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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EMCJ, IEE-EMC, IEE-MAG 2016-06-02
13:51
Overseas NTU, Taiwan [Poster Presentation] Design and Application of Radio Frequency Current Probe for IC-EMI Measurement
Jeff Cheng, Yen-Tang Chang (BSMI), Han-Nien Lin (Feng-Chia Univ.) EMCJ2016-30
 [more] EMCJ2016-30
pp.35-38
EMD 2013-11-16
08:50
Overseas Huazhong University of Science and Technology, Wuhan, P.R.China Preparation of WC@SnO2Core-shell Composite and Its Application in AgSnO2Contact Material
Qiu Jianmei, Shen Qianhong, Zhang Lingjie, Yang Hui (Zhejiang Univ.), Fan Xianping (Wenzhou Hongfeng Electrical Alloy), Chen Lesheng (Zhejiang Univ.) EMD2013-114
WC@SnO2 core-shell composite were fabricated by a modified sol-gel method, in which nano-scaled SnO2 particles were unif... [more] EMD2013-114
pp.163-166
EMD 2013-11-17
11:20
Overseas Huazhong University of Science and Technology, Wuhan, P.R.China Effects of ZnO powder prepared by different methods on the properties of Ag/ZnO Electric Contact Materials
Zhijun Wei, Lingjie Zhang, Qianhong Shen (Zhejiang Univ.), Lawson Chen (Wenzhou Hongfeng Electrical Alloy), Xianping Fan, Yang Hui (Zhejiang Univ.) EMD2013-111
Ag/ZnO electrical contact material was fabricated by powder metallurgy (PM) method. Three different zinc oxide powders w... [more] EMD2013-111
pp.151-154
SDM, ED
(Workshop)
2012-06-27
16:00
Okinawa Okinawa Seinen-kaikan A New RSD Bottom Gate Poly-Si Thin Film Transistor With Inside Spacer
Yi-Hsiang Chiu, Shan-Jen Yang, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ.)
In this research, a raised source/drain (RSD), accompanied with an inside spacer bottom gate poly-Si thin film transisto... [more]
SDM, ED
(Workshop)
2012-06-27
16:15
Okinawa Okinawa Seinen-kaikan The study on A Novel Asymmetric Poly-Si Thin Film Transistor With Low Drain Electric Field
Meng-Shan Chi, Tzung-Ju Lin, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ.)
We propose a asymmetric poly-Si thin film transistor with a thicker drain and a thicker dielectric near the drain region... [more]
SDM, ED 2009-06-24
17:15
Overseas Haeundae Grand Hotel, Busan, Korea A new Combination of RSD and Inside Spacer Thin Film Transistor
M. J. Chang, T. C. Li, F. T. Chien (Feng Chia Univ.), C. N. Liao, Y. T. Tsai (National Central Univ.) ED2009-67 SDM2009-62
 [more] ED2009-67 SDM2009-62
pp.75-78
SDM, ED 2009-06-25
11:45
Overseas Haeundae Grand Hotel, Busan, Korea A New Bottom-Gated Polysilicon Thin Film Transistors with Polysilicon spacer
Y. J. Chen, T. C. Li, F. T. Chien (Feng Chia Univ.), C. N. Liao, Y. T. Tsai (National Central Univ.) ED2009-77 SDM2009-72
 [more] ED2009-77 SDM2009-72
pp.121-124
EA, US
(Joint)
2009-01-30
15:35
Kyoto   Development of blind signal extraction device based on noise estimation by parallel ICAs
Takashi Hiekata, Youhei Ikeda, Hiroshi Hashimoto, Takashi Morita (Kobe Steel), Ruoyu Zhang (Feng), Yu Takahashi, Hiroshi Saruwatari, Kiyohiro Shikano (NAIST) EA2008-135
A new blind signal extraction method in widespread noise conditions is proposed, which is based on multiple frequency-do... [more] EA2008-135
pp.115-120
SDM, ED 2008-07-11
11:05
Hokkaido Kaderu2・7 Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET
Chien-Nan Liao (National Central Univ.), Jhih-Chao Huang, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ. of Sci. and Tech.), Yao-Tsung Tsai (National Central Univ.) ED2008-74 SDM2008-93
Power MOSFETs are used as control switches in many application. Comparing with bipolar junction transistor, power MOSFET... [more] ED2008-74 SDM2008-93
pp.183-186
SDM, ED 2008-07-11
11:20
Hokkaido Kaderu2・7 The Analysis of the Floating Field Limiting Ring and Field Plate
Chien-Nan Liao (National Central Univ.), Jhih-Chao Huang, Feng-Tso Chien, Ching-Hwa Cheng (Feng Chia Univ.), Yao-Tsung Tsai (National Central Univ.) ED2008-75 SDM2008-94
Potential and strength of surface electric field distribution have strongly influence on breakdown voltage and reliabili... [more] ED2008-75 SDM2008-94
pp.187-191
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