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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
OME, SDM |
2009-04-24 16:40 |
Saga |
AIST Kyushu-center |
Crystallization and annealing of heavily doped p-type Si film and electronic properties Takashi Noguchi, Tomoyuki Miyahira (Univ. of the Ryukyus), Toshiharu Suzuki (SEN) SDM2009-6 OME2009-6 |
[more] |
SDM2009-6 OME2009-6 pp.25-28 |
SDM, ED |
2008-07-09 13:45 |
Hokkaido |
Kaderu2・7 |
[Invited Talk]
Precise Ion Implantation for Advanced MOS LSIs Toshiharu Suzuki (SEN) ED2008-44 SDM2008-63 |
Issues in the ion implantation technology employed in advanced MOSLSIs are addressed, where the placement of implanted i... [more] |
ED2008-44 SDM2008-63 pp.25-30 |
SDM, OME |
2008-04-11 10:35 |
Okinawa |
Okinawa Seinen Kaikan |
Electrical activation of heavily doped Si film by crystallization annealing Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN) SDM2008-4 OME2008-4 |
After UV pulsed excimer laser annealing for highly
boron-, or phosphorus dosed Si film, the relationship
between the c... [more] |
SDM2008-4 OME2008-4 pp.17-22 |
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