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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-12-01 14:50 |
Shizuoka | Fabrication of vertical AlGaN-based UV-B LD Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Koki Hattori, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Hideto Miyake (Mie Univ.), Kohei Miyoshi, Koichi Naniwae (Ushio Inc.), Akihiko Yamaguchi (Seishin Trading Co. Ltd.)  ED2023-33 CPM2023-75 LQE2023-73 |
In this study, we report on the fabrication method and characteristics of vertical UV-B laser diodes, which are advantag... [more] | ED2023-33 CPM2023-75 LQE2023-73 pp.84-87 |
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| SITE, ISEC, HWS, EMM, BioX, IPSJ-CSEC, IPSJ-SPT, ICSS [detail] | 2020-07-21 15:45 |
Online | Online | Key Holding System Without Exchanging Common Key between Users
-- TS Key Holding System -- Nobuharu Suzuki, Kouji Sasaki (Adin), Takahiro Yoshimura, Ken-ya Yoshimura (Monolith), Toshio Tsuji (Vega), Masao Yamasawa, Masahito Gotaishi, Shigeo Tsujii (Chuo Univ.) ISEC2020-29 SITE2020-26 BioX2020-32 HWS2020-22 ICSS2020-16 EMM2020-26 |
[more] | ISEC2020-29 SITE2020-26 BioX2020-32 HWS2020-22 ICSS2020-16 EMM2020-26 pp.99-103 |
| TL | 2019-07-27 16:10 |
Hyogo | Hirao Seminar House, Konan University | [Poster Presentation]
Effects of Repeated Exposure to Phonetic Segments and Feedback on Non-Native Phonetic Perception Development Hiroki Fujita (UOR), Ruri Ueda, Ken-ichi Hashimoto (OKU) TL2019-16 |
[more] | TL2019-16 p.23 |
| ISEC, SITE, ICSS, EMM, HWS, BioX, IPSJ-CSEC, IPSJ-SPT [detail] | 2019-07-24 13:45 |
Kochi | Kochi University of Technology | 3 Layers Public Key Cryptosystem with a Short Tandem Repeat DNA for Ultimate Personal Identification
-- Introduction of Short Tandem Repeat Coupled with Mai Nanbaa and its Application -- Shigeo Tsujii, Toshiaki Saisho, Masao Yamasawa, Ko Shikata (Chuo Univ.), Koji Sasaki, Nobuharu Suzuki (Ad.) ISEC2019-52 SITE2019-46 BioX2019-44 HWS2019-47 ICSS2019-50 EMM2019-55 |
Considering the current situation, where personal verification with digital authentication is becoming important in the ... [more] | ISEC2019-52 SITE2019-46 BioX2019-44 HWS2019-47 ICSS2019-50 EMM2019-55 pp.341-346 |
| WIT | 2013-12-12 15:15 |
Tokyo | AIST Tokyo Waterfront | Seated Posture Measurement App for Android Mobile Devices Hiroyuki Suzuki, Haruki Honda, Takashi Handa (SAITEC), Koji Sano (Yuki Trading) WIT2013-64 |
(To be available after the conference date) [more] | WIT2013-64 pp.21-26 |
| EMCJ (2nd) |
2012-11-30 13:50 |
Tokyo | NICT | Transient voltage measurement on a PC Board exposed by a small gap spark discharge Satoshi Isofuku (TET), Masamitsu Honda (IPL) |
[more] | |
| ICD, ITE-IST | 2010-07-23 17:00 |
Osaka | Josho Gakuen Osaka Center | A Study of Simulation Methodologies to Simulate the Buck and Boost DC-DC Converters in High-Speed Masahiro Suzuki (Chuo Univ.), Syoko Sugimoto (AdIn), Yasuhiro Sugimoto (Chuo Univ.) ICD2010-37 |
As the DC-DC converter is a mixed system of analog and digital functions, it is hard to simulate its transient responses... [more] | ICD2010-37 pp.127-132 |
| SDM | 2010-02-05 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Feasibility Study of 70nm Pitch Cu/Porous Low-k D/D Integration Featuring EUV Lithography toward 22nm Generation Naofumi Nakamura, Noriaki Oda, Eiichi Soda, Nobuki Hosoi, Akifumi Gawase, Hajime Aoyama, Y. Tanaka, D. Kawamura, S. Chikaki, M. Shiohara, Nobuaki Tarumi, S. Kondo, Ichiro Mori, S. Saito (SELETE) SDM2009-184 |
A feasibility study of 70 nm pitch 2-level dual damascene interconnects featuring EUV lithography is presented. Using Ru... [more] | SDM2009-184 pp.13-18 |
| WIT | 2010-01-08 15:45 |
