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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 32  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
DC 2010-02-15
09:00
Tokyo Kikai-Shinko-Kaikan Bldg. A Statistical Method of Small Iddq Variance Outlier Detection
Yoshiyuki Nakamura, Masashi Tanaka (NEC Electronics) DC2009-65
With manufacturing process advances, Iddq test becomes difficult due to its variance. Though ?Iddq or various methods we... [more] DC2009-65
pp.1-5
SDM 2010-02-05
10:50
Tokyo Kikai-Shinko-Kaikan Bldg. Highly-Reliable Cu Interconnect covered with CoWB Metal-cap in a Waterproof Molecular-Pore-Stack (MPS)-SiOCH film
Yoshihiro Hayashi, Masayoshi Tagami, Naoya Furutake, Naoya Inoue, Emiko Nakazawa, Kouji Arita (NEC Electronics) SDM2009-183
A new low-power copper (Cu) interconnect structure is developed with selective-metal (CoWB) cap, which selectively cover... [more] SDM2009-183
pp.7-11
SDM 2010-02-05
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. Optimization of Metallization Processes for 32-nm node Highly Reliable Ultralow-k (k=2.4)/Cu Multilevel Interconnects Incorporating a Bilayer Low-k Barrier Cap (k=3.9)
M. Iguchi, S. Yokogawa, Hirokazu Aizawa, Y. Kakuhara, Hideaki Tsuchiya, Norio Okada, Kiyotaka Imai, M. Tohara, K. Fujii (NEC Electronics), T. Watanabe (Toshiba) SDM2009-186
Reliability of 32-nm-node ultralow-k (k=2.4)/Cu multilevel interconnects incorporating a bilayer low-k barrier cap (k=3.... [more] SDM2009-186
pp.25-29
SDM 2010-02-05
15:15
Tokyo Kikai-Shinko-Kaikan Bldg. Chip-Level and Package-Level Seamless Interconnect Technologies for Advanced Packaging
Shintaro Yamamichi, Kentaro Mori, Katsumi Kikuchi, Hideya Murai, D. Ohshima, Y. Nakashima (NEC), Kouji Soejima, Masaya Kawano (NEC Electronics), Tomoo Murakami (NEC) SDM2009-189
Interposer-process-oriented thick-Cu-wiring technologies have been developed. Cu wiring thickness is 5 to 10 um, and int... [more] SDM2009-189
pp.43-48
SDM 2009-11-13
10:50
Tokyo Kikai-Shinko-Kaikan Bldg. Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation
Hiroshi Takeda (NEC Electronics Corp.), Michihito Kawada (NEC Informatec Systems), Kiyoshi Takeuchi, Masami Hane (NEC Electronics Corp.) SDM2009-144
Transport characteristics of strained-SiGe on Si channel pMOSFETs is analyzed in detail by full-band device simulation. ... [more] SDM2009-144
pp.49-53
SDM 2009-11-13
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Random Fluctuations in Scaled MOS Devices
Kiyoshi Takeuchi (MIRAI-Selete/NEC Corp.), Akio Nishida (MIRAI-Selete), Toshiro Hiramoto (MIRAI-Selete/Univ. of Tokyo.) SDM2009-147
 [more] SDM2009-147
pp.67-71
ICD, ITE-IST 2009-10-02
12:40
Tokyo CIC Tokyo (Tamachi) A Self-Background Calibrated 6b 2.7GS/s ADC with Cascade-Calibrated Folding-Interpolating Architecture
Yuji Nakajima (NEC Electronics), Akemi Sakaguchi, Toshio Ohkido (NEC Micro Systems), Tetsuya Matsumoto, Michio Yotsuyanagi (NEC Electronics) ICD2009-53
We have developed a 6b 2.7GS/s Folding ADC with on-chip self-background calibration in 90nm CMOS. This is the first repo... [more] ICD2009-53
pp.111-116
MW 2009-09-25
13:50
Tokyo Univ. of Electro-Communications A Low-Power, Small Area Quadrature LC-VCO using miniature 3D Solenoid shaped Inductor
Akira Tanabe, Ken'ichiro Hijioka, Hirokazu Nagase, Yoshihiro Hayashi (NEC Electronics Corp.) MW2009-83
An extra small area, low-power 5GHz Quadrature LC-VCO and PLL have been fabricated using 3 dimensional (3D) solenoid sha... [more] MW2009-83
pp.55-60
MW 2009-09-25
17:15
Tokyo Univ. of Electro-Communications [Special Talk] Anlysis and Design of a Dynamic Predistorter for WCDMA Handsets Power Amplifier
Shingo Yamanouchi, Yuuichi Aoki, Kazuaki Kunihiro (NEC), Tomohisa Hirayama (NEC Electronics Corp.), Takashi Miyazaki (NEC), Hikaru Hida (NEC Electronics Corp.) MW2009-90
This paper presents a dynamic predistorter (PD), which linearizes dynamic AM-AM and AM-PM of a wide-band CDMA (WCDMA) ha... [more] MW2009-90
pp.93-98
WBS 2009-07-24
14:40
Shizuoka Shizuoka Univ. Basic Characteristics and Propagation Experiments in Aggregated Conditions for the High Band UWB Equipment
