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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM |
2007-06-25 15:05 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
Electrochemical formation and sensor application of InP porous nanostructures Taketomo Sato, Toshiyuki Fujino, Tamotsu Hashizume (Hokkaido Univ.) |
A two-step electrochemical process was developed to form high-density array of InP porous nanostructures. By the subsequ... [more] |
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ED |
2007-06-16 10:10 |
Toyama |
Toyama Univ. |
Anodic oxidation on n-GaN surface using photoelectrochemical process Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-42 |
This paper reports the feasibility of oxidation on n-GaN surface using photoelectrochemical process in a mixed solution ... [more] |
ED2007-42 pp.61-65 |
SDM, ED |
2007-02-02 11:25 |
Hokkaido |
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Fabrication and Characterization of Three-GaAs Nanowire-Junction Devices Controlled by Schottky Wrap Gates Tatsuya Nakamura, Seiya Kasai, Yuta Shiratori, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
ED2006-253 SDM2006-241 pp.73-77 |
MW, ED |
2007-01-19 13:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE) |
Schottky wrap gate (WPG) controlled AlGaN/GaN nanowire FETs were fabricated and characterized. The devices with channel ... [more] |
ED2006-232 MW2006-185 pp.179-182 |
ED, SDM, R |
2006-11-24 16:05 |
Osaka |
Central Electric Club |
Seiya Kasai, Alberto F. Basile, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
R2006-37 ED2006-182 SDM2006-200 pp.33-38 |
ED, CPM, LQE |
2006-10-05 15:20 |
Kyoto |
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Interface control for GaN-based electron devices Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University) |
[more] |
ED2006-157 CPM2006-94 LQE2006-61 pp.29-34 |
ED, CPM, SDM |
2006-05-19 13:10 |
Aichi |
VBL, Toyohashi University of Technology |
Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
ED2006-36 CPM2006-23 SDM2006-36 pp.91-94 |
ED, SDM |
2006-01-27 10:55 |
Hokkaido |
Hokkaido Univ. |
Investigation of GaAs-based single electron device for hexagnal BDD single electron logic curcuit Yuji Abe, Tatsuya Nakamura, Takahiro Tamura, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa (Hokkaido Univ) |
(To be available after the conference date) [more] |
ED2005-235 SDM2005-247 pp.21-26 |
ED, MW |
2006-01-19 10:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of Gate-Lag Phenomena in Unpassivarwd AlGaN/GaN HEMTs Alberto F. Basile, Junji Kotani, Tamotsu Hashizume (Hokkaido Univ) |
[more] |
ED2005-200 MW2005-154 pp.7-12 |
ED, MW |
2006-01-19 11:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
C-V characterization of GaN-based MIS structures at high temperatures Hiroki Kato, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
ED2005-201 MW2005-155 pp.13-16 |
R, ED, SDM |
2005-11-25 15:55 |
Osaka |
Central Electric Club |
Investigation of gate leakage current and gate control anomalies in nanometer-scale Schottky gate AlGaN/GaN HFETs Seiya Kasai, Junji Kotani, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) |
Anomalous gate leakage current and gate control anomaly in AlGaN/GaN HFETs having nanometer-scale Schottky gates were in... [more] |
R2005-46 ED2005-181 SDM2005-200 pp.47-52 |
LQE, ED, CPM |
2005-10-13 15:40 |
Shiga |
Ritsumeikan Univ. |
Lateral tunneling transport in submicron gates on AlGaN/GaN HFET Junji Kotani, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
ED2005-132 CPM2005-119 LQE2005-59 pp.67-70 |
LQE, ED, CPM |
2005-10-13 17:20 |
Shiga |
Ritsumeikan Univ. |
Formation of AlGaN/GaN nano wire network using selective RF-MBE Takeshi Oikawa, Taketomo Sato, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
ED2005-137 CPM2005-124 LQE2005-64 pp.89-92 |
LQE, ED, CPM |
2005-10-14 13:00 |
Shiga |
Ritsumeikan Univ. |
Liquid sensor using gateless AlGaN/GaN HEMT structure Takuya Kokawa, Takeshi Kimura, Taketomo Sato, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
ED2005-147 CPM2005-134 LQE2005-74 pp.39-42 |
LQE, ED, CPM |
2005-10-14 13:20 |
Shiga |
Ritsumeikan Univ. |
Hydrogen Gas Sensors of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure Kazushi Matsuo, Takeshi Kimura, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
ED2005-148 CPM2005-135 LQE2005-75 pp.43-46 |
MW, ED |
2005-01-18 13:00 |
Tokyo |
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- Tamotsu Hashizume, Masamitsu Kaneko (Hokkaido Univ.) |
[more] |
ED2004-218 MW2004-225 pp.37-40 |
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