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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2009-12-04 16:30 |
Nara | NAIST | Chemical composition dependence of electrical characteristics of NiO thin films for ReRAM Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)  SDM2009-168 |
Nickel Oxide (NiO), known as non-stoichiometric compound, is expected as a candidate of ReRAM because of its resistive s... [more] | SDM2009-168 pp.89-92 |
| SDM | 2009-12-04 16:50 |
Nara | NAIST | Mechanism elucidation of ReRAM by application of new analytical method Tatsuya Makino, Kentaro Kinoshita, Kazufumi Doashi, Takatoshi Yoda, Satoru Kishida (Tottori Univ.) SDM2009-169 |
We clarified that both HRS and LRS of the NiO film written by using conducting atomic force microscopy (C-AFM) can be di... [more] | SDM2009-169 pp.93-96 |
| SDM | 2009-12-04 17:10 |
Nara | NAIST | Characterization of defects in NiO thin films for ReRAM Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) SDM2009-170 |
NiO thin films showing resistive switching characteristics have recently attracted extensive interest as one of the mate... [more] | SDM2009-170 pp.97-100 |
| SDM | 2008-12-05 10:30 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Effects of annealing on the structures and electrical characteristics of NiO thin films for ReRAM Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) SDM2008-184 |
NiO thin films showing resistive switching characteristics have recently attracted extensive interest as one of the mate... [more] | SDM2008-184 pp.1-4 |
| SDM | 2007-12-14 11:20 |
Nara | Nara Institute Science and Technology | Electrical conduction characteristics of NiO thin films for ReRAM Ryota Suzuki, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2007-226 |
Since NiO thin films have resistive switching characteristics, NiO is one of the attractive materials for ReRAM. In this... [more] | SDM2007-226 pp.19-22 |
| SDM | 2007-03-15 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Reset switching mechanism of ReRAM using thermal reaction model Yoshihiro Sato, Kentaro Kinoshita, Hideyuki Noshiro, Masaki Aoki, Yoshihiro Sugiyama (FUJITSU LAB.) |
We investigated the resistive memory (ReRAM) cells with binary metal oxide (BMO) junctions by applying a short voltage p... [more] | SDM2006-255 pp.7-10 |
| ICD | 2006-04-13 13:50 |
Oita | Oita University | [Special Invited Talk]
A Metal-Oxide Resistance Changing type NVM Technology Masao Taguchi (Spansion) |
Abstract A non-volatile-memory technology so called ReRAM which utilizes electrical switching behavior of a thin insula... [more] | |
| ICD | 2006-04-13 16:40 |
Oita | Oita University | [Panel Discussion]
What is your urgent task in R/D of new embedded memories? Hideto Hidaka (Renesas), Masao Taguchi (SPANSION), Takayuki Kawahara (Hitachi), Daisaburo Takashima (Toshiba), Shuichi Ueno (Renesas), Masashi Takata (Kanazawa Univ.), Masafumi Takahashi (Toshiba) |
Recent advent of emerging memory devices circa 2000 has seen discussions directed mainly to stand-alone memory applicati... [more] | ICD2006-9 p.49 |
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