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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW (2nd) |
2017-06-14 - 2017-06-16 |
Overseas | KMUTT, Bangkok, Thailand | [Short Paper]
RF Characteristics of SOTB Devices for GHz Frequency Applications Van-Trung Nguyen, Koichiro Ishibashi (UEC) |
The paper presents RF characteristics of the 65nm SOTB CMOS devices for 1GHz range. With many superior features such as ... [more] | |
| EMD | 2016-12-16 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Arcless Hybrid DC Circuit Breaker Using Tungsten and Carbon Contacts Tatsuya Hayakawa, Kyotaro Nakayama, Koichi Yasuoka (Titech)  EMD2016-66 |
A hybrid circuit breaker consists of power semiconductor devices and a varistor connected in parallel with an electrical... [more] | EMD2016-66 pp.7-12 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
CMOS Transimpedance Analog Front End Circuit for an Optical Probe Current Sensor Kousuke Oyangi, Kousuke Miyaji (Shinshu Univ.) ICD2016-74 CPSY2016-80 |
An optical probe current sensor using the magneto-optical effect has been studied for power electronics. This sensor sho... [more] | ICD2016-74 CPSY2016-80 p.67 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
A Study of High-Speed RGB-LED Driver using Carrier Sweeping out for Visible Light Communications Zicheng Kang, Yusuke Matsuda, Yusuke Kozawa, Yohtaro Umeda (TUS) ICD2016-84 CPSY2016-90 |
Recently, light emitting diodes (LED) are commonly used as a lighting devices. LEDs have lots of advantages, such as hi... [more] |
ICD2016-84 CPSY2016-90 pp.95-100 |
| CPM, LQE, ED | 2016-12-12 15:45 |
Kyoto | Kyoto University | Normally-off operation of planar GaN MOS-HFET Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79 |
Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] | ED2016-63 CPM2016-96 LQE2016-79 pp.31-34 |
| SDM | 2016-11-10 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Potential and Prospects of Low-Energy SOI Devices in Sensor Network Era Yasuhisa Omura (Kansai Univ.) SDM2016-81 |
This paper discusses, in detail, the potential and prospects of various SOI devices including SOI TFETs. Device perform... [more] | SDM2016-81 pp.15-22 |
| ICD, SDM, ITE-IST [detail] | 2016-08-01 09:15 |
Osaka | Central Electric Club | [Invited Talk]
Accelerating the Sensing World through Imaging Evolution Yusuke Oike, Hayato Wakabayashi, Tetuo Nomoto (Sony Semiconductor Solutions) SDM2016-48 ICD2016-16 |
This presentation introduces the evolution of image sensors and the future prospect of sensing applications utilizing th... [more] | SDM2016-48 ICD2016-16 p.1 |
| EMCJ | 2016-05-13 15:40 |
Hokkaido | Hokkaido University | Influence of Mutual Induction on Switching Characteristics Inside a High Speed Power Converter Ko Ogata, Keiji Wada (TMU) EMCJ2016-17 |
Recently, because of the development of power devices such as SiC and GaN devices, influence of parasitic parameters whi... [more] | EMCJ2016-17 pp.47-52 |
| OFT, OCS, OPE (Joint) [detail] |
2016-02-18 10:55 |
Okinawa | Okinawa Univ. | Direct Fabrication for Smooth End Facets on GI-core Polymer Waveguide Using the Mosquito Method Tadayuki Enomoto, Takaaki Ishigure (Keio Univ.) OCS2015-100 OFT2015-59 OPE2015-219 |
In this paper, we fabricate graded index (GI) circular core polymer optical waveguides using the Mosquito method, and de... [more] | OCS2015-100 OFT2015-59 OPE2015-219 pp.1-5(OCS), pp.23-27(OFT), pp.23-27(OPE) |
| LQE, EST, OPE, EMT, PN, MWP, IEE-EMT, PEM [detail] | 2016-01-28 11:20 |
Hyogo | Prototype of Ku-band Outphase Amplifier for Millimeter-wave Wireless Communication System Yuto Maeda, Hidehisa Shiomi, Yasuyuki Okamura (Osaka Univ.) PN2015-51 EMT2015-102 OPE2015-164 LQE2015-151 EST2015-108 MWP2015-77 |
In recent years, communication traffic is increasing because of explosive spread of wireless mobile terminals. Millime... [more] |
PN2015-51 EMT2015-102 OPE2015-164 LQE2015-151 EST2015-108 MWP2015-77 pp.95-100 |
|
| ED | 2016-01-20 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
