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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2009-01-16 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.)  ED2008-219 MW2008-184 |
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more] | ED2008-219 MW2008-184 pp.119-123 |
| MW, ED | 2009-01-16 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Mesa-gate AlGaN/GaN HEMT having nano-width channels Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2008-223 MW2008-188 |
The surrounding field effect was effectively observed in a multi-mesa channel (MMC) using an AlGaN/GaN structure, where ... [more] | ED2008-223 MW2008-188 pp.141-144 |
| LQE, ED, CPM | 2008-11-28 16:10 |
Aichi | Nagoya Institute of Technology | Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ) ED2008-183 CPM2008-132 LQE2008-127 |
The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated... [more] | ED2008-183 CPM2008-132 LQE2008-127 pp.155-159 |
| CPM, ED, SDM | 2008-05-15 15:50 |
Aichi | Nagoya Institute of Technology | Investigation of deep levels in GaPN by photoconductivity transient measurement Keita Izumi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.) ED2008-7 CPM2008-15 SDM2008-27 |
In order to realize an optoelectronic integrated circuit(OEIC) united Si integrated circuit and luminescent device, a lu... [more] | ED2008-7 CPM2008-15 SDM2008-27 pp.29-34 |
| ED | 2007-11-27 13:30 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Research on SiGe/Si HEMT for millimeter-wave band operation Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187 |
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] | ED2007-187 pp.1-5 |
| ED | 2007-11-27 14:45 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe (NICT), Yoshimi Yamashita (Fujitsu Lab.), Takashi Mimura, Toshiaki Matsui (NICT) ED2007-190 |
We fabricated sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) t... [more] | ED2007-190 pp.17-21 |
| ED | 2007-11-27 17:20 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Emission of terahertz electromagnetic radiation from a 2-dimensional plasmon-resonant emitter of a HEMT structure Hiroyuki Handa, Yohei Hosono, Hiroki Tsuda, Yahya Moubarak Meziani, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2007-195 |
We have fabricated the 2D plasmon resonant emitter which contains double grating gate structure and estimated its emissi... [more] | ED2007-195 pp.45-50 |
| SDM, R, ED | 2007-11-16 14:15 |
Osaka | High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217 |
We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] | R2007-49 ED2007-182 SDM2007-217 pp.19-22 |
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| SDM | 2007-06-08 11:20 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44 |
This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. T... [more] | SDM2007-44 pp.71-74 |
| OPE, LQE, OCS | 2006-10-13 16:10 |
Fukuoka | Kyusyu Univ. Chikushi Campus | Optical Response of InP-based HEMT and its Applications to High-Speed Photo-Detector and Converter Noriyo Kobayashi, Hiroshi Murata (Osaka Univ.), Toshihiko Kosugi, Takatomo Enoki (NTT), Yasuyuki Okamura (Osaka Univ.) OCS2006-60 OPE2006-113 LQE2006-102 |
Optical response and optical mixing in millimeter-wave transistors has studied. We measured the changes in the characte... [more] | OCS2006-60 OPE2006-113 LQE2006-102 pp.103-108 |
| ED, CPM, SDM | 2006-05-19 10:50 |
Aichi | VBL, Toyohashi University of Technology | Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.) |
We fabricated pMOSFETs and LEDs using lattice-matched n-Si/III-V-N layers/p-Si-substrate structures for monolithic optoe... [more] | ED2006-33 CPM2006-20 SDM2006-33 pp.73-78 |
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