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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2009-11-19 13:30 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Mapping of luminous intensity saturation if InGaN/GaN SQWs studied by scanning near-field optical microscopy Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)  ED2009-136 CPM2009-110 LQE2009-115 |
The spatially resolved photoluminescence mappings under the various carrier densities are performed to clarify the pheno... [more] | ED2009-136 CPM2009-110 LQE2009-115 pp.39-42 |
| ED, LQE, CPM | 2009-11-19 13:55 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates Atsushi Kobayashi, Kazuma Shimomoto, Kohei Ueno, Tomofumi Kajima, Jitsuo Ohta (Univ. of Tokyo), Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo/JST) ED2009-137 CPM2009-111 LQE2009-116 |
ZnO has been regarded as an ideal substrate for epitaxial growth of nonpolar group III nitride films because its structu... [more] | ED2009-137 CPM2009-111 LQE2009-116 pp.43-46 |
| ED, LQE, CPM | 2009-11-19 17:35 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Proposal of ultrathin InN-based asymmetric structure III-N QWs for novel photonic devices
-- Development from emitters into solar cells -- Kazuhide Kusakabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.) ED2009-145 CPM2009-119 LQE2009-124 |
For a development of photonic devices utilizing InN properties, it is necessary to control (1) the p-type conductivity i... [more] | ED2009-145 CPM2009-119 LQE2009-124 pp.81-84 |
| SDM, ED | 2009-06-25 08:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Electron Devices Based on GaN and Related Nitride Semiconductors Masaaki Kuzuhara (Univ. of Fukui) ED2009-70 SDM2009-65 |
State-of-the-art performance and future perspectives of III-nitride high-voltage and high-power transistors have been de... [more] | ED2009-70 SDM2009-65 pp.87-92 |
| LQE | 2009-05-22 13:30 |
Toyama | Kanazawa Univ. | High-speed and high-efficient light-emitting diodes using plasmonics Koichi Okamoto (Kyoto Univ./JST), Yoichi Kawakami (Kyoto Univ.) LQE2009-10 |
Surface plasmon generated at an interface between a metal and a dielectric material brings novel optical properties and ... [more] | LQE2009-10 pp.49-54 |
| LQE, ED, CPM | 2008-11-27 10:20 |
Aichi | Nagoya Institute of Technology | A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo) ED2008-154 CPM2008-103 LQE2008-98 |
Selective area metal-organic vapor phase epitaxy (SA-MOVPE) allows in-plane control of layer composition and thickness. ... [more] | ED2008-154 CPM2008-103 LQE2008-98 pp.13-16 |
| LQE, ED, CPM | 2008-11-27 15:50 |
Aichi | Nagoya Institute of Technology | Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells Mitsuru Funato, Keita Hayashi, Masaya Ueda, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia Corp.) ED2008-164 CPM2008-113 LQE2008-108 |
We demonstrate that the apparent emission colors of InGaN-based LEDs using micro-structured multifacet quantum wells as ... [more] | ED2008-164 CPM2008-113 LQE2008-108 pp.57-60 |
| LQE, ED, CPM | 2008-11-28 09:50 |
Aichi | Nagoya Institute of Technology | Luminescence properties from two types of prismatic planes of InGaN Hisashi Kanie, Kenichi Akashi, Hidemi Tumuki (Tokyo University of Science) ED2008-171 CPM2008-120 LQE2008-115 |
InGaN crystals yielding blue cathodoluminescence (CL) were grown by the nitridation of the mixture of GaN crystals with ... [more] | ED2008-171 CPM2008-120 LQE2008-115 pp.93-96 |
| LQE, ED, CPM | 2008-11-28 10:15 |
Aichi | Nagoya Institute of Technology | Theroretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates Atsushi Yamaguchi (Kanazawa Inst. of Technology) ED2008-172 CPM2008-121 LQE2008-116 |
