Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
VLD, DC, RECONF, ICD, IPSJ-SLDM (Joint) [detail] |
2020-11-17 14:50 |
Online |
Online |
VLD2020-18 ICD2020-38 DC2020-38 RECONF2020-37 |
[more] |
VLD2020-18 ICD2020-38 DC2020-38 RECONF2020-37 pp.42-47 |
ED |
2019-11-22 09:25 |
Tokyo |
|
Evaluation of Gamma-ray Induced Current Generated on Cables Transferring Sensor Output under Radiation Fields Yasuhito Gotoh (Kyoto Univ.), Yasuki Okuno (JAEA), Nobuhiro Sato (Kyoto Univ.), Masafumi Akiyoshi (Osaka Pref. Univ.), Mitsuru Imaizumi (JAXA), Tomohiro Kobayashi (RIKEN), Tamotsu Okamoto (NIT, Kisarazu Coll.) ED2019-69 |
[more] |
ED2019-69 pp.39-42 |
MRIS, ITE-MMS, IEE-MAG |
2019-10-17 16:45 |
Fukuoka |
Kyushu University (Nishijin Plaza) |
Magnetic structure analysis in [Fe3Si/FeSi2]20 superlattice using polarized neutron reflectivity Takayasu Hanashima, Jun-ichi Suzuki, Kazuhisa Kakurai, Noboru Miyata (CROSS), Masayasu Takeda (JAEA), Satoshi Takeichi, Tsuyoshi Yoshitake (Kyushu Univ.), Ken-ichiro Sakai (Kurume NCT), Hiroyuki Deguchi (Kyushu Inst. Tech.) MRIS2019-24 |
[more] |
MRIS2019-24 pp.57-60 |
SDM |
2018-06-25 11:40 |
Aichi |
Nagoya Univ. VBL3F |
Control of SiO2/GaN Interface for High-performance GaN MOSFET Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18 |
A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] |
SDM2018-18 pp.11-14 |
MRIS, ITE-MMS |
2018-06-07 16:35 |
Miyagi |
Tohoku Univ. |
Exchange bias using antiferromagnetic Heusler alloy films Takahide Kubota, Tomoki Tsuchiya, Keita Ito, Tomoko Sugiyama (Tohoku Univ.), Yukiharu Takeda, Yuji Saitoh (JAEA), Akio Kimura (Hiroshima Univ.), Koki Takanashi (Tohoku Univ.) MRIS2018-8 |
[more] |
MRIS2018-8 pp.43-47 |
QIT (2nd) |
2017-11-17 14:40 |
Saitama |
Saitama University |
Mechanical generation of spin and spin current Mamoru Matsuo (Tohoku Univ.), Yuichi Ohnuma, Sadamichi Maekawa (JAEA) |
We review the interconversion phenomena between spin and mechanical angular momentum in moving objects. In particular, t... [more] |
|
IE, ITE-ME, ITE-AIT [detail] |
2017-10-05 13:50 |
Nagasaki |
|
Estimation of Facets of a Point Cloud Obtained from a Gallery Wall Using Multi-Dimensional Particle Swarm Optimization Yuto Matsuura, Shun Matsukawa, Ken-ichi Itakura (Muroran-IT), Akira Hayano (JAEA), Yukinori Suzuki (Muroran-IT) IE2017-49 |
It is necessary to identify discontinuities of a gallery wall to evaluate the stability of the gallery structure. A poin... [more] |
IE2017-49 pp.13-18 |
EMCJ |
2016-11-25 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Study of a Grounding Structure providing Radiated Noise Reduction Hiroaki Ikeda (JAE), Kohji Koshiji (TUS), Akihisa Sakurai (IBM Japan) EMCJ2016-95 |
Providing an isolated part with a slit from the ground plane does not always work to reduce unintentional radiation. Tes... [more] |
EMCJ2016-95 pp.43-47 |
EMD |
2014-01-31 14:50 |
Tokyo |
|
A Study of Thermal Deformation of box type resin part in Reflow Process Masayuki Tamura, Toshiyuki Shimoda (JAE) EMD2013-139 |
LCP is used many of Insulator(INS) materials. Resins of LCP have the big anisotropy of the coefficient of thermal expans... [more] |
EMD2013-139 pp.17-22 |
MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] |
2014-01-24 09:25 |
Kyoto |
Doshisha University |
Fabrication of Mach-Zehnder type thermo-optic switch using proton beam writing Kenta Miura (Gunma Univ.), Takahiro Satoh, Yasuyuki Ishii, Masashi Koka, Akihito Yokoyama, Tomihiro Kamiya (JAEA), Yuji Hiratani (Hiroshima International Univ.), Hiromu Kiryu, Yusuke Ozawa, Wataru Kada, Osamu Hanaizumi (Gunma Univ.) PN2013-85 OPE2013-199 LQE2013-185 EST2013-134 MWP2013-105 |
