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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 41 - 51 of 51 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2008-01-30
16:20		 Hokkaido   Control of Nonlinear Characteristics in GaAs-based Three-terminal Nanowire Junction Devices and its Application to Logic Gates
Shaharin Fadzli Abd Rahman, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.) ED2007-243 SDM2007-254		  [more] ED2007-243 SDM2007-254
pp.33-38
ED, SDM 2008-01-31
11:15		 Hokkaido   Implementation of active and sequential circuits on GaAs-based nanowire network structures controlled by Schottky wrap gates
Seiya Kasai (Hokkaido Univ., JST), Hong-Quan Zhao, Tamotsu Hashizume (Hokkaido Univ.) ED2007-249 SDM2007-260		 Implementation of active and sequential circuits on semiconductor-based nanowire networks with a specific topology and p... [more] ED2007-249 SDM2007-260
pp.63-68
SDM, ED 2007-02-01
16:00		 Hokkaido   Investigation of A Novel Logic Circuit Implementation Scheme Utilizing Topological Correlation between Logic Graph by Decision Diagram and Nanowire Network Structures
Seiya Kasai, Tatsuya Nakamura, Yuta Shiratori (Hokkaido Univ.) 		This report presents study on a novel scheme to implement logic information processing function on nanowire network stru... [more] ED2006-245 SDM2006-233
pp.29-34
SDM, ED 2007-02-02
11:25		 Hokkaido   Fabrication and Characterization of Three-GaAs Nanowire-Junction Devices Controlled by Schottky Wrap Gates
Tatsuya Nakamura, Seiya Kasai, Yuta Shiratori, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2006-253 SDM2006-241
pp.73-77
MW, ED 2007-01-19
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs
Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE) 		Schottky wrap gate (WPG) controlled AlGaN/GaN nanowire FETs were fabricated and characterized. The devices with channel ... [more] ED2006-232 MW2006-185
pp.179-182
ED, SDM, R 2006-11-24
16:05		 Osaka Central Electric Club
Seiya Kasai, Alberto F. Basile, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] R2006-37 ED2006-182 SDM2006-200
pp.33-38
ED, SDM 2006-01-27
10:30		 Hokkaido Hokkaido Univ. Study on switching characteristics of quantum wire transistors and single electron transistors controlled by Schottky wrap gate for ultra-low power quantum nano integrated logic circuits
Seiya Kasai, Miki Yumoto, Hideki Hasegawa (Hokkaido Univ.) 		To confirm the ultra-low power consumption capability of quantum nano integrated logic circuits, such as nanoprocessors,... [more] ED2005-234 SDM2005-246
pp.15-20
ED, SDM 2006-01-27
10:55		 Hokkaido Hokkaido Univ. Investigation of GaAs-based single electron device for hexagnal BDD single electron logic curcuit
Yuji Abe, Tatsuya Nakamura, Takahiro Tamura, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa (Hokkaido Univ) 		(To be available after the conference date) [more] ED2005-235 SDM2005-247
pp.21-26
R, ED, SDM 2005-11-25
15:55		 Osaka Central Electric Club Investigation of gate leakage current and gate control anomalies in nanometer-scale Schottky gate AlGaN/GaN HFETs
Seiya Kasai, Junji Kotani, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) 		Anomalous gate leakage current and gate control anomaly in AlGaN/GaN HFETs having nanometer-scale Schottky gates were in... [more] R2005-46 ED2005-181 SDM2005-200
pp.47-52
LQE, ED, CPM 2005-10-13
15:40		 Shiga Ritsumeikan Univ. Lateral tunneling transport in submicron gates on AlGaN/GaN HFET
Junji Kotani, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2005-132 CPM2005-119 LQE2005-59
pp.67-70
LQE, ED, CPM 2005-10-14
13:00		 Shiga Ritsumeikan Univ. Liquid sensor using gateless AlGaN/GaN HEMT structure
Takuya Kokawa, Takeshi Kimura, Taketomo Sato, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2005-147 CPM2005-134 LQE2005-74
pp.39-42
 Results 41 - 51 of 51 [Previous]  /   
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