Takushi Mochizuki (NEC Electronics), Huan-Bang Li (NICT), Hikaru Hirotani (Hitachi Kokusai) WBS2009-20
From the experimental study of the High Band Experiment Task Group in the Council 2008 on Ultra Wideband Wireless Techno... [more] WBS2009-20
pp.75-80
ICD, SDM 2009-07-17
14:10
Tokyo Tokyo Institute of Technology Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM
Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima (NEC Corp.), Yasuaki Ozaki (NECEL Corp.), Shinsaku Saito, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Kaoru Mori, Chuji Igarashi, Sadahiko Miura, Nobuyuki Ishiwata, Tadahiko Sugibayashi (NEC Corp.) SDM2009-114 ICD2009-30
We have developed a new magnetic random access memory with current-induced domain wall motion (DW-motion MRAM) using per... [more] SDM2009-114 ICD2009-30
pp.91-95
DC 2009-06-19
15:10
Tokyo Kikai-Shinko-Kaikan Bldg. *
Koichiro Noguchi, Koichi Nose (NEC Corp.), Toshinobu Ono (NEC Electronics Corp.), Masayuki Mizuno (NEC Corp.) DC2009-16
 [more] DC2009-16
pp.31-34
ICD 2009-04-13
14:30
Miyagi Daikanso (Matsushima, Miyagi) [Invited Talk] MRAM technology trend and evolution, 32Mb MRAM development
Tadahiko Sugibayashi, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Shinsaku Saito (NEC), Yuichi Ito (NECEL), Sadahiko Miura, Yuko Kato, Kaoru Mori (NEC), Yasuaki Ozaki, Yosuke Kobayashi (NECEL), Norikazu Ohshima, Keizo Kinoshita, Tetsuhiro Suzuki, Kiyokazu Nagahara (NEC) ICD2009-3
 [more] ICD2009-3
pp.13-17
ICD 2008-12-12
13:20
Tokyo Tokyo Inst. Tech., Ohokayama Campus, Kokusa-Kouryu-Kaikan Fast Voltage Control Scheme with Adaptive Voltage Control Steps and Temporary Reference Voltage Overshoots for Dynamic Voltage and Frequency Scaling
Yoshifumi Ikenaga, Masahiro Nomura (NEC Electronics), Yoetsu Nakazawa (NEC Corporation), Yoshihiro Hayashi (NEC Electronics) ICD2008-121
 [more] ICD2008-121
pp.95-100
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2008-11-19
11:15
Fukuoka Kitakyushu Science and Research Park An On-Chip Decoupling Capacitance Budgeting Methodology by Using Power-Capacitance Ratio
Susumu Kobayashi, Naoshi Doi (NEC Electronics Corp.) CPM2008-95 ICD2008-94
The high-speed and low-power system LSIs in recent years have crucial need for managing power supply noise so that it mi... [more] CPM2008-95 ICD2008-94
pp.37-42
ICD, ITE-IST 2008-10-22
14:45
Hokkaido Hokkaido University A Linearity Improvement Technique for Cyclic D/A Converters
Wataru Saito, Hidenao Kobayashi, Tetsuya Matsumoto, Michio Yotsuyanagi (NEC Electronics) ICD2008-62
This paper presents a calibration technique suitable for Cyclic D/A Converters (DAC) which improves Differential Non Lin... [more] ICD2008-62
pp.19-24
ICD, ITE-IST 2008-10-24
08:30
Hokkaido Hokkaido University An Optimization Design of Temperature Sensor Including Device Fluctuation
Hideyuki Tajima, Tetsuhiro Koyama, Motoi Yamaguchi, Masaaki Souda, Michio Yotsuyanagi (NEC Electronics) ICD2008-78
 [more] ICD2008-78
pp.113-118
ICD, SDM 2008-07-17
09:50
Tokyo Kikai-Shinko-Kaikan Bldg. Reduction of Vth Variation Utilizing HfSiOx for 45nm SRAM
Gen Tsutsui, Kazuaki Tsunoda, Nayuta Kariya, Yutaka Akiyama, Tomohisa Abe, Shinya Maruyama, Tadashi Fukase, Mieko Suzuki, Yasushi Yamagata, Kiyotaka Imai (NECEL) SDM2008-130 ICD2008-40
 [more] SDM2008-130 ICD2008-40
pp.11-16
SIS 2008-06-12
16:10
Hokkaido   [Invited Talk] Human resouces development measures for engineers
Masaki Hirata (NEC Electronics) SIS2008-13
(To be available after the conference date) [more] SIS2008-13
pp.71-72
ICD 2008-04-17
13:05
Tokyo   [Invited Talk] Embedded DRAM Technology for Consumer Electronics
Hiroki Shirai, Ryousuke Ishikawa, Yuichi Itoh, Takuya Kitamura, Mami Takeuchi, Takashi Sakoh, Ken Inoue, Tohru Kawasaki, Nobuyuki Katsuki, Hiroyuki Hoshizaki, Shinichi Kuwabara, Hidetaka Natsume, Masato Sakao, Takaho Tanigawa (NEC Electronics) ICD2008-4
This paper presents embedded DRAM device technology utilizing stacked MIM(Metal-Insulator-Metal) capacitor. Targeted for... [more] ICD2008-4
pp.19-24
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