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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2010-07-02 16:15 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.)  ED2010-122 SDM2010-123 |
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] | ED2010-122 SDM2010-123 pp.319-324 |
| SDM | 2010-06-22 11:45 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of Chemical Bonding Features and Electrical Properties of Ge MIS and Ge/Metal Structures Tomohiro Fujioka, Tatsuya Bando, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2010-38 |
[more] | SDM2010-38 pp.27-32 |
| SDM | 2010-06-22 16:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | The influence of Y incorporation into TiO2 on Electronic States and Resistive Switching Characteristics Akio Ohta, Yuta Goto, Mohd Fairuz Kamarulzaman, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2010-47 |
[more] | SDM2010-47 pp.79-84 |
| ED, SDM | 2010-02-22 15:15 |
Okinawa | Okinawaken-Seinen-Kaikan | Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.) ED2009-201 SDM2009-198 |
We investigated formation of Si nanocrystals in SiOx (1.0 < x < 1.9) films induced by millisecond annealing using therma... [more] | ED2009-201 SDM2009-198 pp.29-33 |
| SDM | 2009-12-04 15:50 |
Nara | NAIST | Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-166 |
Thermal plasma jet (TPJ) induced millisecond annealing has been performed to SiO2 films deposited at 300C by remote plas... [more] | SDM2009-166 pp.79-82 |
| SDM, ED | 2009-06-25 12:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor Hideki Murakami, Syed Mahboob, Kiyotaka Katayama, Katsunori Makihara, Mitsuhisa Ikeda, Yumehiro Hata, Akio Kuroda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2009-87 SDM2009-82 |
We have focused on silica binding protein(SBP)-tagged protein A as a key element for bio-sensing since this combined pro... [more] | ED2009-87 SDM2009-82 pp.161-164 |
| SDM, ED | 2009-06-26 11:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki (Hiroshima Univ.) ED2009-92 SDM2009-87 |
Silicon-quantum-dots (Si-QDs) with an areal density as high as ~1012cm-2 were self-assembled on thermally-grown SiO2 by ... [more] | ED2009-92 SDM2009-87 pp.181-184 |
| SDM | 2009-06-19 14:30 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Photoemission Study of Suboxides on GeO2/Ge Structure Formed by Thermal and Low Temperature Processes Hideki Murakami, Yoshikazu Ono, Akio Ohta, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-36 |
The chemical bonding features of ultrathin Ge oxide layers, which were prepared on Ge(100) by wet-chemical treatment, lo... [more] | SDM2009-36 pp.57-60 |
| SDM | 2009-06-19 16:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-42 |
A stack structure consisting of ~1.3nm-thick LaOx and ~4.0nm-thick HfO2 was formed on thermally grown SiO2 on Si(100) by... [more] | SDM2009-42 pp.87-92 |
| SDM | 2009-06-19 17:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of Chemical Bonding Features and Electronic States at TiO2/Pt Interface Yuta Goto, Daisuke Kanme, Akio Ohta, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima University) SDM2009-44 |
We focused on the interfacial reaction between TiO2 and Pt to gain a better understanding of the mechanism of resistive ... [more] | SDM2009-44 pp.99-103 |
| SDM, ED | 2008-07-10 09:00 |
Hokkaido | Kaderu２・７ | Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Hiroshima Univ.) ED2008-54 SDM2008-73 |
We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at ... [more] | ED2008-54 SDM2008-73 pp.77-80 |
| SDM, ED | 2008-07-10 10:55 |
Hokkaido | Kaderu２・７ | Electrical Detection of Si-Tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces S. Mahboob, Katsunori Makihara, Hirotaka Kaku, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki, Akio Kuroda (Hiroshima Univ.) ED2008-69 SDM2008-88 |
We successfully detected silicon-binding proteins such as Si-tagged protein A, green fluorescent protein (GFP) and lucif... [more] | ED2008-69 SDM2008-88 pp.155-158 |
| SDM, ED | 2008-07-11 13:35 |
Hokkaido | Kaderu２・７ | Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 Hirotaka Kaku, Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2008-90 SDM2008-109 |
Formation of highly crystallized Ge films on quartz substrate from VHF-ICP of GeH4 and electrical properties of the film... [more] | ED2008-90 SDM2008-109 pp.271-274 |
| SDM | 2008-06-10 10:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack
-- Origin of Change in Effective Work Function of Ru -- Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-50 |
2.5nm-thick HfSiON layers were deposited on thermally-grown SiO2 in the thickness range of 1 to 6nm or 0.7nm-thick SiON ... [more] | SDM2008-50 pp.47-52 |
| SDM | 2008-06-10 11:20 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52 |
~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000º... [more] | SDM2008-52 pp.59-64 |
| SDM | 2007-12-14 13:30 |
Nara | Nara Institute Science and Technology | In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-228 |
In-situ measurement technique of temperature profile in Si wafer during millisecond rapid thermal annealing has been dev... [more] | SDM2007-228 pp.27-29 |
| ED, SDM | 2007-06-25 13:50 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
Multiply-stacked structures of Si quantum dots (Si-QDs) in gate oxide are attracting much attention because of their pot... [more] | |
| ED, SDM | 2007-06-25 14:15 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | Impact of Boron Doping to Si Quantum Dots on Light Emission Properties Kazuki Okuyama, Katsunori Makihara, Akio Ohta, Hideki Murakami, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) |
[more] | |
| SDM | 2007-06-07 14:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD Masahi Miura, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Masayuki Kohno, Tatsuo Nishida, Toshio Nakanishi (TEL) SDM2007-34 |
The depth profiling of chemical composition and defect state density in tensile- and compressive-SiNx films formed on ch... [more] | SDM2007-34 pp.17-22 |
| SDM | 2007-06-07 16:20 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Workfunction Tuning of B Doped Fully-Silicided Pd2Si Gate Hiroyuki Shiraishi, Takuji Hosoi, Akio Ohta, Seiichi Miyazaki, Kentaro Shibahara (Hiroshima Univ.) SDM2007-37 |
[more] | SDM2007-37 pp.33-36 |
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