Tokyo | Shibaura Univ. | Development of Seated Posture Measurement Device Handa Takashi (SAITEC), Taro Kemmoku (Hiraga Gishi), Koji Sano (Yuki Trading), Hideyuki Hirose (Nat.Rehab.), Takafumi Izutsu (Takenoduka Hospital), Hiroshi Koga (Nursing Home Asakusa), Takashi Kinose (N.I.M.S.) WIT2009-75 |
We developed the Seated Posture Measurement Instrument which can measure seated posture according to ISO16840-1 standard... [more] | WIT2009-75 pp.41-46 |
| SDM | 2009-11-13 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation Hironori Sakamoto, Hiroshi Arimoto, Hiroo Masuda, Satoshi Funayama, Shigetaka Kumashiro (MIRAI-Selete) SDM2009-148 |
[more] | SDM2009-148 pp.73-78 |
| SDM | 2009-06-19 15:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] | SDM2009-38 pp.67-70 |
| OPE | 2008-12-19 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
[Invited]Trend of On-Chip Optical Interconeect Development Keishi Ohashi (NEC / MIRAI-Selete) OPE2008-140 |
Increases in the data transmission rate intra-chip and between chips have been kept under the increase in processor perf... [more] | OPE2008-140 pp.23-24 |
| SDM | 2008-12-05 13:15 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | [Invited Talk]
Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.) SDM2008-188 |
[more] | SDM2008-188 pp.21-25 |
| ICD, SDM | 2008-07-17 09:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations Motoyuki Sato, Yoshihiro Sugita, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete) SDM2008-128 ICD2008-38 |
Using (110) substarate is one of promissing candidate for pMOSTET boost technology. (110) surface shows not only higher ... [more] | SDM2008-128 ICD2008-38 pp.1-6 |
| ICD, SDM | 2008-07-18 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fabrication of Ultra Shallow Junction and Improvement of Metal Gate High-k CMOS Performance by FSP-FLA (Flexibly-Shaped-Pulse Flash-Lamp-Annealing) Technology Takashi Onizawa, Shinichi Kato, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (selete) SDM2008-146 ICD2008-56 |
We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ... [more] | SDM2008-146 ICD2008-56 pp.103-108 |
| SDM | 2008-06-10 10:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack
-- Origin of Change in Effective Work Function of Ru -- Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-50 |
2.5nm-thick HfSiON layers were deposited on thermally-grown SiO2 in the thickness range of 1 to 6nm or 0.7nm-thick SiON ... [more] | SDM2008-50 pp.47-52 |
| SDM | 2008-06-10 11:20 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52 |
~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000º... [more] | SDM2008-52 pp.59-64 |
| CAS, NLP | 2007-10-19 14:10 |
Tokyo | Musashi Institute of Technology | On the Emotion Analysis Method of Wearing Clothes based on Fractal Shinya Okonogi, Heer Vaseng, Masahiro Nakagawa (Nagaoka Univ of Technology), Kimiyasu Imai, Sigetosi Amiya (Kuraray. Inc), Kiyoshi Takizawa (Kuraray trading .Inc) CAS2007-60 NLP2007-88 |
In this report, the purpose is directed towards recognition of EEG signals by focusing on affective evalution of three k... [more] | CAS2007-60 NLP2007-88 pp.47-52 |
| ICD, SDM | 2007-08-24 13:00 |
Hokkaido | Kitami Institute of Technology | [Special Invited Talk]
Towards Great Nanoelectronics Country, Japan Hisatsune Watanabe (Selete) SDM2007-162 ICD2007-90 |
[more] | SDM2007-162 ICD2007-90 p.117 |
| SDM | 2007-06-08 10:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) SDM2007-42 |
The threshold voltage shift was analyzed for the FETs with HfSiOx or HfSiON films. It was found that the NBTI slope, B (... [more] | SDM2007-42 pp.59-64 |
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