Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ICD |
2011-08-26 09:00 |
Toyama |
Toyama kenminkaikan |
Evaluation of Variability in High-k/Metal-Gate MOSFET using Takeuchi Plot Tomoko Mizutani, Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-83 ICD2011-51 |
[more] |
SDM2011-83 ICD2011-51 pp.65-68 |
SDM, ICD |
2011-08-26 09:25 |
Toyama |
Toyama kenminkaikan |
Statistical Analysis of DIBL and Current-Onset Voltage (COV) Variability in Scaled MOSFETs Anil Kumar, Tomoko Mizutani (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-84 ICD2011-52 |
[more] |
SDM2011-84 ICD2011-52 pp.69-73 |
ICD, ITE-IST |
2011-07-22 10:25 |
Hiroshima |
Hiroshima Institute of Technology |
Analysis Methods of Substrate Sensitivity in an Analog Circiut Satoshi Takaya, Yoji Bando (Kobe Univ.), Toru Ohkawa, Masaaki Souda, Toshiharu Takaramoto, Toshio Yamada, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete), Makoto Nagata (Kobe Univ.) ICD2011-28 |
Substrate noise sensitivity of an analog circuit consists of the sensitivity of a device and noise propagation from the ... [more] |
ICD2011-28 pp.73-78 |
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2010-11-29 11:20 |
Fukuoka |
Kyushu University |
A Consideration of Substrate Noise Sensitivity of Analog Elements Satoshi Takaya, Yoji Bando, Takashi Hasegawa (Kobe Univ.), Toru Ohkawa, Masaaki Souda, Toshiharu Takaramoto, Toshio Yamada, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete), Makoto Nagata (Kobe Univ.) CPM2010-126 ICD2010-85 |
Measure substrate sensitivity of differential amplifiers in a 90 nm CMOS technology with more than 32 different geometor... [more] |
CPM2010-126 ICD2010-85 pp.13-17 |
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2010-11-29 14:10 |
Fukuoka |
Kyushu University |
[Invited Talk]
Present Status and Target Issue of LSI-Chip Optical Interconnection Keishi Ohashi (MIRAI-Selete/NEC), Tohru Mogami (MIRAI-Selete) CPM2010-129 ICD2010-88 |
On-chip optical interconnection is expected to give an answer to the problems on signal integrity and data band width. C... [more] |
CPM2010-129 ICD2010-88 pp.31-36 |
SDM |
2010-11-12 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Modeling of Single-Event-Transient Pulse Generation in Inverter Cells Katsuhiko Tanaka, Hideyuki Nakamura, Taiki Uemura, Kan Takeuchi, Toshikazu Fukuda, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete) SDM2010-180 |
Soft errors in logic circuits due to the propagation of erroneous signal caused by ionized particle generated by cosmic ... [more] |
SDM2010-180 pp.47-52 |
ICD, SDM |
2010-08-27 13:20 |
Hokkaido |
Sapporo Center for Gender Equality |
Direct Measurement and Analysis of Static Noise Margin in SRAM Cells Using DMA TEG Toshiro Hiramoto, Makoto Suzuki, Takuya Saraya, Ken Shimizu (Univ. of Tokyo), Akio Nishida, Shiro Kamohara, Kiyoshi Takeuchi, Tohru Mogami (MIRAI-Selete) SDM2010-144 ICD2010-59 |
[more] |
SDM2010-144 ICD2010-59 pp.111-114 |
ICD, SDM |
2010-08-27 16:00 |
Hokkaido |
Sapporo Center for Gender Equality |
Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65 |
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] |
SDM2010-150 ICD2010-65 pp.143-148 |
ICD, ITE-IST |
2010-07-22 10:20 |
Osaka |
Josho Gakuen Osaka Center |
In-situ Evaluation of Vth and AC Gain of 90 nm CMOS Differential Pair Transistors Yoji Bando, Satoshi Takaya, Takashi Hasegawa (Kobe Univ.), Toru Ohkawa, Masaaki Souda, Toshiharu Takaramoto, Toshio Yamada, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete), Makoto Nagata (Kobe Univ.) ICD2010-23 |
[more] |
ICD2010-23 pp.11-14 |
SDM |
