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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
EID, ITE-IDY, SID-JC [detail] 2015-07-30
16:10
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Switchable 2D/3D display for Adapting 3D Viewing Angle
Ayako Takagi, Shinichi Uehara, Masako Kashiwagi, Yuko Kizu, Masahiro Baba (Toshiba R&D center)
 [more]
AP, RCS
(Joint)
2011-11-18
09:40
Aichi Nagoya Congress Center The study of multiband autonomous impedance regulation antenna system with using a probe
Makoto Higaki, Shuichi Obayashi, Hiroki Shoki (Toshiba R&D Center) AP2011-114
 [more] AP2011-114
pp.141-144
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2010-11-30
11:05
Fukuoka Kyushu University [Invited Talk] A wafer-level system integration technology for heterogeneous devices with pseudo-SoC
Hiroshi Yamada, Yutaka Onozuka, Atsuko Iida, Kazuhiko Itaya, Hideyuki Funaki (Toshiba R&D Center) CPM2010-135 ICD2010-94
A wafer level system integration technology for heterogeneous devices has been developed by applying pseudo-SOC.
The ... [more]
CPM2010-135 ICD2010-94
pp.67-72
AP 2010-02-18
16:00
Tokyo Toshiba [Special Talk] TBD -- TBD --
Haruhiko Okumura (Toshiba)
 [more]
ITE-IDY, EID, ITE-HI, ITE-3DIT, LSJ, IEE-OQD 2009-10-08
16:00
Tokyo Kikai-Shinko-Kaikan Bldg. Image gamut expansion using the properties of brightness perception
Yoshie Imai, Toshimitsu Kaneko, Masahiro Baba, Goh Itoh (Toshiba) EID2009-26
Recently, the color gamut of display is becoming wider and wider while that of input image is still narrow. When the in... [more] EID2009-26
pp.33-36
ICD, SDM 2009-07-16
15:50
Tokyo Tokyo Institute of Technology The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation
Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) SDM2009-107 ICD2009-23
The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been ... [more] SDM2009-107 ICD2009-23
pp.53-56
ICD, SDM 2008-07-17
15:55
Tokyo Kikai-Shinko-Kaikan Bldg. Co-design of CNT based devices and circuitry -- How can CNT-based circuit overcome Si-CMOS? --
Shinobu Fujita (Toshiba RDC) SDM2008-138 ICD2008-48
Emerging devices using new materials (post-Si) are expected to replace Si-based MOSFET in future. This paper firstly cla... [more] SDM2008-138 ICD2008-48
pp.59-64
SDM 2008-03-14
13:05
Tokyo Kikai-Shinko-Kaikan Bldg. 15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers
Ryuji Ohba, Yuichiro Mitani, Naoharu Sugiyama, Shinobu Fujita (Toshiba) SDM2007-273
15nm gate length bulk-planar SONOS-type memory device, which has Si nanocrystal layer lying between double tunnel oxides... [more] SDM2007-273
pp.1-6
SDM 2006-06-22
10:55
Hiroshima Faculty Club, Hiroshima Univ. Realization of SiON films with small ΔVfb
Daisuke Matsushita, Koichi Muraoka, Yasushi Nakasaki, Koichi Kato, Shoko Kikuchi, Kiwamu Sakuma, Yuichiro Mitani (toshiba R&D center), Mariko Takayanagi, Kazuhiro Eguchi (Semiconductor Company)
 [more] SDM2006-56
pp.81-86
SR 2005-07-28
16:00
Kanagawa Yokosuka Research Park (Panel discussion)Key technologies and challenges for mobile SDR realization
Manabu Mukai (Toshiba R&D center)
 [more] SR2005-24
pp.31-38
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