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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2010-11-12
11:15		 Osaka   Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates
Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113		 A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] ED2010-157 CPM2010-123 LQE2010-113
pp.67-70
CPM, ED, LQE 2007-10-12
09:50		 Fukui Fukui Univ. Low leakage current ITO schottky electrode for AlGaN/GaN HEMT
Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices) ED2007-167 CPM2007-93 LQE2007-68		 AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] ED2007-167 CPM2007-93 LQE2007-68
pp.57-61
ED, CPM, LQE 2006-10-05
13:25		 Kyoto   Improvement of Breakdown Voltage of AlGaN/GaN HEMT
Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna) 		AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] ED2006-153 CPM2006-90 LQE2006-57
pp.7-12
LQE, ED, CPM 2005-10-13
14:30		 Shiga Ritsumeikan Univ. Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications
Ken Nakata, Takeshi Kawasaki, Seiji Yaegashi (Eudyna Device Inc.) 		AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] ED2005-129 CPM2005-116 LQE2005-56
pp.51-56
 Results 1 - 4 of 4  /   
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