Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, WPT |
2022-04-15 15:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
A High Efficiency 3.6-4.0 GHz Envelope-Tracking Power Amplifier Using GaN Soft-Switching Buck-Converter Yuji Komatsuzaki (Mitsubishi Electric), Sandro Lanfranco, Tapio Kolmonen, Olli Piirainen, Jarno K. Tanskanen (Nokia Bell Labs), Shuichi Sakata (Mitsubishi Electric), Rui Ma (MERL), Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric), Peter Asbeck (UCSD) WPT2022-11 MW2022-11 |
We report a high efficiency sub-6GHz wideband Envelope-Tracking Power Amplifier (ET-PA) including an envelope amplifier ... [more] |
WPT2022-11 MW2022-11 pp.40-45 |
ED, MW |
2022-01-27 13:40 |
Online |
Online |
Effects of Load Impedances at Third Order Intermodulation Tones Eigo Kuwata, Yutaro Yamaguchi, Masaomi Tsuru (Mitsubishi Electric), Johannes Benedikt (Cardiff University) ED2021-63 MW2021-105 |
This paper reports on new multitone active loadpull measurements at the specific frequencies of third order intermodulat... [more] |
ED2021-63 MW2021-105 pp.7-11 |
ED, MW |
2022-01-27 15:30 |
Online |
Online |
[Invited Lecture]
A 28GHz-Band GaN HEMT Doherty Amplifier MMIC Based on Dual-Power-Level Design Technique Ryo Ishikawa, Takuya Seshimo, Yoichiro Takayama, Kazuhiko Honjo (UEC) ED2021-67 MW2021-109 |
In the 5G wireless communication system, a quasi-millimeter wave band such as the 28 GHz band is also used. Doherty powe... [more] |
ED2021-67 MW2021-109 pp.28-31 |
ED, MW |
2022-01-27 16:05 |
Online |
Online |
[Invited Talk]
Wideband Load Modulated GaN Power Amplifiers for Wireless Base-Stations Shuichi Sakata, Yuji Komatsuzaki, Kento Saiki, Koji Yamanaka, Masaomi Tsuru (Mitsubishi Electric) ED2021-68 MW2021-110 |
Recently, 5G commercial services which have features of high speed, large capacity and multi-connectivity have rolled ou... [more] |
ED2021-68 MW2021-110 pp.32-37 |
RCS |
2021-04-22 10:30 |
Online |
Online |
Digital Predistorter Using Twin-Nonlinear Two-Box Model for Digitally Assisted Ultra-Wideband GaN Amplifier Ao Yamashita, Yuji Komatsuzaki, Hiroto Sakaki, Nobuhiko Ando, Hideyuki Nakamizo (Mitsubishi Electric) RCS2021-1 |
The authors have been proposing high efficiency digitally assisted ultra-wideband GaN amplifier for mobile base station ... [more] |
RCS2021-1 pp.1-5 |
EMT, MW, OPE, EST, MWP, THz, IEE-EMT [detail] |
2020-07-17 14:15 |
Online |
Online |
Study on Series Connected Harmonic-Tuned GaN HEMT Doherty Power Amplifier for Directly Exciting a Loop Antenna of OAM communication with Balanced Mode Masahiro Nakada, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) EMT2020-24 MW2020-33 OPE2020-19 EST2020-24 MWP2020-24 |
A series-connected harmonic-tuned GaN HEMT Doherty amplifier (DA) has been developed for directly exciting a loop antenn... [more] |
EMT2020-24 MW2020-33 OPE2020-19 EST2020-24 MWP2020-24 pp.101-106 |
MW, WPT |
2020-04-23 16:30 |
Online |
Online |
Integrated power amplifier design with antenna Asako Suzuki (Nagoya Univ.), Shunya Ban, Takase Oshima, Hiroshi Hirayama (NITech), Shinji Hara (Nagoya Univ.) WPT2020-10 MW2020-10 |
We propose a new method to improve the transmission efficiency of wireless power transmission system using microwaves. I... [more] |
WPT2020-10 MW2020-10 pp.51-54 |
MW |
2019-11-14 14:45 |
Okinawa |
Minami Daido Villa. Tamokuteki Koryu Center |
A Sturdy about Efficient Design and Optimization of Bias Condition for K-Band GaN Power Amplifier Takuma Torii, Masatake Hangai, Ryuji Inagaki, Shintaro Shinjo (Mitsubishi Electric) MW2019-104 |
Power Amplifier is required to have both high efficiency and linearity in satellite communication. This paper presents t... [more] |
MW2019-104 pp.25-28 |
MW |
2019-11-14 15:10 |
Okinawa |
Minami Daido Villa. Tamokuteki Koryu Center |
A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network Keigo Nakatani, Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo (MitsubishiElectric) MW2019-105 |
This paper has reported a Ka-band 15.5W power amplifier Monolithic Microwave Integrated Circuit (MMIC) using 0.15m Gall... [more] |
MW2019-105 pp.29-34 |
MW |
2019-11-14 15:35 |
Okinawa |
Minami Daido Villa. Tamokuteki Koryu Center |
High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization including Harmonic Treatment Takuya Seshimo, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2019-106 |
Further high efficiency and high functionality of power amplifier are required for the next generation wireless communic... [more] |
MW2019-106 pp.35-39 |
MW |
2019-11-14 16:00 |
Okinawa |
