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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2018-06-25 13:30 |
Aichi | Nagoya Univ. VBL3F | [Invited Lecture]
Inversion channel diamond MOSFET
-- Formation of diamond MOS interface by wet annealing -- Tsubasa Matsumoto (Kanazawa Univ.), Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi (AIST), Takao Inokuma (Kanazawa Univ.), Satoshi Yamasaki (AIST), Norio Tokuda (Kanazawa Univ.)  SDM2018-20 |
We fabricated inversion channel diamond MOSFET with normally off characteristics. The diamond MOSFET with the inversion ... [more] | SDM2018-20 pp.19-22 |
| EMCJ, MICT (Joint) |
2018-03-16 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High frequency decoupling for reduction of common-mode current of three-phase inverter Shiki Fujii (Kyoto Univ.), Tohlu Matsushima (Kyutech), Takashi Hisakado, Osami Wada (Kyoto Univ.) EMCJ2017-111 |
Recently, electric vehicles have been developed rapidly, and three-phase inverters are also used in its motor drive circ... [more] | EMCJ2017-111 pp.37-42 |
| WPT (2nd) |
2017-12-09 - 2017-12-11 |
Overseas | National University of Singapore(AWPT2017) | Novel Extended Non-Breakdown Rectifier Topologies for Power-Optimized Waveform based Wireless Power Transfer Systems Hao Zhang (NUST), Zheng Zhong, Yong-Xin Guo (NUS), Wen Wu (NUST) |
This paper presents two novel extended non-breakdown rectifier topologies, which practically solve the rectifier?s early... [more] | |
| WPT, EMCJ (Joint) |
2017-11-21 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Relation between parasitic coupling around power MOSFET and excitation of common-mode voltage Tohlu Matsushima, Takao Kuroyanagi, Takashi Hisakado, Osami Wada (Kyoto Univ.) EMCJ2017-61 |
In this report, it is formalized that common-mode voltages are excited by switching current flows on parasitic capacitor... [more] | EMCJ2017-61 pp.13-18 |
| SDM | 2017-11-09 13:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET Atsushi Sakai, Katsumi Eikyu (REL), Fujii Hiroki, Takahiro Mori (RSMC), Yutaka Akiyama, Yasuo Yamaguchi (REL) SDM2017-63 |
This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without deg... [more] | SDM2017-63 pp.11-14 |
| SDM | 2017-11-09 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Characterization and modeling of SiC power MOSFET Takashi Sato, Kazuki Oishi, Masayuki Hiromoto (Kyoto Univ.), Michihiro Shintani (NAIST) SDM2017-65 |
(To be available after the conference date) [more] | SDM2017-65 pp.21-26 |
| SDM, ICD, ITE-IST [detail] | 2017-07-31 10:15 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | Multi Sensor Operation using Octagonal Multi-Output MOSFET Tomochika Harada (Yamagata Univ.) SDM2017-32 ICD2017-20 |
By using the Si material and the MOSFET type as the sensor device, it is possible to fabricate the various sensor device... [more] | SDM2017-32 ICD2017-20 pp.7-12 |
| SDM, ICD, ITE-IST [detail] | 2017-08-01 13:50 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | Evaluation of equivalent MOSFET reduced temperature dependence of threshold voltage Takuya Yamaguchi, Tatsuya Oku, Kawori Sekine (Meiji Univ.) SDM2017-41 ICD2017-29 |
A MOSFET has a temperature dependence of threshold voltage and mobility. In this paper, we focused on threshold voltage ... [more] | SDM2017-41 ICD2017-29 pp.77-82 |
| SDM, ICD, ITE-IST [detail] | 2017-08-02 11:35 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2017-45 ICD2017-33 |
The gate controlled diode characteristics with our newly super steep subthreshold slope (SS) “PN-Bode Tied SOI FET” was ... [more] | SDM2017-45 ICD2017-33 pp.109-114 |
| EMCJ, EMD | 2017-07-21 13:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Circuit simulation of a Hybrid DC Circuit Breaker consisted of electric contacts and Semiconductor switch Kyotaro Nakayama, Shungo Zen, Koichi Yasuoka (Tokyo Inst. of Tech.) EMCJ2017-25 EMD2017-13 |
Recently, a hybrid DC circuit breaker consisted of metal contacts, semiconductor devices and a varistor is intensely stu... [more] | EMCJ2017-25 EMD2017-13 pp.1-6 |
| MW (2nd) |
2017-06-14 - 2017-06-16 |
Overseas | KMUTT, Bangkok, Thailand | [Short Paper]
