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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2015-11-27 11:40 |
Osaka | Osaka City University Media Center | Dependence of the initial AlN layer of the vertical direction leakage current of the AlGaN/GaN HEMT structure on Silicon substrate Yuya Yamaoka (TNSC), Kazuhiro Ito (NITech), Akinori Ubukata, Toshiya Tabuchi, Koh Matsumoto (TNSC), Takashi Egawa (NITech)  ED2015-83 CPM2015-118 LQE2015-115 |
In this study, two types of single AlN on Si substrates were grown using different growth conditions. A scanning electro... [more] | ED2015-83 CPM2015-118 LQE2015-115 pp.77-80 |
| SDM | 2012-03-05 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Single-layered barrier/liner Co(W) by ALD/CVD for next generation ULSI-Cu interconnect Hideharu Shimizu (Taiyo Nippon Sanso/Tokyo Univ.), Kohei Shima, Takeshi Momose (Tokyo Univ.), Yoshihiko Kobayashi (Taiyo Nippon Sanso), Yukihiro Shimogaki (Tokyo Univ.) SDM2011-180 |
The effective resistivity of interconnects are predicted to be increased by ULSI shrinking. Barrier/liner layer formed o... [more] | SDM2011-180 pp.25-29 |
| ED, LQE, CPM | 2009-11-20 09:55 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | High rate growth of GaN using 4 inch x 11 multi wafer MOVPE reactor (UR25K) Yoshiki Yano, Kazutada Ikenaga, Hiroki Tokunaga (Taiyo Nippon Sanso), Jun Yamamoto (TN EMC), Toshiya Tabuchi (Taiyo Nippon Sanso), Kousuke Uchiyama (TN EMC), Akira Yamaguchi, Yasushi Fukuda, Akinori Ubukata (Taiyo Nippon Sanso), Yasuhiro Harada, Yuzaburo Ban, Koh Matsumoto (TN EMC), Toshiaki Yamazaki (Taiyo Nippon Sanso) ED2009-148 CPM2009-122 LQE2009-127 |
We have developed a multiwafer MOVPE reactor with a capacity of eleven 4 inch wafers(UR25K). In order to shorten the gro... [more] | ED2009-148 CPM2009-122 LQE2009-127 pp.95-98 |
| US | 2008-12-19 13:30 |
Kanagawa | Practical configuration and design of liquid level meter using the flexural vibrations in a rod Kentaro Nakamura, Daisuke Koyama, Sadayuki Ueha (Tokyo Tec), Kazumitsu Nukui (JAF), Kenzo Ikeda (Taiyo Nissan) US2008-67 |
Resonance frequency of a flexural vibrating rod is lowered by immersing the rod into fluid because of the mass effect of... [more] | US2008-67 pp.1-6 |
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| EA, US (Joint) |
2008-01-29 10:40 |
Osaka | Kansai University | Measuring method of the liquid level by the flexural vibration along a rod Daisuke Koyama, Kentaro Nakamura, Sadayuki Ueha, Hisanori Takahashi (Tokyo Tech.), Kazumitsu Nukui (Japan Applied Flow), Kenzo Ikeda (Taiyo Nippon Sanso Corp.) US2007-98 |
[more] | US2007-98 pp.11-16 |
| CPM, ED, LQE | 2007-10-11 15:20 |
Fukui | Fukui Univ. | Effects of trace moisture in NH3 gas on electro-luminescence intensity of InGaN LED
-- Moisture control in NH3 gas for MOVPE growth of LED structure -- Hirotaka Mangyou, Hiroyuki Ono, Yoshihiko Kobayashi, Koh Matsumoto, Kazunobu Shibuya (TAIYO NIPPON SANSO) ED2007-160 CPM2007-86 LQE2007-61 |
[more] | ED2007-160 CPM2007-86 LQE2007-61 pp.25-28 |
| SDM | 2007-10-05 11:20 |
Miyagi | Tohoku Univ. | Development of a high efficiency Fluorocarbon abatement system utilizing plasma and Ca(OH)2/CaO under a decompression atmosphere Katsumasa Suzuki, Yoshio Ishihara, Kaoru Sakoda (Taiyo Nippon Sanso Corp.), Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Tadahiro Ohmi (NICHe), Takayuki Watanabe (Ube Material Industries, Ltd.) SDM2007-184 |
[more] | SDM2007-184 pp.35-38 |
| LQE, ED, CPM | 2005-10-14 16:10 |
Shiga | Ritsumeikan Univ. | PL characterization of In surface segregation in InGaN/GaN Multiple Quantum Well Structures using MOCVD reactor (2” ×6 wafers) Kazutada Ikenaga, Akinori Ubukata, Akira Yamaguchi, Nakao Akutsu, Kinji Fujii, Koh Matsumoto (TAIYO NIPPON SANSO) |
[more] | ED2005-156 CPM2005-143 LQE2005-83 pp.81-84 |
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