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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 41 - 60 of 64 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2012-12-18
11:40
Miyagi Tohoku University High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes
Mikhail Patrashin, Norihiko Sekine, Akifumi Kasamatsu, Issei Watanabe, Iwao Hosako (NICT), Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Naoki Hara (Fujitsu Lab.) ED2012-106
Increasing interest to high-resolution active and passive MMW-THz imaging and high-speed wireless data communications mo... [more] ED2012-106
pp.75-76
ED, LQE, CPM 2012-11-29
13:30
Osaka Osaka City University Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction
Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.) ED2012-70 CPM2012-127 LQE2012-98
We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diod... [more] ED2012-70 CPM2012-127 LQE2012-98
pp.21-24
ED 2012-07-27
09:55
Fukui Fukui University Modeling of nonlinear quantum transport for tunnel diodes and theoretical analysis of its cut-off frequency
Shin Yamashita, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-49
A resonant tunneling diode (RTD) is one of electron devices which can operate at room temperature in the terahertz range... [more] ED2012-49
pp.43-48
ED 2012-07-27
10:20
Fukui Fukui University Large-signal analysis of injection locking and frequency comb properties in array oscillators consisting of resonant tunneling diodes integrated with wideband antennas
Kiyoto Asakawa, Atsushi Tashiro, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-50
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] ED2012-50
pp.49-54
ED 2011-12-14
16:15
Miyagi Tohoku University Nonlinear analysis for zero bias detection by using a triple-barrier resonant tunneling diode integrated with a ultra wideband antenna
Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Metropolitan Univ.) ED2011-106
Zero bias detection effective to realize low-power consumption and minimization of detector in terahertz frequency regio... [more] ED2011-106
pp.35-40
ED 2011-12-14
16:40
Miyagi Tohoku University Time domain analysis of ultra high speed modulation by using a Resonant Tunneling Diode integrated with an antenna
Yosuke Itagaki, Mitsufumi Saito, Michihiko Suhara (Tokyo Metropolitan Univ.) ED2011-107
Resonant tunneling diode (RTD) is expected to perform terahertz applications because of its negative
differential condu... [more]
ED2011-107
pp.41-44
ED 2011-07-30
11:40
Niigata Multimedia system center, Nagaoka Univ. of Tech. Identification of a nonlinear equivalent circuit in triple-barrier resonant tunneling diodes by using the particle swarm optimization method
Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Met. Univ.) ED2011-52
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] ED2011-52
pp.73-77
SDM, ED 2011-02-24
09:55
Hokkaido Hokkaido Univ. A Traveling Wave Amplifier Based on Resonant Tunneling Diode Pairs Employing Composite Right/Left Handed Transmission Line Configuration
Koichi Maezawa, Koji Kasahara, Jie Pan, Masayuki Mori (Univ. Toyama) ED2010-201 SDM2010-236
This paper proposes a traveling wave amplifier based on transmission
lines (TLs) periodically loaded with resonant tu... [more]
ED2010-201 SDM2010-236
pp.53-56
ED 2010-12-16
13:30
Miyagi Tohoku University (Research Institute of Electrical Communication) [Invited Talk] Terahertz Oscillating Resonant Tunneling Diode at Room Temperature
Safumi Suzuki, Masahiro Asada (Tokyo Tech.) ED2010-158
We report on recent results of terahertz oscillators using resonant tunneling diodes. We achieved a fundamental oscillat... [more] ED2010-158
pp.1-6
ED 2010-12-16
14:10
Miyagi Tohoku University (Research Institute of Electrical Communication) Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators
Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159
We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on I... [more] ED2010-159
