
Fukui Fukui Univ. MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range
Toru Hotta, Kenichi Sugita, A. G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) CPM2011-113
MOVPE growth of InAlN and InGaN has been studied in order to develop basic technologies for InAlN/InGaN heterostructure ... [more] CPM2011-113
pp.23-26
CPM 2011-10-27
10:20
Fukui Fukui Univ. MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content
Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) CPM2011-120
This paper reports on the MOVPE growth of InxGa1-xN with x up to ~0.49 on AlN/Si(111) substrates. Single-crystalline Inx... [more] CPM2011-120
pp.55-58
CPM 2011-10-27
10:45
Fukui Fukui Univ. MOVPE growth of InN using NH3 decomposition catalyst
Dazio Hironaga, Kenichi Sugita, A.g. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ.of Fukui) CPM2011-121
In order to increase the NH3 decomposition rate in the MOVPE growth of InN, the employment of Pt catalyst has been propo... [more] CPM2011-121
pp.59-62
CPM, ED, LQE 2007-10-12
16:30
Fukui Fukui Univ. Atmospheric-pressure MOVPE growth of In-rich (1~0.5) InAlN
Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Fukui Univ.) ED2007-178 CPM2007-104 LQE2007-79
 [more] ED2007-178 CPM2007-104 LQE2007-79
pp.109-112
CPM 2006-11-10
10:15
Ishikawa Kanazawa Univ. Degradation of MOVPE InN during the growth
Kenichi Sugita, Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
 [more] CPM2006-125
pp.71-74
CPM 2005-11-12
09:00
Fukui   KOH etching effects of GaN buffer in MOVPE growth of InN on sapphire substrate
Yasuhiko Nagai, Hiroshi Miwa, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
The KOH etching effects of a GaN buffer in the MOVPE growth of InN on sapphire have been studied. With increasing etchin... [more] CPM2005-161
pp.1-4
CPM 2005-11-12
09:25
Fukui   Growth and Characterization of MOVPE InN Films on Bulk GaN Substrate
Wen-Jun Wang, Hiroshi Miwa, Yasuhiko Nagai, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
Single-crystalline In- and N-polarity InN films on bulk GaN substrate were successfully grown by MOVPE. The InN layers g... [more] CPM2005-162
pp.5-8
CPM 2005-11-12
09:50
Fukui   Photocatalytic H2S decomposition by InN1-xOx films grown by ArF laser-assisted MOCVD
Masayoshi Miyanishi (Univ. of Fukui), Naoya Takahashi (Fukui NCT), Takahiro Kobayashi (Univ. of Fukui), Katsumi Takayama (Fukui NCT), Yukio Nambo (Nicca), Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
An InN1-xOx, which is an alloy of InN with In2O3, is grown at a low (RT-500ºC) temperature by the ArF excimer laser... [more] CPM2005-163
pp.9-12
CPM 2005-11-12
10:15
Fukui   MOVPE growth of high-quality InN on 3c-SiC/Si template
Myung Soo Cho, Takahiro Kobayashi, Naoki Sawazaki, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center)
In this paper, We describe the comparison between MOVPE InN films grown on a 3c-SiC/Si(111) template formed by C+-ion im... [more] CPM2005-164
pp.13-16
CPM 2005-11-12
10:40
Fukui   MOVPE growth of GaN on 3c-SiC/Si template -- Nitridation effects of template surface --
Naoki Sawazaki, Takahiro Kobayashi, Myung Soo Cho, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center)
When a MOVPE GaN film is grown on a 3c-SiC/Si template formed by C+-ion implantation into Si, the surface of the grown f... [more] CPM2005-165
pp.17-20
LQE, ED, CPM 2005-10-13
09:50
Shiga Ritsumeikan Univ. NH3/TMI molar ratio dependence of electrical and optical properties for atmospheric-pressure MOVPE InN
Hiroshi Miwa, Yasuhiko Nagai, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
 [more] ED2005-119 CPM2005-106 LQE2005-46
pp.5-8
LQE, ED, CPM 2005-10-13
12:00
Shiga Ritsumeikan Univ. Mg doping of MOVPE InN using CP2Mg
Yasuhiko Nagai, Hiroshi Miwa, , Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
 [more] ED2005-125 CPM2005-112 LQE2005-52
pp.35-38
 Results 1 - 13 of 13  /   
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