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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 29  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD 2011-08-26
09:00
Toyama Toyama kenminkaikan Evaluation of Variability in High-k/Metal-Gate MOSFET using Takeuchi Plot
Tomoko Mizutani, Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-83 ICD2011-51
 [more] SDM2011-83 ICD2011-51
pp.65-68
SDM, ICD 2011-08-26
09:25
Toyama Toyama kenminkaikan Statistical Analysis of DIBL and Current-Onset Voltage (COV) Variability in Scaled MOSFETs
Anil Kumar, Tomoko Mizutani (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2011-84 ICD2011-52
 [more] SDM2011-84 ICD2011-52
pp.69-73
ICD, ITE-IST 2011-07-22
10:25
Hiroshima Hiroshima Institute of Technology Analysis Methods of Substrate Sensitivity in an Analog Circiut
Satoshi Takaya, Yoji Bando (Kobe Univ.), Toru Ohkawa, Masaaki Souda, Toshiharu Takaramoto, Toshio Yamada, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete), Makoto Nagata (Kobe Univ.) ICD2011-28
Substrate noise sensitivity of an analog circuit consists of the sensitivity of a device and noise propagation from the ... [more] ICD2011-28
pp.73-78
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2010-11-29
11:20
Fukuoka Kyushu University A Consideration of Substrate Noise Sensitivity of Analog Elements
Satoshi Takaya, Yoji Bando, Takashi Hasegawa (Kobe Univ.), Toru Ohkawa, Masaaki Souda, Toshiharu Takaramoto, Toshio Yamada, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete), Makoto Nagata (Kobe Univ.) CPM2010-126 ICD2010-85
Measure substrate sensitivity of differential amplifiers in a 90 nm CMOS technology with more than 32 different geometor... [more] CPM2010-126 ICD2010-85
pp.13-17
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2010-11-29
14:10
Fukuoka Kyushu University [Invited Talk] Present Status and Target Issue of LSI-Chip Optical Interconnection
Keishi Ohashi (MIRAI-Selete/NEC), Tohru Mogami (MIRAI-Selete) CPM2010-129 ICD2010-88
On-chip optical interconnection is expected to give an answer to the problems on signal integrity and data band width. C... [more] CPM2010-129 ICD2010-88
pp.31-36
SDM 2010-11-12
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. Modeling of Single-Event-Transient Pulse Generation in Inverter Cells
Katsuhiko Tanaka, Hideyuki Nakamura, Taiki Uemura, Kan Takeuchi, Toshikazu Fukuda, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete) SDM2010-180
Soft errors in logic circuits due to the propagation of erroneous signal caused by ionized particle generated by cosmic ... [more] SDM2010-180
pp.47-52
ICD, SDM 2010-08-27
13:20
Hokkaido Sapporo Center for Gender Equality Direct Measurement and Analysis of Static Noise Margin in SRAM Cells Using DMA TEG
Toshiro Hiramoto, Makoto Suzuki, Takuya Saraya, Ken Shimizu (Univ. of Tokyo), Akio Nishida, Shiro Kamohara, Kiyoshi Takeuchi, Tohru Mogami (MIRAI-Selete) SDM2010-144 ICD2010-59
 [more] SDM2010-144 ICD2010-59
pp.111-114
ICD, SDM 2010-08-27
16:00
Hokkaido Sapporo Center for Gender Equality Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete) SDM2010-150 ICD2010-65
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] SDM2010-150 ICD2010-65
pp.143-148
ICD, ITE-IST 2010-07-22
10:20
Osaka Josho Gakuen Osaka Center In-situ Evaluation of Vth and AC Gain of 90 nm CMOS Differential Pair Transistors
Yoji Bando, Satoshi Takaya, Takashi Hasegawa (Kobe Univ.), Toru Ohkawa, Masaaki Souda, Toshiharu Takaramoto, Toshio Yamada, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete), Makoto Nagata (Kobe Univ.) ICD2010-23
 [more] ICD2010-23
pp.11-14
SDM 2010-02-05