pp.7-12
ED 2010-09-13
15:20
Fukuoka Kyushu Institute of Technology(Wakamatsu) Characterization and modeling of triple-barrier resonant tunneling diodes
Michihiko Suhara, Kiyoto Asakawa, Yosuke Itagaki, Mitsufumi Saito, Hideaki Shin-ya, Satoshi Takahagi (Tokyo Metro Univ.) ED2010-127
Resonant tunneling diodes have been investigated for their wide varieties of physical interests and applications since t... [more] ED2010-127
pp.25-30
ED, SDM 2010-06-30
16:10
Tokyo Tokyo Inst. of Tech. Ookayama Campus Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures
Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-61 SDM2010-62
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) ha... [more] ED2010-61 SDM2010-62
pp.47-48
ED 2010-06-18
10:25
Ishikawa JAIST Theoretical analysis of operating conditions to suppress relaxation oscillations in Resonant Tunneling Diode biased at negative differential resistance region
Yosuke Itagaki, Kiyoto Asakawa, Hideaki Shin-ya, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro.Univ) ED2010-43
A resonant tunneling diode (RTD) is an active device with negative differential resistance operating up to THz region in... [more] ED2010-43
pp.53-58
ED 2009-11-30
09:00
Osaka Osaka Science & Technology Center Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation
Kiyohito Sawada, Safumi Suzuki, Atsushi Teranishi, Masato Shiraishi, Masahiro Asada (Tokyo Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2009-166
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunneling diodes (RTDs) hav... [more] ED2009-166
pp.37-40
SDM, ED 2009-02-26
16:30
Hokkaido Hokkaido Univ. Ultrahigh-Speed Comparator with Resonant-Tunneling Diodes
Tomohiko Ebata, Uichiro Ohmae, Kazuya Machida, Takao Waho (Sophia Univ.) ED2008-230 SDM2008-222
A comparator with resonant tunneling diodes in proposed to reduce the regeneration time. The proposed circuit has been a... [more] ED2008-230 SDM2008-222
pp.35-40
ED 2008-06-14
09:25
Ishikawa Kanazawa University Parameter Estimation of Nonliner Equivalent Circuit in Compound Ssemiconductor Triple-Barrier Resonant Tunneling Diodes
Yuichi Iki, Masaaki Shinada, Mamoru Naoi, Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (TMU) ED2008-33
For compound semiconductor triple-barrier resonant tunneling diodes (TBRTDs), nonlinear equivalent circuits and voltage ... [more] ED2008-33
pp.61-66
ED 2008-06-14
09:50
Ishikawa Kanazawa University Fabrication of Resonant Tunneling Devic Blocks for Fluidic Self-Assembly
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals) ED2008-34
Fluidic Self-Assembly (FSA) is an innovative technique for heterogeneous integration. This technique enables us to assem... [more] ED2008-34
pp.67-72
ED, SDM 2008-01-31
10:15
Hokkaido   Ultra-short pulse generators using resonant tunneling diodes and their integration with antenna on AlN ceramic substrates
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Hiroya Andoh (Toyota College Tech.), Kazuhiro Akamatsu, Hirofumi Nakata (Nippon Mining & Metals) ED2007-247 SDM2007-258
Ultra-short pulse generations were demonstrated on the two types of
resonant tunneling diode (RTD) pulse generators. T... [more]
ED2007-247 SDM2007-258
pp.51-56
ED, SDM 2008-01-31
10:50
Hokkaido   Analysis on 4RTD Logic Circuits
Tomohiko Ebata, Hiroki Okuyama, Takao Waho (Sophia Univ.) ED2007-248 SDM2007-259
4RTD logic operation has been analyzed based on a circuit model, circuit simulation, and experiment. First, equations de... [more] ED2007-248 SDM2007-259
pp.57-62
ED 2007-11-27
16:30
Miyagi Tohoku Univ. Research Institute of Electrical Communication Generation of THz signals using nonlinear waves in semiconductor devices and circuits
Koichi Narahara (Yamagata Univ.) ED2007-193
We discuss several topics concerning the generation and management of THz signals using nonlinear waves in semiconductor... [more] ED2007-193
pp.33-38
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