(To be available after the conference date) [more] |
PN2013-85 OPE2013-199 LQE2013-185 EST2013-134 MWP2013-105 pp.317-320 |
SCE |
2013-10-02 15:35 |
Miyagi |
Tohoku University, RIEC |
[Invited Talk]
Superconducting Transition Edge sensor for gamma-ray spectroscopy
-- Aiming for nondestructive measurement of nuclear material -- Masashi Ohno, Shuichi Hatakeyama, Tomoya Irimatsukawa, Hiroyuki Takahashi (Univ. of Tokyo), R.m,t, Damayanthi, Chiko Otani (RIKEN), Takashi Yasumune, Kouji Takasaki (JAEA) SCE2013-24 |
(To be available after the conference date) [more] |
SCE2013-24 pp.27-30 |
SDM |
2013-06-18 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-47 |
[more] |
SDM2013-47 pp.19-23 |
SDM |
2013-06-18 17:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
4H-SiC MOS interface states studied by electron spin resonance spectroscopy T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64 |
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] |
SDM2013-64 pp.101-105 |
SDM, ED, CPM |
2013-05-16 13:55 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
Identification of defect structures forming the deep levels in 4H-SiC Hiroki Nakane, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Takeshi Ohshima (JAEA) ED2013-17 CPM2013-2 SDM2013-24 |
(To be available after the conference date) [more] |
ED2013-17 CPM2013-2 SDM2013-24 pp.7-12 |
SDM, ED, CPM |
2013-05-17 14:55 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
Evaluation of the carrier lifetime of SiC for high-efficiency hydrogen generation Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2013-33 CPM2013-18 SDM2013-40 |
The hydrogen generation by the electrolysis of water with using sunlight attracts an attention for as a next energy tech... [more] |
ED2013-33 CPM2013-18 SDM2013-40 pp.93-98 |
NS, IN (Joint) |
2013-03-08 11:30 |
Okinawa |
Okinawa Zanpamisaki Royal Hotel |
Visualization of Overlay Network using Autonomous System Relationships Hiroko Nakamura Miyamura (JAEA), Hsiang-Yun Hu, Masahiro Yoshida (Univ. of Tokyo), Satoshi Ohzahata (Univ. of Electro-Comm.), Akihiro Nakao, Shigeo Takahashi (Univ. of Tokyo) NS2012-264 |
This report presents a method for visualizing scale-free networks. Scale-free networks are said to be difficult to analy... [more] |
NS2012-264 pp.577-582 |
SDM |
2012-12-07 10:30 |
Kyoto |
Kyoto Univ. (Katsura) |
Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation Kohji Murata, Tatsuya Morine, Hideharu Matsuura (Osaka Electro-Communication Univ), Shinobu Onoda, Takeshi Ohshima (JAEA) SDM2012-117 |
SiC has advantages of higher resistance to radiation and higher breakdown electric field, compared with Si. Therefore, S... [more] |
SDM2012-117 pp.13-18 |
OME |
2012-10-17 15:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Preparation of anion-exchange membranes using ionizing radiation and their cell testing Hiroshi Koshikawa, Tetsuya Yamaki, Masaharu Asano, Kimio Yoshimura, Yasunari Maekawa (JAEA), Kazuya Yamamoto, Hideyuki Inotani, Koichiro Asazawa, Susumu Yamaguchi, Hirohisa Tanaka (Daihatsu) |
[more] |
|
SDM, ED (Workshop) |
2012-06-27 11:30 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] |
|
ED, SDM, CPM |
2012-05-18 11:15 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33 |
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] |
ED2012-31 CPM2012-15 SDM2012-33 pp.67-72 |