Minami Daido Villa. Tamokuteki Koryu Center |
High Efficiency Doherty Amplifier Using T-Shaped Stabs with Spurius Suppression and Impedance Conversion Function Yuki Takagi, Naoki Hasegawa, Yoshichika Ota (SB), Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2019-107 |
In recent years, various types of wireless stations such as a base station used on quasi-millimeter wave band have been ... [more] |
MW2019-107 pp.41-46 |
MW |
2019-11-14 17:05 |
Okinawa |
Minami Daido Villa. Tamokuteki Koryu Center |
Multifunctional CRLH Transmission Line Stubs for Compact Class-E/Inverse-Class-E Power Amplifiers Hirotaka Asami, Shinichi Tanaka (Shibaura Inst. of Tech.) MW2019-109 |
This report presents CRLH transmission line (TL) stubs for realizing compact high-efficiency class-E / inverse class-E p... [more] |
MW2019-109 pp.53-58 |
EMCJ, MW, EST, IEE-EMC [detail] |
2019-10-24 10:55 |
Miyagi |
Tohoku Gakuin University(Conf. Room 2, Eng. Bldg. 1) |
Efficiency Enhancement of GaN Doherty Power Amplifier at Large Power Back-Off with Virtual Short Stub Technique Satoru Honda, Shuichi Sakata, Yuji Komatsuzaki, Shintaro Shinjo (Mitsubishi Electric) EMCJ2019-40 MW2019-69 EST2019-48 |
We propose a new efficiency enhancement technique of Doherty power amplifiers (DPAs) using virtual short stub. In this t... [more] |
EMCJ2019-40 MW2019-69 EST2019-48 pp.21-25 |
MW, AP (Joint) |
2019-09-20 14:35 |
Kanagawa |
JAXA (Sagamihara) |
[Invited Talk]
Onboard GaN high-power amplifier for 50-kg-class ultra-small deep-space probe "PROCYON" Yuta Kobayashi (JAXA), Satoshi Yoshida (Kagoshima Univ.), Shigeo Kawasaki (JAXA) MW2019-61 |
Recently, a lot of nano- or micro-satellites have been developed and utilized for various low-earth-orbit missions. PROC... [more] |
MW2019-61 p.35 |
MW, ED |
2019-01-17 15:00 |
Tokyo |
Hitachi, Central Research Lab. |
Pit-Assisted Ohmic Contact Technology for InAlGaN/GaN HEMTs Yusuke Kumazaki, Shiro Ozaki, Yuichi Minoura, Kozo Makiyama, Toshihiro Ooki, Naoya Okamoto, Norikazu Nakamura (FUJITSU LABORATORIES LTD.) ED2018-77 MW2018-144 |
Low contact resistance was realized in InAlGaN/GaN HEMTs by the introduction of pit structures on the metal/InAlGaN inte... [more] |
ED2018-77 MW2018-144 pp.51-54 |
MW |
2018-11-15 11:15 |
Nagasaki |
Fukue Cultural Hall |
Low distortion GaN Power Amplifier with adaptive gate bias control Takuma Torii, Masatake Hangai, Ryuji Inagaki, Shintaro Shinjo (Mitsubishi electric) MW2018-95 |
In order to expand communication capability, high PAPR (Peak to Average Power Ratio) signal is used. Therefore power amp... [more] |
MW2018-95 pp.19-23 |
EST, MW, EMCJ, IEE-EMC [detail] |
2018-10-18 16:35 |
Aomori |
Hachinohe Chamber of Commerce and Industry(Hachinohe city, Aomori) |
GaN HEMT Darlington Power Amplifier with Individual Bias Adjustment for High-Efficiency and Low-Distortion Characteristics Atsushi Kitamura, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) EMCJ2018-45 MW2018-81 EST2018-67 |
Multi-transistor configurations are widely applied for improving the performance of transistor amplifiers. In the multi-... [more] |
EMCJ2018-45 MW2018-81 EST2018-67 pp.71-75 |
EST, MW, OPE, MWP, EMT, IEE-EMT, THz [detail] |
2018-07-20 13:00 |
Hokkaido |
|
2.45 GHz ISM-Band 450W High Efficiency GaN Pallet Amplifier for Microwave Heating Takumi Sugitani, Kazuhiro Iyomasa, Masatake Hangai, Yoshifumi Kawamura, Jun Nishihara, Shintaro Shinjo (Mitsubishi Electric Corp.) EMT2018-39 MW2018-54 OPE2018-42 EST2018-37 MWP2018-38 |
In this paper, 2.45 GHz ISM-Band high power high efficiency GaN pallet amplifier for Microwave Heating is presented. To ... [more] |
EMT2018-39 MW2018-54 OPE2018-42 EST2018-37 MWP2018-38 pp.175-178 |
MW, WPT |
2018-04-27 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Building |
S-band Tx Module with Cu Pillar Interconnection Si/GaN 3D Chip Embedding Substrate Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, Hiroshi Fukumoto (Mitsubishi Electric Corp.) WPT2018-5 MW2018-5 |
A SiGe chip and GaN chip packaged Tx module in S-band is represented. SiGe and GaN with Redistribution Layer (RDL) are i... [more] |
WPT2018-5 MW2018-5 pp.19-23 |
ED, MW |
2018-01-26 09:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
UHF-C Band Broadband Power Amplifier with Series Connected SiGe HBT and GaN HEMT Eigo Kuwata, Kengo Kawasaki, Daisuke Tsunami, Kazuhiro Maeda, Koji Yamanaka (MELCO) ED2017-98 MW2017-167 |
This paper reports on a multi chips amplifier consists of Gallium Nitride High Electron Mobility Transistor (GaN HEMT) a... [more] |
ED2017-98 MW2017-167 pp.25-29 |