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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2021-11-25
14:35		 Online Online Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy
Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT) ED2021-22 CPM2021-56 LQE2021-34		 The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons ... [more] ED2021-22 CPM2021-56 LQE2021-34
pp.37-40
ED, CPM, LQE 2021-11-26
13:25		 Online Online Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy
Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) ED2021-29 CPM2021-63 LQE2021-41		 Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning inter... [more] ED2021-29 CPM2021-63 LQE2021-41
pp.67-70
ED, CPM, LQE 2021-11-26
16:00		 Online Online Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching
Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.) ED2021-34 CPM2021-68 LQE2021-46		 (To be available after the conference date) [more] ED2021-34 CPM2021-68 LQE2021-46
pp.87-90
LQE, CPM, ED 2020-11-26
14:10		 Online Online Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy -- Comparison between n- and p-type GaN samples --
Ryo Matsuda (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Noboru Fukuhara (SCIOCS), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2020-9 CPM2020-30 LQE2020-60		  [more] ED2020-9 CPM2020-30 LQE2020-60
pp.33-36
ED, MW 2020-01-31
11:45		 Tokyo Kikai-Shinko-Kaikan Bldg. Simple Photoelectrochemical Etching for Recess Gate GaN HEMT
Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.) ED2019-98 MW2019-132		 Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] ED2019-98 MW2019-132
pp.25-28
ED, CPM, SDM 2018-05-24
15:25		 Aichi Toyohashi Univ. of Tech. (VBL) The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR
Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) ED2018-18 CPM2018-5 SDM2018-13		 The film thickness of homo epitaxial layers on freestanding GaN substrate was characterized by using Fourier transform ... [more] ED2018-18 CPM2018-5 SDM2018-13
pp.19-22
LQE, CPM, ED 2017-11-30
16:15		 Aichi Nagoya Inst. tech. Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy
Kenji Shiojima, Takanori Hashizume (Univ. of Fukui), Masafumi Horikiri, Takeshi Tanaka (SCIOCS), Tomoyoshi Mishima (Hosei Univ.) ED2017-55 CPM2017-98 LQE2017-68		 We characterized the effect of the surface morphology on electrical properties of the n-GaN drift-layers by using scanni... [more] ED2017-55 CPM2017-98 LQE2017-68
pp.27-32
MW, ED 2017-01-26
15:50		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Current status and problems of epitaxial wafers for GaN electronic devices
Yohei Otoki (SCIOCS) ED2016-100 MW2016-176		 GaN electronic devices have been in the practical stage mainly for high frequency applications. In epitaxial growth, the... [more] ED2016-100 MW2016-176
pp.19-22
 Results 1 - 8 of 8  /   
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