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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-06-19
11:10		 Aichi VBL, Nagoya Univ. [Invited Lecture] Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC
Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric) SDM2015-42		 The chemical bonding states of Si and N at nitrided SiC/SiO2 interface were characterized by synchrotron radiation X-ray... [more] SDM2015-42
pp.21-26
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