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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz 2021-12-20
13:40		 Miyagi
(Primary: On-site, Secondary: Online)		 [Invited Talk] Low-Noise Terahertz Wave Detection by Fermi-Level Managed Barrier Diode
Hiroshi Ito (Kitasato Univ.), Tadao Ishibashi (NEL Techno) ED2021-49		 A broadband and low-noise THz-wave detector called Fermi-level managed barrier (FMB) diode was developed. The fabricated... [more] ED2021-49
pp.6-9
R, LQE, OPE, CPM, EMD 2020-08-28
16:35		 Online Online [Invited Talk] Novel Terahertz-Wave Detector: Fermi-Level Managed Barrier Diode
Hiroshi Ito (Kitasato Univ.), Tadao Ishibashi (NEL Techno) R2020-18 EMD2020-17 CPM2020-10 OPE2020-30 LQE2020-10		 A hetero-barrier rectifier, Fermi-level managed barrier (FMB) diode, was developed for broadband and low-noise THz-wave ... [more] R2020-18 EMD2020-17 CPM2020-10 OPE2020-30 LQE2020-10
pp.43-46
LQE 2018-02-23
09:35		 Kanagawa   [Special Invited Talk] Ultrafast Carrier Transport in a Photodiode Structure
Tadao Ishibashi (NEL-T) LQE2017-151		 Photodiode response behaves variously being associated with nonequilibrium transport of photogenerated carriers. Observe... [more] LQE2017-151
pp.1-6
OPE 2017-12-08
11:55		 Okinawa   600-GHz Coherent Terahertz Wave Combiner
Yang Zhou, Goki Sakano, Yusuke Yamanaka (Kyushu Univ.), Hiroshi Ito (Kitasato Univ.), Tadao Ishibashi (NEL Techno), Kazutoshi Kato (Kyushu Univ.) OPE2017-115		 For future high-speed wireless communication, the terahertz-wave transmission is attracting an attention. However, compa... [more] OPE2017-115
pp.131-134
ED 2016-12-19
16:30		 Miyagi RIEC, Tohoku Univ Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration
Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiromasa Ito, Hiroaki Minamide (RIKEN), Tadao Ishibashi (NTT Electronics Techno), Makoto Shimizu (NEL), Akira Satou (Tohoku Univ.) ED2016-84		 Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for room-temperature operating... [more] ED2016-84
pp.23-28
 Results 1 - 5 of 5  /   
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