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. Feasibility Study of 70nm Pitch Cu/Porous Low-k D/D Integration Featuring EUV Lithography toward 22nm Generation
Naofumi Nakamura, Noriaki Oda, Eiichi Soda, Nobuki Hosoi, Akifumi Gawase, Hajime Aoyama, Y. Tanaka, D. Kawamura, S. Chikaki, M. Shiohara, Nobuaki Tarumi, S. Kondo, Ichiro Mori, S. Saito (SELETE) SDM2009-184
A feasibility study of 70 nm pitch 2-level dual damascene interconnects featuring EUV lithography is presented. Using Ru... [more] SDM2009-184
pp.13-18
SDM 2009-11-12
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] 2009 SISPAD Review
Katsuhiko Tanaka (MIRAI-Selete) SDM2009-136
2009 International Conference on Simulation of Semiconductor Processes and Devices (2009 SISPAD) was held on September 9... [more] SDM2009-136
pp.7-11
SDM 2009-11-13
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Random Fluctuations in Scaled MOS Devices
Kiyoshi Takeuchi (MIRAI-Selete/NEC Corp.), Akio Nishida (MIRAI-Selete), Toshiro Hiramoto (MIRAI-Selete/Univ. of Tokyo.) SDM2009-147
 [more] SDM2009-147
pp.67-71
SDM 2009-11-13
15:00
Tokyo Kikai-Shinko-Kaikan Bldg. A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation
Hironori Sakamoto, Hiroshi Arimoto, Hiroo Masuda, Satoshi Funayama, Shigetaka Kumashiro (MIRAI-Selete) SDM2009-148
 [more] SDM2009-148
pp.73-78
SDM 2009-06-19
15:10
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics
Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] SDM2009-38
pp.67-70
OPE 2008-12-19
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] [Invited]Trend of On-Chip Optical Interconeect Development
Keishi Ohashi (NEC / MIRAI-Selete) OPE2008-140
Increases in the data transmission rate intra-chip and between chips have been kept under the increase in processor perf... [more] OPE2008-140
pp.23-24
SDM 2008-12-05
13:15
Kyoto Kyoto University, Katsura Campus, A1-001 [Invited Talk] Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks
Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) SDM2008-188
 [more] SDM2008-188
pp.21-25
LQE, CPM, EMD, OPE 2008-08-28
11:25
Miyagi Touhoku Univ. Optical Device Application of EO/MO Materials by Aerosol Deposition
Masafumi Nakada (NEC Corp./MIRAI-Selete), Takanori Shimizu (MIRAI-Selete), Mizuki Iwanami (NEC Corp.), Keishi Ohashi (NEC Corp./MIRAI-Selete), Hiroki Tsuda, Jun Akedo (AIST) EMD2008-34 CPM2008-49 OPE2008-64 LQE2008-33
We develop functional oxide films with a large electro-optic (EO) effect for use in very small, low-power EO conversion ... [more] EMD2008-34 CPM2008-49 OPE2008-64 LQE2008-33
pp.11-14
ICD, SDM 2008-07-17
09:00
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations
Motoyuki Sato, Yoshihiro Sugita, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete) SDM2008-128 ICD2008-38
Using (110) substarate is one of promissing candidate for pMOSTET boost technology. (110) surface shows not only higher ... [more] SDM2008-128 ICD2008-38
pp.1-6
ICD, SDM 2008-07-17
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Special Talk] Present Status and Future Trend of Characteristic Variations in Scaled CMOS
Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) SDM2008-135 ICD2008-45
The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variabi... [more] SDM2008-135 ICD2008-45
pp.41-46
ICD, SDM 2008-07-18
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication of Ultra Shallow Junction and Improvement of Metal Gate High-k CMOS Performance by FSP-FLA (Flexibly-Shaped-Pulse Flash-Lamp-Annealing) Technology
Takashi Onizawa, Shinichi Kato, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (selete) SDM2008-146 ICD2008-56
We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ... [more] SDM2008-146 ICD2008-56
pp.103-108
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