State-of-the-art technology of gallium oxide power devices Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114 |
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] | ED2015-114 pp.13-18 |
| MI | 2015-11-11 14:30 |
Nara | NAIST | Automatic determination of blood flow velocity in brain microvessel of rat
-- Comparison of the multiple automatic determination -- Haruka Dejima, Tetsuo Sato, Makito Haruta, Hitomi Nakazawa, Takashi Tokuda, Jun Ohta, Shigehiko Kanaya (NAIST) MI2015-65 |
Functional Magnetic Resonance Imaging (fMRI) and Positron Emission Tomography (PET) are often used for imaging particula... [more] | MI2015-65 pp.37-41 |
| ED | 2015-07-25 10:40 |
Ishikawa | IT Business Plaza Musashi 5F | Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain Haruki Kinoshita, Seiko Netsu, Yuichi Mishima, Toru Kanazawa, Yasuyuki Miyamoto (Tokyo Tech) ED2015-44 |
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] | ED2015-44 pp.39-44 |
| MI | 2015-07-15 15:10 |
Hokkaido | Sun Refle Hakodate | Automatic determination of blood flow velocity in brain microvessel of rat using a small implantable CMOS imaging device Haruka Dejima, Tetsuo Sato, Makito Haruta, Hitomi Nakazawa, Takashi Tokuda, Jun Ohta, Shigehiko Kanaya (NAIST) MI2015-45 |
Functional Magnetic Resonance Imaging (fMRI) and Positron Emission Tomography (PET) are often used for imaging particula... [more] | MI2015-45 pp.73-77 |
| CPSY, IPSJ-EMB, IPSJ-SLDM, DC [detail] | 2015-03-07 08:55 |
Kagoshima | Improvements and evaluation of bias circuit control for CMOS analog circuit Ryohei Hori (Ritsumeikan Univ.), Toshio Kumamoto (OSU), Masayoshi Shirahata, Takeshi Fujino (Ritsumeikan Univ.) CPSY2014-175 DC2014-101 |
The power control using Noff (Normally-off) scheme for realization low power sensor node device is gathering a lot of at... [more] | CPSY2014-175 DC2014-101 pp.77-82 |
|
| OPE, LQE | 2014-12-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan, NTT Atsugi R&D center | Thermal resistance improvement and low-resistance lateral PIN junction formation technique on III-V-OI wafers Yuki Ikku, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) OPE2014-146 LQE2014-133 |
III-V CMOS photonics is a platform which enables strong optical confinement to the III-V waveguides by using III-V-on-In... [more] | OPE2014-146 LQE2014-133 pp.37-40 |
| OME, OPE | 2014-11-21 13:00 |
Tokyo | [Invited Talk]
Development of biomedical photonic devices based on CMOS sensor technology Takashi Tokuda, Hiroaki Takehara, Toshihiko Noda, Kiyotaka Sasagawa, Jun Ohta (NAIST) OME2014-47 OPE2014-127 |
CMOS-based implantable devices for bioscientific and medical applications are presented and discussed. Concept, design, ... [more] | OME2014-47 OPE2014-127 pp.1-6 |
|
| SDM | 2014-11-06 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Spice Model of SiC Power MOSFET (DioMOS)
-- Modeling Methodology for Reverse Current-voltage Characteristics of SiC -- Tetsuya Yamamoto, Tetsuro Sawai, Nobuyuki Horikawa, Yoshihiko Kanzawa, Kenji Mizutani, Nobuyuki Otsuka, Eiji Fujii (Panasonic) SDM2014-99 |
This paper presents a novel methodology to design a compact but precise SPICE model which reproduces complete current-vo... [more] | SDM2014-99 pp.19-24 |
| ICD, SDM | 2014-08-05 13:05 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | [Invited Talk]
Oxide Semiconductor-based Transistors Formed in LSI Interconnects Hiroshi Sunamura, Naoya Furutake, Shinobu Saito, Mitsuru Narihiro, Yoshihiro Hayashi (REL) SDM2014-76 ICD2014-45 |
We report on the latest progress on our proposed new transistor technology called BEOL-FET, in which we form oxide-based... [more] | SDM2014-76 ICD2014-45 pp.77-82 |
| OPE, LQE | 2014-06-20 16:40 |
Tokyo | Small, low-crosstalk optical switches using III-V CMOS photonics platform Yuki Ikku, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) OPE2014-21 LQE2014-26 |
III-V CMOS photonics is a platform which enables strong optical confinement for the III-V waveguides by using III-V on i... [more] | OPE2014-21 LQE2014-26 pp.39-42 |
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