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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 63  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, DC, RECONF, ICD, IPSJ-SLDM
(Joint) [detail]
2020-11-17
14:50
Online Online VLD2020-18 ICD2020-38 DC2020-38 RECONF2020-37  [more] VLD2020-18 ICD2020-38 DC2020-38 RECONF2020-37
pp.42-47
ED 2019-11-22
09:25
Tokyo   Evaluation of Gamma-ray Induced Current Generated on Cables Transferring Sensor Output under Radiation Fields
Yasuhito Gotoh (Kyoto Univ.), Yasuki Okuno (JAEA), Nobuhiro Sato (Kyoto Univ.), Masafumi Akiyoshi (Osaka Pref. Univ.), Mitsuru Imaizumi (JAXA), Tomohiro Kobayashi (RIKEN), Tamotsu Okamoto (NIT, Kisarazu Coll.) ED2019-69
 [more] ED2019-69
pp.39-42
MRIS, ITE-MMS, IEE-MAG 2019-10-17
16:45
Fukuoka Kyushu University (Nishijin Plaza) Magnetic structure analysis in [Fe3Si/FeSi2]20 superlattice using polarized neutron reflectivity
Takayasu Hanashima, Jun-ichi Suzuki, Kazuhisa Kakurai, Noboru Miyata (CROSS), Masayasu Takeda (JAEA), Satoshi Takeichi, Tsuyoshi Yoshitake (Kyushu Univ.), Ken-ichiro Sakai (Kurume NCT), Hiroyuki Deguchi (Kyushu Inst. Tech.) MRIS2019-24
 [more] MRIS2019-24
pp.57-60
SDM 2018-06-25
11:40
Aichi Nagoya Univ. VBL3F Control of SiO2/GaN Interface for High-performance GaN MOSFET
Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18
A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] SDM2018-18
pp.11-14
MRIS, ITE-MMS 2018-06-07
16:35
Miyagi Tohoku Univ. Exchange bias using antiferromagnetic Heusler alloy films
Takahide Kubota, Tomoki Tsuchiya, Keita Ito, Tomoko Sugiyama (Tohoku Univ.), Yukiharu Takeda, Yuji Saitoh (JAEA), Akio Kimura (Hiroshima Univ.), Koki Takanashi (Tohoku Univ.) MRIS2018-8
 [more] MRIS2018-8
pp.43-47
QIT
(2nd)
2017-11-17
14:40
Saitama Saitama University Mechanical generation of spin and spin current
Mamoru Matsuo (Tohoku Univ.), Yuichi Ohnuma, Sadamichi Maekawa (JAEA)
We review the interconversion phenomena between spin and mechanical angular momentum in moving objects. In particular, t... [more]
IE, ITE-ME, ITE-AIT [detail] 2017-10-05
13:50
Nagasaki   Estimation of Facets of a Point Cloud Obtained from a Gallery Wall Using Multi-Dimensional Particle Swarm Optimization
Yuto Matsuura, Shun Matsukawa, Ken-ichi Itakura (Muroran-IT), Akira Hayano (JAEA), Yukinori Suzuki (Muroran-IT) IE2017-49
It is necessary to identify discontinuities of a gallery wall to evaluate the stability of the gallery structure. A poin... [more] IE2017-49
pp.13-18
EMCJ 2016-11-25
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. A Study of a Grounding Structure providing Radiated Noise Reduction
Hiroaki Ikeda (JAE), Kohji Koshiji (TUS), Akihisa Sakurai (IBM Japan) EMCJ2016-95
Providing an isolated part with a slit from the ground plane does not always work to reduce unintentional radiation. Tes... [more] EMCJ2016-95
pp.43-47
EMD 2014-01-31
14:50
Tokyo   A Study of Thermal Deformation of box type resin part in Reflow Process
Masayuki Tamura, Toshiyuki Shimoda (JAE) EMD2013-139
LCP is used many of Insulator(INS) materials. Resins of LCP have the big anisotropy of the coefficient of thermal expans... [more] EMD2013-139
pp.17-22
MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] 2014-01-24
09:25
Kyoto Doshisha University Fabrication of Mach-Zehnder type thermo-optic switch using proton beam writing
Kenta Miura (Gunma Univ.), Takahiro Satoh, Yasuyuki Ishii, Masashi Koka, Akihito Yokoyama, Tomihiro Kamiya (JAEA), Yuji Hiratani (Hiroshima International Univ.), Hiromu Kiryu, Yusuke Ozawa, Wataru Kada, Osamu Hanaizumi (Gunma Univ.) PN2013-85 OPE2013-199 LQE2013-185 EST2013-134 MWP2013-105
