IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 17 of 17  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2017-11-07
16:00
Kumamoto Kumamoto-Kenminkouryukan Parea [Invited Talk] Researchs on high-speed and efficient Deep Learning technologies
Takuya Fukagai, Koichi Shirahata, Yasumoto Tomita, Tetsutaro Hashimoto, Atsushi Ike, Masafumi Yamazaki, Akihiko Kasagi, Tsuguchika Tabaru (Fujitsu Lab. Ltd.), Liuan Wang, Song Wang, Li Sun, Jun Sun (FRDC) CPM2017-86 ICD2017-45 IE2017-71
Fujitsu laboratories have been doing Research and Development on AI technologies called "Human Centric AI Zinrai".

We... [more]
CPM2017-86 ICD2017-45 IE2017-71
pp.39-41
EE 2016-01-29
13:20
Fukuoka KURUME HOTEL ESPRIT Anomaly Detection Technique of Duty Ratio in Switching Mode Power Supply Circuit
Takahiko Sugawara, Yu Yonezawa, Hiroshi Nakao, Yoshiyasu Nakashima (FUJITSU LAB. LTD.) EE2015-24
In this report, we suggest the technique to improve the reliability of the power supply with multiplexing an overcurrent... [more] EE2015-24
pp.91-96
ED 2014-12-22
14:35
Miyagi   Output power performance of InGaAs/InAlAs HEMT at 90-GHz band
Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101
InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ult... [more] ED2014-101
pp.15-19
ICD, ITE-IST 2013-07-04
10:55
Hokkaido San Refre Hakodate [Invited Talk] 32 Gb/s Data-Interpolator Receiver with 2-tap DFE in 28-nm CMOS
Yoshiyasu Doi, Takayuki Shibasaki, Takumi Danjo, Win Chaivipas, Takushi Hashida (Fujitsu Lab. Ltd.), Hiroki Miyaoka (FSL), Masanori Hoshino (FMSL), Yoichi Koyanagi (Fujitsu Lab. Ltd.), Takuji Yamamoto (FLA), Sanroku Tsukamoto, Hirotaka Tamura (Fujitsu Lab. Ltd.) ICD2013-27
We present a 32Gb/s data-interpolator receiver for electrical chip-to-chip communications. The receiver front-end is clo... [more] ICD2013-27
pp.19-24
CPM 2012-08-09
09:50
Yamagata   Low temperature deposition of SiNx thin films by radical-assisted reaction
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. Technol.), Yoshihiro Nakata, Yasushi Kobayashi, Tomoji Nakamura (Fujitsu Lab. Ltd.), Atsushi Noya (Kitami Inst. Technol.) CPM2012-45
3-dimensional stacked LSI is of high interest to overcome the issues how to develop the integration density and/or funct... [more] CPM2012-45
pp.51-54
ICD, SDM 2012-08-02
10:35
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Lecture] Comparison between power gating and DVFS from the view point of energy efficiency
Atsuki Inoue, Eiji Yoshida (Fujitsu Lab. Ltd.) SDM2012-66 ICD2012-34
 [more] SDM2012-66 ICD2012-34
pp.17-21
CNR 2011-05-12
15:20
Kanagawa Keio Univ. (Hiyoshi Campus) Cloud Computing and Robot Services -- RSI : Robot Service iitiative --
Yoshihiko Murakawa (Fujitsu Lab. LTD.) CNR2011-6
We describe efforts in robot services through cloud computing. We, RSi, developed common specifications (RSNP: Robot Ser... [more] CNR2011-6
pp.23-28
OPE 2010-12-17
18:20
Tokyo Kikai-Shinko-Kaikan Bldg. Slow-Light Silicon Mach-Zehnder Modulator Based-on Cascaded Ring Resonators
Suguru Akiyama (PETRA), Teruo Kurahashi (Fujitsu Lab. Ltd.), Takeshi Baba, Tatsuya Usuki, Tsuyoshi Yamamoto (PETRA) OPE2010-143
For silicon modulators, introducing resonators is effective way to obtain compact size and power-efficient operations be... [more] OPE2010-143
pp.65-70
ICD, SDM 2010-08-26
13:25
