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Committee Date Time Place Paper Title / Authors Abstract Paper #
OME, SDM 2009-04-24
16:40
Saga AIST Kyushu-center Crystallization and annealing of heavily doped p-type Si film and electronic properties
Takashi Noguchi, Tomoyuki Miyahira (Univ. of the Ryukyus), Toshiharu Suzuki (SEN) SDM2009-6 OME2009-6
 [more] SDM2009-6 OME2009-6
pp.25-28
SDM, ED 2008-07-09
13:45
Hokkaido Kaderu2・7 [Invited Talk] Precise Ion Implantation for Advanced MOS LSIs
Toshiharu Suzuki (SEN) ED2008-44 SDM2008-63
Issues in the ion implantation technology employed in advanced MOSLSIs are addressed, where the placement of implanted i... [more] ED2008-44 SDM2008-63
pp.25-30
SDM, OME 2008-04-11
10:35
Okinawa Okinawa Seinen Kaikan Electrical activation of heavily doped Si film by crystallization annealing
Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN) SDM2008-4 OME2008-4
After UV pulsed excimer laser annealing for highly
boron-, or phosphorus dosed Si film, the relationship
between the c... [more]
SDM2008-4 OME2008-4
pp.17-22
 Results 1 - 3 of 3  /   
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