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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, SDM, ED |
2011-05-20 15:40 |
Aichi |
Nagoya Univ. (VBL) |
Fabrication of non-polar a-plane nitride based solar cells Tatsuro Nakao, Yosuke Kuwahara, Yasuharu Fuziyama, Takahiro Fujii, Toru Sugiyama, Shota Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-32 CPM2011-39 SDM2011-45 |
n this study, we fabricated and charactrized nitride-based solar cells on a non-polar a-plane GaN template on an r-plane... [more] |
ED2011-32 CPM2011-39 SDM2011-45 pp.163-167 |
CPM, SDM, ED |
2011-05-20 16:05 |
Aichi |
Nagoya Univ. (VBL) |
Fabrication of nitride-based solar cells electrode structure Shota Yamamoto, Yoshiki Morita, Yosuke Kuwahara, Takahiro Fujii, Toru Sugiyama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-33 CPM2011-40 SDM2011-46 |
We used grid electrode for improving efficiency of nitride-based photovoltaic cell. Compared with the conventional semit... [more] |
ED2011-33 CPM2011-40 SDM2011-46 pp.169-173 |
CPM, SDM, ED |
2011-05-20 16:40 |
Aichi |
Nagoya Univ. (VBL) |
Current collapse in GaN-based HFETs
-- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate -- Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47 |
We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] |
ED2011-34 CPM2011-41 SDM2011-47 pp.175-178 |
CPM, SDM, ED |
2011-05-20 17:05 |
Aichi |
Nagoya Univ. (VBL) |
Study on AlInN barrier layer of GaInN channel HFET Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Naofumi Horio, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-35 CPM2011-42 SDM2011-48 |
GaInN channel heterostructure field-effect transistors (HFETs) are promising for applications involving high operation c... [more] |
ED2011-35 CPM2011-42 SDM2011-48 pp.179-183 |
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