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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2009-04-14
13:50
Miyagi Daikanso (Matsushima, Miyagi) A 7.8MB/s 64Gb 4bit/Cell NAND Flash Memory in 43nm CMOS
Mitsuaki Honma (Toshiba Corp.), Cuong Trinh (SanDisk Corp.), Noboru Shibata, Takeshi Nakai, Mikio Ogawa, Junpei Sato, Yoshikazu Takeyama, Katsuaki Isobe (Toshiba Corp.), Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei (SanDisk Corp.), Kiyoaki Iwasa (Toshiba Corp.) ICD2009-9
A 4bit/cell with 43nm CMOS technology NAND flash memory is realized.
64Gb/die is largest capacity.
To achieve 16 leve... [more]
ICD2009-9
pp.43-46
ICD 2008-04-17
13:55
Tokyo   A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
Dai Nakamura, Kazushige Kanda, Masaru Koyanagi, Toshio Yamamura, Koji Hosono, Masahiro Yoshihara (Toshiba), Toru Miwa, Yosuke Kato (Sandisk), Alex Mak, Siu Lung Chan, Frank Tsai, Raul Cernea, Binh Le (Sandisk Corp.), Eiichi Makino, Takashi Taira (Toshiba) ICD2008-5
A 120mm2 16Gb MLC NAND flash memory is developed using 43nm CMOS. The area is reduced by more than 9% by applying a 66 N... [more] ICD2008-5
pp.25-30
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