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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, OME | 2010-04-23 13:50 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Characterization of Sputtered-Si Films for Photo-Sensor Diodes Jean de Dieu Mugiraneza, Tomoyuki Miyahira, Akinori Sakamoto, Takashi Noguchi (Univ. of Ryukyus), Ching-Ping Chiu, Meng-Hsin Chen, Wen-Chang Yeh (NTUST)  SDM2010-8 OME2010-8 |
[more] | SDM2010-8 OME2010-8 pp.33-37 |
| SDM, ED | 2009-06-25 11:45 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Effective Annealing for Si film Takashi Noguchi, Tomoyuki Miyahira, Yeh Chen, Jean de dieu Mugiraneza (Univ. of Ryukyus) ED2009-85 SDM2009-80 |
[more] | ED2009-85 SDM2009-80 pp.153-156 |
| OME, SDM | 2009-04-24 16:40 |
Saga | AIST Kyushu-center | Crystallization and annealing of heavily doped p-type Si film and electronic properties Takashi Noguchi, Tomoyuki Miyahira (Univ. of the Ryukyus), Toshiharu Suzuki (SEN) SDM2009-6 OME2009-6 |
[more] | SDM2009-6 OME2009-6 pp.25-28 |
| SCE | 2009-01-29 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | EFFECT OF THE ENERGY-GAP BROADENING ON SUBGAP CURRENT OF SIS JUNCTIONS Takashi Noguchi, Toyoaki Suzuki, Akira Endo, Tomonori Tamura (National Astronomical Observatory) SCE2008-34 |
(To be available after the conference date) [more] | SCE2008-34 pp.11-16 |
| SCE | 2009-01-29 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Origin of subgap current in an SIS junction Toyoaki Suzuki, Takashi Noguchi, Akira Endo, Hiroshi Matsuo (National Astronomical Observatory of Japan) SCE2008-35 |
The subgap current in an SIS junction is reduced exponentially as the temperature decreases. However, the reduction is s... [more] | SCE2008-35 pp.17-21 |
| SCE | 2008-07-24 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Effect of the imaginary part of the gap energy on the quasiparticle tunneling current in SIS junctions Takashi Noguchi, Akira Endo, Tomonori Tamura, Yoko Kiuchi (NAOJ) |
[more] | |
| SCE | 2008-07-24 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A novel THz SIS mixer with a NbTiN-groundplane and SIS micro-trylayers directly grown on a quartz substrate Akira Endo (Univ. of Tokyo, NAOJ, JSPS Research Fellow), Takashi Noguchi, Matthias Kroug, Sergey V. Shitov (NAOJ), Shan Wenlei (PMO), Tomonori Tamura (NAOJ), Takafumi Kojima (Osaka Pref. Univ.), Yoshinori Uzawa, Takeshi Sakai (NAOJ), Hirofumi Inoue (Univ. of TokyoNAOJ), Kotaro Kohno (Univ. of Tokyo) SCE2008-17 |
A new structure and fabrication process for multi-material THz-SIS mixers is proposed. In this design, both the micromet... [more] | SCE2008-17 pp.13-18 |
| SDM, OME | 2008-04-11 10:35 |
Okinawa | Okinawa Seinen Kaikan | Electrical activation of heavily doped Si film by crystallization annealing Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN) SDM2008-4 OME2008-4 |
After UV pulsed excimer laser annealing for highly boron-, or phosphorus dosed Si film, the relationship between the c... [more] |
SDM2008-4 OME2008-4 pp.17-22 |
| SDM, OME | 2008-04-11 11:25 |
Okinawa | Okinawa Seinen Kaikan | Evaluation of stress and crystallinity of laser crystallization polysilicon thin film using UV/Visible Raman spectroscopy Yasuto Kakemura, Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Takashi Noguchi (Univ. of the Ryukyus) SDM2008-6 OME2008-6 |
Low temperature polysilicon (LTPS) thin film is a key material for the systems-on-glass achievement. Depth and in-plane ... [more] | SDM2008-6 OME2008-6 pp.27-32 |
| SDM, OME | 2008-04-12 10:00 |
Okinawa | Okinawa Seinen Kaikan | Low-temperature Solid-Phase Crystallization of a-Ge on Glass Substrate for Advanced Thin-Film transistor Isakane Nakao, Kaoru Toko (Kyushu Univ.), Takashi Noguchi (Univ. Ryukyus), Taizoh Sadoh (Kyushu Univ.) SDM2008-17 OME2008-17 |
Concentrations and mobilities of intrinsic holes in poly-Ge films grown on quartz substrates were investigated. The Hall... [more] | SDM2008-17 OME2008-17 pp.83-88 |
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