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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2008-06-13
14:15
Ishikawa Kanazawa University Characterization of N-doped AlSiO film for wide bandgap semiconductors
Naoyoshi Komatsu, Hirotaka Tanaka, Hidemitsu Aoki, Keiko Matsunouchi, Chiharu Kimura (Osaka Univ.), Yukihiko Okumura (Maizuru National Col. of Tech.), Takashi Sugino (Osaka Univ.) ED2008-25
A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high power field effect ... [more] ED2008-25
pp.17-22
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