RF Characteristics of SOTB Devices for GHz Frequency Applications Van-Trung Nguyen, Koichiro Ishibashi (UEC) |
The paper presents RF characteristics of the 65nm SOTB CMOS devices for 1GHz range. With many superior features such as ... [more] | |
| EMD | 2017-03-03 14:15 |
Chiba | Relationship of molten bridge and arcless commutation during current interruption of Hybrid DCCB Yuta Yamada, Chen Mo, Kyotaro Nakayama, Tatsuya Hayakawa, Shungo Zen, Koichi Yasuoka (Titech) EMD2016-103 |
In recent years, with the increase in demand for DC power distribution, hybrid DC circuit breakers in which electrical c... [more] | EMD2016-103 pp.17-20 |
|
| EMD, R | 2017-02-17 16:20 |
Shiga | Omuron Kusatsu Factory | DC300 V-150 A arcless current interruption by using arcless hybrid DC circuit breaker Tatsuya Hayakawa, Kyotaro Nakayama, Shungo Zen, Koichi Yasuoka (Titech) R2016-69 EMD2016-96 |
(To be available after the conference date) [more] | R2016-69 EMD2016-96 pp.53-58 |
| ICD, CPM, ED, EID, EMD, MRIS, OME, SCE, SDM, QIT (Joint) [detail] |
2017-01-31 14:10 |
Hiroshima | Miyajima-Morino-Yado(Hiroshima) | Automatic Design of Operational Amplifier Based on Equation-Based and Genetic Algorithm Kento Suzuki, Nobukazu Takai, Yoshiki Sugawara, Satoshi Yoshizawa, Kazuto Okochi, Tsukasa Ishii, Saki Shinoda, Masafumi Fukuda (Gunma Univ.) EMD2016-83 MR2016-55 SCE2016-61 EID2016-62 ED2016-126 CPM2016-127 SDM2016-126 ICD2016-114 OME2016-95 |
It is difficult to design optimal analog circuit in a short time in terms of designing flexibility because the electrica... [more] | EMD2016-83 MR2016-55 SCE2016-61 EID2016-62 ED2016-126 CPM2016-127 SDM2016-126 ICD2016-114 OME2016-95 pp.69-74 |
| EMD | 2016-12-16 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Arcless Hybrid DC Circuit Breaker Using Tungsten and Carbon Contacts Tatsuya Hayakawa, Kyotaro Nakayama, Koichi Yasuoka (Titech) EMD2016-66 |
A hybrid circuit breaker consists of power semiconductor devices and a varistor connected in parallel with an electrical... [more] | EMD2016-66 pp.7-12 |
| ICD, CPSY | 2016-12-16 09:40 |
Tokyo | Tokyo Institute of Technology | Automatic Design of Bias Circuit Based on the Results of Characterized MOSFET Kento Suzuki, Nobukazu Takai, Yoshiki Sugawara, Kazuto Okochi, Satoshi Yoshizawa, Tsukasa Ishii, Saki Shinoda, Masafumi Fukuda (Gunma Univ.) ICD2016-91 CPSY2016-97 |
It is difficult to design optimal analog circuit in a short time in terms of designing flexibility. In an analog circuit... [more] | ICD2016-91 CPSY2016-97 pp.119-122 |
| SDM, EID | 2016-12-12 15:15 |
Nara | NAIST | Study of the inverter circuit of DNA/Si-MOSFET due to the parasitic capacitance control Hibiki Nakano, Matsuo Naoto, Akira Heya, Tadao Takada, Kazusige Yamana (Univ. of Hyogo), Tadashi Sato, Shin Yokoyama (Univ. Hiroshima) EID2016-23 SDM2016-104 |
An input/output characteristics of the inverter composed of the DNA/Si-MOSFET and the parasitic capacity was studied. Th... [more] | EID2016-23 SDM2016-104 pp.63-66 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-29 09:00 |
Osaka | Ritsumeikan University, Osaka Ibaraki Campus | Design and Implementation Methodology of Low-power Standard cell memory with optimized body-bias separation in Silicon-on-Thin-BOX (SOTB) Yusuke Yoshida, Kimiyoshi Usami (Shibaura Institute of Tech.) VLD2016-53 DC2016-47 |
We focus on the Standard Cell Memory (SCM) as another option to supersede SRAM for low-voltage operation. This paper des... [more] | VLD2016-53 DC2016-47 pp.55-60 |
| SDM | 2016-11-10 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Potential and Prospects of Low-Energy SOI Devices in Sensor Network Era Yasuhisa Omura (Kansai Univ.) SDM2016-81 |
This paper discusses, in detail, the potential and prospects of various SOI devices including SOI TFETs. Device perform... [more] | SDM2016-81 pp.15-22 |
| SDM | 2016-10-27 10:50 |
Miyagi | Niche, Tohoku Univ. | Behavior of Random Telegraph Noise toward Bias Voltage Changing Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2016-75 |
As the progression of MOSFETs scaling down continues, the impacts of RTN (Random Telegraph Noise) on the MOSFETs have be... [more] | SDM2016-75 pp.35-38 |
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