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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD | 2011-04-19 16:15 |
Hyogo | Kobe University Takigawa Memorial Hall | Analyses on Co-relation between Low and High Resistance States in ReRAM Consisting of Binary-Transition-Metal-Oxides Hayato Tanaka (Tottori Univ), Kentaro Kinoshita, Satoru Kishida (Tottori Univ./TEDREC)  ICD2011-20 |
Resistive Random Access Memory (ReRAM) is attracting attention as a non-volatile memory for the next generation. The con... [more] | ICD2011-20 pp.111-116 |
| MW, ED | 2011-01-14 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2010-184 MW2010-144 |
We propose a novel structure to boost the breakdown voltages of AlGaN/GaN hetero junction field effect transistors (HFET... [more] | ED2010-184 MW2010-144 pp.51-54 |
| MW, ED | 2011-01-14 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN/GaN HFETs using highly C-doped layers on Si substrate Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato (APD) ED2010-185 MW2010-145 |
In this paper, AlGaN/GaN/HFET devices on Si substrates were fabricated, and the device characteristics were examined. In... [more] | ED2010-185 MW2010-145 pp.55-59 |
| EMCJ (2nd) |
2010-05-28 14:00 |
Miyagi | Cyberscience Center, Tohoku University | Measurement of the radiated electromagnetic filed intensity using spherical electrodes and a horn antenna Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (NIT) |
The micro-gap discharge as the low voltage ESD shows very fast transition duration of about 32 ps or less. Besides, brea... [more] | |
| EMCJ, IEE-EMC | 2009-12-18 14:15 |
Gifu | NIFS | Study on Radiated Electromagnetic Field Intensity due to Micro Gap Discharge as the low voltage ESD. Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (Nagoya Inst. of Tech.) |
The breakdown field strength and radiated electromagnetic field intensity due to micro gap discharge were examined in ex... [more] | EMCJ2009-95 pp.59-64 |
| ED, LQE, CPM | 2009-11-20 15:25 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Development of GaN Schottky Diodes for Microwave Wireless Ubiquitous Power Distribution Kensuke Takahashi, Jin-Ping Ao (Tokushima Univ.), Naoki Shinohara (Kyoto Univ.), Naoki Niwa (Kajima Corp.), Teruo Fujiwara (Sho Engineering Corp.), Yasuo Ohno (Tokushima Univ.) ED2009-158 CPM2009-132 LQE2009-137 |
For microwave power rectification circuits（rectenna）, high power, high conversion efficiency and compact size rectifying... [more] | ED2009-158 CPM2009-132 LQE2009-137 pp.145-150 |
| AP | 2009-09-04 14:50 |
Aomori | Hachinohe Inst. of Tech. | Experimental Study of Radiated Electromagnetic Field Intensity due to Micro Gap Discharge Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (Nagoya Inst. of Tech.) AP2009-100 |
The breakdown field strength and radiated electromagnetic field intensity due to micro gap discharge were examined in ex... [more] | AP2009-100 pp.121-124 |
| ED | 2009-06-12 11:25 |
Tokyo | Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48 |
In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance betw... [more] | ED2009-48 pp.63-67 |
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| EMD, EMCJ | 2009-05-22 14:15 |
Tokyo | Kanda camupus, Nippon Institute of Technology | Relation Between Radiated Electromagnetic Field Intensity and Electrode Condition due to Micro Gap Discharge Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi (Tohoku Gakuin Univ.), Osamu Fujiwara (Nagoya Inst. of Tech.) EMCJ2009-17 EMD2009-9 |
he relationship between breakdown field strength and radiated electromagnetic field intensity was examined in experiment... [more] | EMCJ2009-17 EMD2009-9 pp.45-48 |
| MW, ED | 2009-01-14 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | GaN-based Natural Super Junction Diodes Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167 |
We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model i... [more] | ED2008-202 MW2008-167 pp.23-27 |
| MW, ED | 2009-01-16 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.) ED2008-221 MW2008-186 |
We reported on a technology to improve the three-terminal breakdown voltage of a GaN high electron mobility transistor (... [more] | ED2008-221 MW2008-186 pp.129-133 |
| LQE, ED, CPM | 2008-11-28 11:15 |
Aichi | Nagoya Institute of Technology | Optimum Design of AlGaN/GaN HEMTs with Field Plate Ryosuke Sakai, Tomotaka Okai, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) ED2008-174 CPM2008-123 LQE2008-118 |
We have analyzed the electric field distribution for AlGaN/GaN HEMTs with various types of graded field plates using an ... [more] | ED2008-174 CPM2008-123 LQE2008-118 pp.109-114 |
| EMCJ, EMD | 2008-07-18 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Experimental Study on Radiated Electromagnetic Field Strength due to Micro Gap Discharge Below 1kV Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi, Akira Haga (Tohoku Gakuin Univ.), Osamu Fujiwara (NIT) EMCJ2008-45 EMD2008-27 |
Abstract Relationship between breakdown field strength and radiated electromagnetic field strength was examined in expe... [more] | EMCJ2008-45 EMD2008-27 pp.27-30 |
| SDM, ED | 2008-07-09 11:40 |
Hokkaido | Kaderu２・７ | [Invited Talk]
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60 |
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] | ED2008-41 SDM2008-60 pp.9-14 |
| SDM, ED | 2008-07-11 10:50 |
Hokkaido | Kaderu２・７ | High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] | ED2008-73 SDM2008-92 pp.177-181 |
| CPM, ED, SDM | 2008-05-16 10:50 |
Aichi | Nagoya Institute of Technology | On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET Using p-GaN Gate Contact Ryohei Nega, Katsutoshi Mizuno, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2008-13 CPM2008-21 SDM2008-33 |
This paper reports normally-off mode nitride-based field-effect transistor using p-type gate contact. In order to realiz... [more] | ED2008-13 CPM2008-21 SDM2008-33 pp.61-66 |
| ED, MW | 2008-01-16 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 10400V Blocking Voltage AlGaN/GaN Power HFET Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] | ED2007-213 MW2007-144 pp.39-43 |
| CPM, ED, LQE | 2007-10-12 09:00 |
Fukui | Fukui Univ. | Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs Ryosuke Sakai, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Fniv. of Fukui) ED2007-165 CPM2007-91 LQE2007-66 |
We have theoretically analyzed the electric field distribution for multi-step and graded Field Plate (FP) AlGaN/GaN HEMT... [more] | ED2007-165 CPM2007-91 LQE2007-66 pp.47-52 |
| ED | 2007-06-15 13:25 |
Toyama | Toyama Univ. | A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance Hirotaka Amasuga, Akira Inoue, Seiki Goto, Tetsuo Kunii, Yoshitsugu Yamamoto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric) ED2007-32 |
A new GaAs pHEMT structure, which has achieved both high power density and high breakdown voltage for millimeter-wave am... [more] | ED2007-32 pp.7-11 |
| MW, ED | 2007-01-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] | ED2006-235 MW2006-188 pp.193-197 |
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