2010-02-05 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Feasibility Study of 70nm Pitch Cu/Porous Low-k D/D Integration Featuring EUV Lithography toward 22nm Generation Naofumi Nakamura, Noriaki Oda, Eiichi Soda, Nobuki Hosoi, Akifumi Gawase, Hajime Aoyama, Y. Tanaka, D. Kawamura, S. Chikaki, M. Shiohara, Nobuaki Tarumi, S. Kondo, Ichiro Mori, S. Saito (SELETE) SDM2009-184 |
A feasibility study of 70 nm pitch 2-level dual damascene interconnects featuring EUV lithography is presented. Using Ru... [more] |
SDM2009-184 pp.13-18 |
SDM |
2009-11-12 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
2009 SISPAD Review Katsuhiko Tanaka (MIRAI-Selete) SDM2009-136 |
2009 International Conference on Simulation of Semiconductor Processes and Devices (2009 SISPAD) was held on September 9... [more] |
SDM2009-136 pp.7-11 |
SDM |
2009-11-13 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Random Fluctuations in Scaled MOS Devices Kiyoshi Takeuchi (MIRAI-Selete/NEC Corp.), Akio Nishida (MIRAI-Selete), Toshiro Hiramoto (MIRAI-Selete/Univ. of Tokyo.) SDM2009-147 |
[more] |
SDM2009-147 pp.67-71 |
SDM |
2009-11-13 15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation Hironori Sakamoto, Hiroshi Arimoto, Hiroo Masuda, Satoshi Funayama, Shigetaka Kumashiro (MIRAI-Selete) SDM2009-148 |
[more] |
SDM2009-148 pp.73-78 |
SDM |
2009-06-19 15:10 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] |
SDM2009-38 pp.67-70 |
OPE |
2008-12-19 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
[Invited]Trend of On-Chip Optical Interconeect Development Keishi Ohashi (NEC / MIRAI-Selete) OPE2008-140 |
Increases in the data transmission rate intra-chip and between chips have been kept under the increase in processor perf... [more] |
OPE2008-140 pp.23-24 |
SDM |
2008-12-05 13:15 |
Kyoto |
Kyoto University, Katsura Campus, A1-001 |
[Invited Talk]
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) SDM2008-188 |
[more] |
SDM2008-188 pp.21-25 |
LQE, CPM, EMD, OPE |
2008-08-28 11:25 |
Miyagi |
Touhoku Univ. |
Optical Device Application of EO/MO Materials by Aerosol Deposition Masafumi Nakada (NEC Corp./MIRAI-Selete), Takanori Shimizu (MIRAI-Selete), Mizuki Iwanami (NEC Corp.), Keishi Ohashi (NEC Corp./MIRAI-Selete), Hiroki Tsuda, Jun Akedo (AIST) EMD2008-34 CPM2008-49 OPE2008-64 LQE2008-33 |
We develop functional oxide films with a large electro-optic (EO) effect for use in very small, low-power EO conversion ... [more] |
EMD2008-34 CPM2008-49 OPE2008-64 LQE2008-33 pp.11-14 |
ICD, SDM |
2008-07-17 09:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations Motoyuki Sato, Yoshihiro Sugita, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete) SDM2008-128 ICD2008-38 |
Using (110) substarate is one of promissing candidate for pMOSTET boost technology. (110) surface shows not only higher ... [more] |
SDM2008-128 ICD2008-38 pp.1-6 |
ICD, SDM |
2008-07-17 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Special Talk]
Present Status and Future Trend of Characteristic Variations in Scaled CMOS Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) SDM2008-135 ICD2008-45 |
The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variabi... [more] |
SDM2008-135 ICD2008-45 pp.41-46 |
ICD, SDM |
2008-07-18 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Fabrication of Ultra Shallow Junction and Improvement of Metal Gate High-k CMOS Performance by FSP-FLA (Flexibly-Shaped-Pulse Flash-Lamp-Annealing) Technology Takashi Onizawa, Shinichi Kato, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (selete) SDM2008-146 ICD2008-56 |
We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ... [more] |
SDM2008-146 ICD2008-56 pp.103-108 |