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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2018-06-25 12:00 |
Aichi | Nagoya Univ. VBL3F | Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors Kazuya Yuge (SIT), Toshihide Nabatame, Yoshihiro Yoshikawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide (NIMS), Tomoji Ohishi (SIT)  SDM2018-19 |
In this study, the effects of the native oxide interfacial layer (Ga$_2$O$_3$) on the fixed charge and dipole formation ... [more] | SDM2018-19 pp.15-18 |
| SDM | 2017-10-26 10:50 |
Miyagi | Niche, Tohoku Univ. | Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2017-57 |
The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO... [more] | SDM2017-57 pp.39-44 |
| SDM | 2016-06-29 11:55 |
Tokyo | Campus Innovation Center Tokyo | Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) SDM2016-37 |
We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition... [more] | SDM2016-37 pp.27-32 |
| SDM | 2015-06-19 15:15 |
Aichi | VBL, Nagoya Univ. | Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51 |
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] | SDM2015-51 pp.69-73 |
| SDM | 2014-06-19 11:45 |
Aichi | VBL, Nagoya Univ. | Characteristics of charge trap flash memory with Al2O3/(Ta/Nb)Ox/Al2O3 multi-layer by ALD method Toshihide Nabatame, Akihiko Ohi (NIMS), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.), Toyohiro Chikyow (NIMS) SDM2014-49 |
We studied characteristics of the p-Si/SiO2/Al2O3-TL/(Ta/Nb)Ox-CTL/Al2O3-BL/Pt capacitors, fabricated by using ALD at 20... [more] | SDM2014-49 pp.31-35 |
| SDM | 2012-06-21 12:15 |
Aichi | VBL, Nagoya Univ. | Evaluation of Al atoms as a function of annealing temperature for (TaC)1-xAlx/HfO2 gate stack Masayuki Kimura (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi, Toshihiro Narushima, Toyohiro Chikyow (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.) |
Al-incorporated TaC ((TaC)1-xAlx) (x=0-0.33)) thin films were used as gate electrode to control Vfb for HfO2 MOS capacit... [more] | |
| SDM | 2011-07-04 15:00 |
Aichi | VBL, Nagoya Univ. | The effect of oxidation and reduction annealing on Vfb shift in ITO/HfO2 MOS capacitors Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.), Toyohiro Chikyow (NIMS) SDM2011-64 |
We investigated effect of oxidation and reduction annealing on Vfb for In0.9Sn0.1 (ITO)/HfO2 (4.9 nm)/SiO2 MOS capacitor... [more] | SDM2011-64 pp.81-85 |
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