(To be available after the conference date) [more] PN2013-85 OPE2013-199 LQE2013-185 EST2013-134 MWP2013-105
pp.317-320
SCE 2013-10-02
15:35
Miyagi Tohoku University, RIEC [Invited Talk] Superconducting Transition Edge sensor for gamma-ray spectroscopy -- Aiming for nondestructive measurement of nuclear material --
Masashi Ohno, Shuichi Hatakeyama, Tomoya Irimatsukawa, Hiroyuki Takahashi (Univ. of Tokyo), R.m,t, Damayanthi, Chiko Otani (RIKEN), Takashi Yasumune, Kouji Takasaki (JAEA) SCE2013-24
(To be available after the conference date) [more] SCE2013-24
pp.27-30
SDM 2013-06-18
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties
Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-47
 [more] SDM2013-47
pp.19-23
SDM 2013-06-18
17:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] 4H-SiC MOS interface states studied by electron spin resonance spectroscopy
T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] SDM2013-64
pp.101-105
SDM, ED, CPM 2013-05-16
13:55
Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Identification of defect structures forming the deep levels in 4H-SiC
Hiroki Nakane, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Takeshi Ohshima (JAEA) ED2013-17 CPM2013-2 SDM2013-24
(To be available after the conference date) [more] ED2013-17 CPM2013-2 SDM2013-24
pp.7-12
SDM, ED, CPM 2013-05-17
14:55
Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Evaluation of the carrier lifetime of SiC for high-efficiency hydrogen generation
Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2013-33 CPM2013-18 SDM2013-40
The hydrogen generation by the electrolysis of water with using sunlight attracts an attention for as a next energy tech... [more] ED2013-33 CPM2013-18 SDM2013-40
pp.93-98
NS, IN
(Joint)
2013-03-08
11:30
Okinawa Okinawa Zanpamisaki Royal Hotel Visualization of Overlay Network using Autonomous System Relationships
Hiroko Nakamura Miyamura (JAEA), Hsiang-Yun Hu, Masahiro Yoshida (Univ. of Tokyo), Satoshi Ohzahata (Univ. of Electro-Comm.), Akihiro Nakao, Shigeo Takahashi (Univ. of Tokyo) NS2012-264
This report presents a method for visualizing scale-free networks. Scale-free networks are said to be difficult to analy... [more] NS2012-264
pp.577-582
SDM 2012-12-07
10:30
Kyoto Kyoto Univ. (Katsura) Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation
Kohji Murata, Tatsuya Morine, Hideharu Matsuura (Osaka Electro-Communication Univ), Shinobu Onoda, Takeshi Ohshima (JAEA) SDM2012-117
SiC has advantages of higher resistance to radiation and higher breakdown electric field, compared with Si. Therefore, S... [more] SDM2012-117
pp.13-18
OME 2012-10-17
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. Preparation of anion-exchange membranes using ionizing radiation and their cell testing
Hiroshi Koshikawa, Tetsuya Yamaki, Masaharu Asano, Kimio Yoshimura, Yasunari Maekawa (JAEA), Kazuya Yamamoto, Hideyuki Inotani, Koichiro Asazawa, Susumu Yamaguchi, Hirohisa Tanaka (Daihatsu)
 [more]
SDM, ED
(Workshop)
2012-06-27
11:30
Okinawa Okinawa Seinen-kaikan [Invited Talk] Gate Stack Technologies for Silicon Carbide Power MOS Devices
Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more]
ED, SDM, CPM 2012-05-18
11:15
Aichi VBL, Toyohashi Univ. of Technol. Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] ED2012-31 CPM2012-15 SDM2012-33
pp.67-72
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