Polarization properties in InGaN quantum wells on non-C AlInGaN alloy substrates are theoretically investigated. It is s... [more] | ED2008-172 CPM2008-121 LQE2008-116 pp.97-102 |
| LQE, ED, CPM | 2008-11-28 13:30 |
Aichi | Nagoya Institute of Technology | Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC) ED2008-177 CPM2008-126 LQE2008-121 |
We have fabricated AlGaN/GaN HEMTs with a thin p-InGaN cap layer and measured I-V characteristics of the devices. For th... [more] | ED2008-177 CPM2008-126 LQE2008-121 pp.125-130 |
| CPM, ED, LQE | 2007-10-11 13:30 |
Fukui | Fukui Univ. | Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn Akio Kaneta (Kyoto Univ./JST), Akinobu Kanai (Kyoto Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ./JST), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) ED2007-157 CPM2007-83 LQE2007-58 |
The micro photoluminescence (PL) and micro time-resolved PL spectroscopy have been performed on a single InGaN/GaN nanoc... [more] | ED2007-157 CPM2007-83 LQE2007-58 pp.7-12 |
| CPM, ED, LQE | 2007-10-12 11:40 |
Fukui | Fukui Univ. | Theoretical study on high-frequency performance of AlInN/InGaN heterojunction FETs Kazuki Kodama, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) ED2007-171 CPM2007-97 LQE2007-72 |
High-frequency performance of AlInN/InGaN heterojunction FETs has been theoretically studied. Analyses were made using 2... [more] | ED2007-171 CPM2007-97 LQE2007-72 pp.77-80 |
| CPM, ED, LQE | 2007-10-12 15:05 |
Fukui | Fukui Univ. | Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate Yoshiki Nakajima, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki (Nagoya Univ.) ED2007-176 CPM2007-102 LQE2007-77 |
Hetero-epitaxial growth of an InGaN thin film was attempted with MOVPE on a GaN facet structure. The GaN trapezoidal str... [more] | ED2007-176 CPM2007-102 LQE2007-77 pp.97-102 |
| ED, CPM, LQE | 2006-10-06 09:55 |
Kyoto | Growth and optical properties of InGaN/GaN quantum wells on semipolar {11-22} GaN substrates Masaya Ueda, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia) |
(To be available after the conference date) [more] | ED2006-162 CPM2006-99 LQE2006-66 pp.57-61 |
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| ED, CPM, LQE | 2006-10-06 11:50 |
Kyoto | Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime Kotaro Zaima (Toshiba), Tetsuo Narita (Nagoya Univ.), Shinji Saito, Koichi Tachibana, Hajime Nago, Genichi Hatakoshi, Shinya Nunoue (Toshiba) |
The internal quantum efficiency of GaN-based light emitting diodes (LEDs) was analyzed by investigating electroluminesce... [more] | ED2006-166 CPM2006-103 LQE2006-70 pp.79-82 |
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| LQE | 2006-06-02 18:00 |
Fukui | University of Fukui | Reduction of the Intensity Noise by Electric Positive and Negative Feedback in Blue-Violet InGaN Semiconductor Lasers Eiji Teraoka, Kazushi Saeki, Minoru Yamada, Yuji Kuwamura (Kanazawa Univ.) |
Blue-Violet InGaN semiconductor lasers have been developed to be light sources in the high density optical disk systems.... [more] | LQE2006-18 pp.87-90 |
| LQE | 2005-05-19 10:55 |
Ishikawa | Kanazawa Univ. | Noise characteristics and noise reduction in InGaN blue-violet semiconductor lasers
-- Quantum noise and feedback noise as well as superposition of high frequency current -- Kenjiro Matsuoka, Kazushi Saeki, Eiji Teraoka, Yuji Kuwamura, Minoru Yamada (Kanazawa Univ.) |
InGaN semiconductor lasers are going to be used in HD DVD and Blue-ray Disk which is called the next generation optical ... [more] | LQE2005-3 pp.9-12 |
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