Hokkaido Sapporo Center for Gender Equality Design Constraint of Fine Grain Supply Voltage Control LSI -- In the case of Power Gating Technique --
Atsuki Inoue (Fujitsu Lab. Ltd.) SDM2010-132 ICD2010-47
Supply voltage control technique for realizing low power LSI is utilized not only for general purpose processors but als... [more] SDM2010-132 ICD2010-47
pp.45-49
ICD, SDM 2010-08-26
13:50
Hokkaido Sapporo Center for Gender Equality Design Constraint of Fine Grain Supply Voltage Control LSI -- In the case of DVFS Technique --
Atsuki Inoue (Fujitsu Lab. Ltd.) SDM2010-133 ICD2010-48
Supply voltage control technique for realizing low power LSI is utilized not only for general purpose processors but als... [more] SDM2010-133 ICD2010-48
pp.51-54
NS, IN
(Joint)
2010-03-04
09:40
Miyazaki Miyazaki Phoenix Seagaia Resort (Miyazaki) A DHT-based Replication Method on Data Management for P2P Content Delivery Services
Hisayuki Ohmata, Kiyohiko Ishikawa (NHK), Hironori Sakakihara, Toru Kamiwada (Fujitsu Lab. LTD.) IN2009-156
A P2P (Peer-to-Peer) technology can reduce the cost of content delivery services. However, the reliability against churn... [more] IN2009-156
pp.73-78
CPSY, DC
(Joint)
2009-08-04
- 2009-08-05
Miyagi   A Proposal of Forwarding Database Update Method in Large Scale InfiniBand System
Kohta Nakashima, Kouichi Kumon, Akira Naruse, Shinji Sumimoto (Fujitsu Lab. Ltd.) CPSY2009-21
This paper describes a proposal of forwarding database (FDB) update method in large scale InfiniBand system. In InfiniBa... [more] CPSY2009-21
pp.67-72
OCS 2009-02-02
16:05
Shizuoka   A compact 8 x 8 SOA gate switch subsystem for 256 x 256 optical packet interconnections
Yutaka Kai, Kyosuke Sone (Fujitsu Lab. Ltd.), Setsuo Yoshida, Yasuhiko Aoki, Goji Nakagawa, Susumu Kinoshita (Fujitsu Ltd.) OCS2008-113
We realized a compact 8 × 8 SOA (Semiconductor Optical Amplifier) gate switch subsystem using eight 8-input and 1-output... [more] OCS2008-113
pp.37-42
MW, ED 2009-01-16
09:30
Tokyo Kikai-Shinko-Kaikan Bldg C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency
Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) ED2008-218 MW2008-183
 [more] ED2008-218 MW2008-183
pp.113-118
MW, ED 2009-01-16
10:55
Tokyo Kikai-Shinko-Kaikan Bldg High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications
Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.) ED2008-221 MW2008-186
We reported on a technology to improve the three-terminal breakdown voltage of a GaN high electron mobility transistor (... [more] ED2008-221 MW2008-186
pp.129-133
SDM 2007-12-14
13:50
Nara Nara Institute Science and Technology Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method
Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.) SDM2007-229
We succeeded in the observation of dislocation motion in a thin Si1-xGex film (thickness = 56 nm and x = 0.24) on a Si s... [more] SDM2007-229
pp.31-34
ISEC, IPSJ-CSEC 2004-07-20
15:50
Tokushima Tokushima Univ. An Analysis of Feasibility for the Factoring Device TWIRL (I)
Tetsuya Izu, Kouichi Itoh, Jun Kogure, Kiyoshi Kohiyama, Takeshi Shimoyama, Masahiko Takenaka, Naoya Torii, Shouichi Masui (Fujitsu Lab. LTD.), Kenji Mukaida (Fujitsu)
This document reports an overview of our evaluation results of the dedicated factoring device TWIRL by reviewing the cir... [more] ISEC2004-23
pp.61-68
 Results 1 - 17 of 17  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan