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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2024-01-26 10:30 |
Kyoto |
(Primary: On-site, Secondary: Online) |
[Poster Presentation]
A unified approach of ferroelectric nematic liquid crystal molecular alignment based on the surface polar anchoring model Sakunosuke Abe, Yosei Shibata, Munehiro Kimura, Tadashi Akahane (NUT) |
[more] |
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EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] |
2014-01-25 11:22 |
Niigata |
Niigata University |
Evaluation of flexoelectric coefficients by using the SOITE method Taiki Watanabe (Nagaoka Univ. of Tech.), Taiju Takahashi (Kougakuin Univ.), Munehiro Kimura, Tadashi Akahane (Nagaoka Univ. of Tech.) EID2013-31 |
It is well known that the electric polarization arises from the bend or spray distortion of the orientation. This phenom... [more] |
EID2013-31 pp.125-128 |
CPM |
2009-10-30 09:00 |
Toyama |
Toyama Prefectural University |
Structural evaluation of Ge, SiC nanodots formed on Si based on hemispherical-dot model Tomoyoshi Kuroda, Takashi Otani, Ariyuki Kato, Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-96 |
Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on Si(001) substrates using monomethy... [more] |
CPM2009-96 pp.31-36 |
CPM |
2009-08-11 11:40 |
Aomori |
Hirosaki Univ. |
Epitaxial growth of gallium nitride on Si by hot-mesh CVD method with intermittent gas supplies. Takeshi Saitou, Kazuki Nagata (Nagaoka Univ. of Tech.), Maki Suemitsu, Tetsuo Endoh (RIEC Tohoku Univ.), Takashi Ito (CIR Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-45 |
Hot-mesh CVD with various gas supply modes for the epitaxial growth of gallium nitride (GaN) on Si was investigated for ... [more] |
CPM2009-45 pp.61-66 |
CPM |
2008-10-30 13:25 |
Niigata |
Niigata Univ. |
Epitaxial growth of III-V nitride semiconductor films by pulse-mode hot-mesh CVD Yasuaki Komae, Takeshi Saitou (Nagaoka Univ of Tech), Maki Suemitsu, Takashi Ito, Tetsuo Endoh (CIR of Tohoku Univ), Hideki Nakazawa (FST of Hirosaki Univ), Yuzuru Narita (Kyushu Inst. of Tech.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ of Tech) CPM2008-76 |
Intermittent gas supplies in hot-mesh CVD for the epitaxial growth of gallium nitride (GaN) were investigated for the im... [more] |
CPM2008-76 pp.7-12 |
CPM |
2008-10-30 13:50 |
Niigata |
Niigata Univ. |
Optical properties of Ge nanodots capped by wide gap semiconductors Haruki Suto, Tomoyoshi Kuroda, Ariyuki Kato, Hiroshi Nishiyama, Yasunobu Inoue, Tadashi Akahane, Masasuke Takata, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2008-77 |
Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on a Si(001) substrate using monometh... [more] |
CPM2008-77 pp.13-18 |
CPM |
2008-10-30 14:30 |
Niigata |
Niigata Univ. |
Lowering the resistivity of Al dope ZnO films deposited by a magnetron sputtering with a third electrode Yutaka Oshima, Yuichiro Makino (nagaoka Univ. of Tech.), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech,), Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (nagaoka Univ. of Tech.) CPM2008-78 |
Improvement of the uniformity in the resistivity of Al doped ZnO (AZO) films has been obtained using a radio frequency (... [more] |
CPM2008-78 pp.19-22 |
CPM |
2007-11-16 14:20 |
Niigata |
Nagaoka University of Technology |
Evaluation of the uniformity in the properties of ZnO transparent conductive films grown by rf magnetron sputtering with a grid electrode Akira Asano (NUT), Hironori Katagiri (NNCT), Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (NUT) CPM2007-108 |
We have investigated the deposition of Al doped ZnO (AZO) films using a radio frequency (rf) magnetron sputtering appara... [more] |
CPM2007-108 pp.19-22 |
CPM |
2007-11-17 09:00 |
Niigata |
Nagaoka University of Technology |
Growth of GaN by hot-mesh CVD
-- Effect of Ru coated W mesh -- Yusuke Fukada, Kazuki Abe, Yuichiro Kuroki (Nagaoka Univ. Tech.), Maki Suemitsu, Takashi Ito (CIR. Tohoku Univ.), Yuzuru Narita (Kyusyu Inst. Tech.), Tetsuo Endoh (RIEC, Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. Tech.) CPM2007-115 |
[more] |
CPM2007-115 pp.55-58 |
CPM |
2007-11-17 09:25 |
Niigata |
Nagaoka University of Technology |
Formation and control of Ge, SiC nanodots on Si(001)-2x1 surface using monomethylgermane Tomoaki Ogiwara, Haruki Suto, Kanji Yasui, Tadashi Akahane, Masasuke Takata (NUT) CPM2007-116 |
Formation of high-density nano-dots using monomethylgermane (MMGe) on Si (001)-$2^{o}$off surface was investigated. By t... [more] |
CPM2007-116 pp.59-64 |
CPM |
2007-11-17 09:50 |
Niigata |
Nagaoka University of Technology |
Preparation SiC/SOI structure substrate using Hot-Mesh CVD technique,and dependence of top Si layer thickness Yuichiro Makino, Hitoshi Miura, Hiroshi Nishiyama, Kanji Yasui, Masasuke Takata, Yasunobu Inoue, Tadashi Akahane (Nagaoka Univ. of Tech.) CPM2007-117 |
Epitaxial growth of 3C-SiC films on SOI substrates was investigated by hot-mesh (HM-) CVD method using monomethylsilane ... [more] |
CPM2007-117 pp.65-68 |
CPM |
2006-11-10 09:50 |
Ishikawa |
Kanazawa Univ. |
Formation of high density nanodots aiming for Ge embedded SiC Tetsushi Kanemaru, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. Tech.) |
[more] |
CPM2006-124 pp.65-70 |
CPM |
2006-08-07 16:15 |
Iwate |
Iwate Univ. |
Low temperature epitaxial growth of 3C-SiC on SOI substrate using Hot-Mesh CVD method Hitoshi Miura, Taishi Kurimoto, Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (Nagaoka Univ. of Tech.) |
[more] |
CPM2006-46 pp.31-36 |
CPM |
2006-08-07 16:40 |
Iwate |
Iwate Univ. |
Growth of GaN on SiC/Si(111) substrates using AlN buffer layer by hot-mesh CVD method Kazuyuki Tamura, Yusuke Fukada, Yuichiro Kuroki, Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. of Tech) |
[more] |
CPM2006-47 pp.37-41 |
CPM |
2005-11-11 14:45 |
Fukui |
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Changes of surface structures during reactions of monomethylgermane on Si(001)
-- Toward to fabrication of Ge embedded in SiC structure -- Masayuki Harashima, Tetsushi Kanemaru, Ariyuki Kato, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. of Technol.) |
Initial stage of surface reactions between monomethylgermane (MMGe:
GeH$_3$CH$_3$) and Si(001) surfaces has been analy... [more] |
CPM2005-155 pp.19-24 |
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