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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-10-17
11:10		 Miyagi Niche, Tohoku Univ. Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD
Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91		 Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices.
We achieved to grow ... [more]		 SDM2014-91
pp.41-45
CPM 2010-07-30
09:55		 Hokkaido Michino-Eki Shari Meeting Room Atomic layer deposition (ALD) of vanadium nitride films using TDEAV
Mayumi B. Takeyama, Masaru Sato (kitami Inst. of Tech.), Hiroshi Sudoh, Hideaki Machida (Gas-phase Growth Ltd.), Shun Ito, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (kitami inst. of tech.) CPM2010-37		 An extremely thin barrier deposited at a low temperature is desired in Cu interconnects of 32 nm node technologies. We ... [more] CPM2010-37
pp.35-38
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