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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| NLP, MICT, MBE, NC (Joint) [detail] |
2022-01-23 11:45 |
Online | Online | A Novel Quantitative AVF Measurement Method Using Non-Contact Imaging Rumi Iwai (Hyogo College of Medicine), Takunori Shimazaki, Yoshifumi Kawakubo (Jikei Univ.), Masanobu Tsurumoto (Bunri Univ.), Hiroyuki Hayashi, Masaharu Tamaki (Tamaki-Aozora Hospital.), Aki Otsuka (Sugi Hospital.), Kei Fukami (Kurume Univ.), Shingo Ata (Osaka City Univ.), Daisuke Anzai (Nagoya Tech Univ.)  NLP2021-125 MICT2021-100 MBE2021-86 |
Hemodialysis is a treatment where the blood is once sent out of the body and cleaned using a special filter called a dia... [more] | NLP2021-125 MICT2021-100 MBE2021-86 pp.254-259 |
| HPB (2nd) |
2020-08-29 13:05 |
Online | Online | A management system for injection molding machines Izumi Nakamura, Hiroaki Otsuka, Takuya Sano (NITTC), Tetsuro Maruta (Tycoh), Shinichiro Mito (NITTC) |
Injection molding factories, they produce a huge amount of products, have to monitor and record a production. A small to... [more] | |
| SDM, ED | 2009-02-26 16:05 |
Hokkaido | Hokkaido Univ. | Characteristics of Single Electron Transistor and Turnstile with Input Discretizer Masashi Takiguchi, Shota Hayami, Masaki Otsuka, Akio Kawai, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (The Univ of Electro-Communication) ED2008-229 SDM2008-221 |
In this report, we propose an input discretizer for single-electron devices. The input discretizer comprises one small t... [more] | ED2008-229 SDM2008-221 pp.29-34 |
| ICD | 2008-04-17 09:25 |
Tokyo | [Invited Talk]
A Single-Power-Supply 0.7V 1GHz 45nm SRAM with an Asymmetrical Unit β-ratio Memory Cell Takahiko Sasaki, Atsushi Kawasumi, Tomoaki Yabe, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida (Toshiba Corp.), Akihito Tohata (Toshiba Microelectronics Corp.), Akira Katayama, Gou Fukano, Yuki Fujimura, Nobuaki Otsuka (Toshiba Corp.) ICD2008-1 |
A single-power supply $64kB$ SRAM is fabricated in a $45nm$ bulk CMOS technology. The SRAM operates at $1GHz$ with a $0.... [more] | ICD2008-1 pp.1-6 |
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| ICD | 2008-04-17 11:15 |
Tokyo | [Invited Talk]
An 833MHz Pseudo Two-Port Embedded DRAM for Graphics Applications Mariko Kaku, Hitoshi Iwai, Takeshi Nagai, Masaharu Wada, Atsushi Suzuki, Tomohisa Takai, Naoko Itoga, Takayuki Miyazaki, Takayuki Iwai (Toshiba), Hiroyuki Takenaka (Toshiba Microelectronics), Takehiko Hojo, Shinji Miyano, Nobuaki Otsuka (Toshiba) ICD2008-3 |
This paper describes a pseudo two-port embedded DRAM macro developed for graphics applications. It introduces read/write... [more] | ICD2008-3 pp.13-18 |
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| ICD | 2008-04-18 10:00 |
Tokyo | A 65nm Pure CMOS One-time Programmable Memory Using a Two-Port Antifuse Cell Implemented in a Matrix Structure Kensuke Matsufuji, Toshimasa Namekawa, Hiroaki Nakano, Hiroshi Ito, Osamu Wada, Nobuaki Otsuka (Toshiba) ICD2008-8 |
A Pure CMOS One-time Programmable（PCOP）memory using an antifuse is presented. PCOP memory adopts two-port cell architect... [more] | ICD2008-8 pp.39-44 |
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| ICD, SDM | 2006-08-18 11:40 |
Hokkaido | Hokkaido University | Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm node and beyond Hirohisa Kawasaki (TAEC), Satoshi Inaba, Kimitoshi Okano, Akio Kaneko (Toshiba Semicon.), Atsushi Yagishita (TAEC), Takashi Izumida, Takahisa Kanemura, Takahiko Sasaki, Nobuaki Otsuka, Nobutoshi Aoki, Kyoichi Suguro, Kazuhiro Eguchi, Yoshitaka Tsunashima (Toshiba Semicon.), Kazunari Ishimaru (TAEC), Hidemi Ishiuchi (Toshiba Semicon.) |
[more] | SDM2006-147 ICD2006-101 pp.127-132 |
| SIP, ICD, IE, IPSJ-SLDM | 2005-10-20 15:50 |
Miyagi | Ichinobo, Sakunami-Spa | DFT Technique for Memory Macro with Built-in ECC Keiichi Kushida, Nobuaki Otsuka, Osamu Hirabayashi, Yasuhisa Takeyama (Toshiba Co.) |
DFT techniques to implement ECC circuitry on memory macro with no additional test cost are proposed. New methodology t... [more] |
SIP2005-111 ICD2005-130 IE2005-75 pp.95-100 |
| ICD, SDM | 2005-08-18 15:45 |
Hokkaido | HAKODATE KOKUSAI HOTEL | A Low Leakage SRAM Macro with Replica Cell Biasing Scheme Osamu Hirabayashi, Yasuhisa Takeyama, Hiroyuki Otake, Keiichi Kushida, Nobuaki Otsuka (Toshiba Corp.) |
(Advance abstract in Japanese is available) [more] | SDM2005-141 ICD2005-80 pp.79-84 |
| ICD, SDM | 2005-08-19 14:40 |
Hokkaido | HAKODATE KOKUSAI HOTEL | Robust Device Design in FinFET SRAM for hp22nm Technology Node Kimitoshi Okano, Tatsuya Ishida, Takahiko Sasaki, Takashi Izumida, Masaki Kondo, Makoto Fujiwara, Nobutoshi Aoki, Satoshi Inaba, Nobuaki Otsuka, Kazunari Ishimaru, Hidemi Ishiuchi (Toshiba) |
Feasibility of FinFET SRAM operation at hp22nm technology node has been studied by device and circuit simulation from th... [more] | SDM2005-154 ICD2005-93 pp.67-72 |
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