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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2023-08-01 10:05 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Evaluation of the Physical Properties of Reactive sputtered Ti or V-based MAX alloy thin film Kazuki Ueda, Kazunobu Wkamatsu, Takeyasu Saito, Naoki Okamoto (Osaka Metropolitan Univ.)  CPM2023-20 |
Currently, Cu is the main wiring material in leading-edge semiconductor devices. However, since Cu easily diffuses into ... [more] | CPM2023-20 pp.33-35 |
| EST, MW, EMT, OPE, MWPTHz, IEE-EMT [detail] | 2023-07-20 11:25 |
Hokkaido | Muroran Institute of Technology (Primary: On-site, Secondary: Online) |
Investigation of phase-change material high-frequency devices by using heat transfer simulation Taku Sato, Koji Yamashita, Hideyuki Okabe, Masayuki Kimishima (Advantest Laboratories Ltd.) EMT2023-14 MW2023-32 OPE2023-14 EST2023-14 MWPTHz2023-10 |
ON-OFF switching of phase-change material high-frequency switching devices is performed by reversibly changing the phase... [more] | EMT2023-14 MW2023-32 OPE2023-14 EST2023-14 MWPTHz2023-10 pp.27-31 |
| SDM | 2023-01-30 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
Non-volatile Mid-infrared Phase Change Material Optical Phase Shifter Based on Ge2Sb2Te3S2 Yuto Miyatake (Univ. of Tokyo), Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano (AIST), Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo) SDM2022-83 |
An optical phase shifter based on phase-change materials (PCMs) is a promising building block of quantum photonic integr... [more] | SDM2022-83 pp.17-20 |
| MRIS, ITE-MMS | 2022-12-08 15:55 |
Ehime | Ehime Univ. + Online (Primary: On-site, Secondary: Online) |
Enhancement of magnetic relaxation constant by phase control of CoFeB/Sb2Te3 Misako Morota, Yuta Saito, Shogo Hatayama, Noriyuki Uchida (AIST) MRIS2022-23 |
Chalcogenide materials such as Sb_2Te_3 and Bi_2Te_3 are known as phase-change materials, which can reversely change the... [more] | MRIS2022-23 pp.28-31 |
| US | 2021-02-22 13:50 |
Online | Online | Investigation of ultrasound emitter diameter and suppression of grating lobe of an airborne ultrasound phased array Kyosuke Shimizu, Ayumu Osumi, Youichi Ito (Nihon Univ.) US2020-68 |
There is a scanning laser source technique (SLS) for performing high-speed measurement by scanning a laser excitation s... [more] |
US2020-68 pp.10-13 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 15:35 |
Online | Online | Phase Change Random Access memory using Cu2GeTe3 Shihori Akane (Ryukoku Univ), Isao Horiuchi (KOA Corp), Mutsumi Kimura (Ryukoku Univ) EID2020-13 SDM2020-47 |
We are conducting research on Phase Change Random Access Memory (PCRAM) using “Cu2GeTe3: Copper-Germanium-Tellurium (CGT... [more] | EID2020-13 SDM2020-47 pp.50-53 |
| SDM | 2018-10-17 16:35 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States Shogo Hatayama, Yuji Sutou, Daisuke Ando, Junichi Koike (Tohoku Univ.) SDM2018-56 |
Phase change random access memory (PCRAM) has attracted much attention as one of next generation non-volatile memory. Ge... [more] | SDM2018-56 pp.21-26 |
| OME | 2017-11-17 15:15 |
Osaka | Osaka Univ. Nakanoshima Center | Optimized condition of vapor phase polymerization of EDOT for thermoelectric conversion Mana Hirai, Yasuko Koshiba, Shohei Horike (Kobe Univ.), Masahiro Morimoto (Kobe Univ./Toyama Univ.), Masahiro Misaki (Kobe Univ./Kinki Univ. tech. col.), Tatsuya Fukushima, Kenji Ishida (Kobe Univ.) OME2017-31 |
Poly(3,4-ethylenedioxythiophene) (PEDOT) were synthesized via vapor-phase polymerization (VPP) of the 3,4-ethylenedioxyt... [more] | OME2017-31 pp.21-26 |
| CCS | 2017-03-10 11:30 |
Tokyo | ELSI, TITECH | [Invited Talk]
Nanooptics- and fluidics-based physical implementation of natural intelligence Toshiharu Saiki (Keio Univ.) CCS2016-48 |
We attempt to implement natural intelligence into nanoparticle systems that involves optical coherence, fluidic interact... [more] | CCS2016-48 pp.19-24 |
| MRIS, ITE-MMS, IEE-MAG | 2016-03-04 13:35 |
Aichi | Nagoya Univ. | Investigation of mechanism of crystalline-amorphous periodic structure formation in GeTe by pulsed laser irradiation Yusuke Morimoto, Ryota Akimoto (Keio Univ.), Masashi Kuwahara (AIST), Toshiharu Saiki (Keio Univ.) MR2015-35 |
When a GeTe film, one of phase change materials used for rewritable optical discs, has changed from crystalline to amorp... [more] | MR2015-35 pp.33-36 |
| CPM | 2014-10-08 13:55 |
Tokyo | Development of organic phase change materials for optical data storage Hideyuki Kihara, Masaru Yoshida (AIST) CPM2014-93 |
We synthesized new organic compound by introducing appropriate substituents to anthracene and found that the obtained an... [more] | CPM2014-93 pp.9-12 |
|
| MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] | 2014-01-24 15:30 |
Kyoto | Doshisha University | Operating characteristic of ultra-small optical switch using phase-change material with Si wire waveguide Takumi Moriyama (Keio Univ.), Hitoshi Kawashima, Masashi Kuwahara, Xiaomin Wang (AIST), Hiroyuki Tsuda (Keio Univ.) PN2013-79 OPE2013-193 LQE2013-179 EST2013-128 MWP2013-99 |
Recently, internet traffic is increasing and a high performance optical switch is required for optical network nodes. We... [more] | PN2013-79 OPE2013-193 LQE2013-179 EST2013-128 MWP2013-99 pp.287-292 |
| RECONF | 2013-09-18 17:25 |
Ishikawa | Japan Advanced Institute of Science and Technology | Nonvolatile reconfigurable device development platform using a phase change material Takumi Michida, Kazuya Tanigawa, Tetsuo Hironaka (Hiroshima City Univ.), Kenichi Shimomai, Takashi Ishiguro (TAIYO YUDEN) RECONF2013-25 |
We have studied a development technique of nonvolatile reconfigurable device MPLD using the phase change memory. The de... [more] |
RECONF2013-25 pp.31-36 |
| OME, SDM | 2013-04-26 09:10 |
Kagoshima | Yakusima Environmental Culture Village Center | [Invited Talk]
Fabrication and Analysis of Organic LEDs and Solar Cells Hironori Kaji (Kyoto Univ.) SDM2013-9 OME2013-9 |
1) On bulk heterojunction organic solar cells (BHJ OSCs), it is found that thermal annealing treatment is an easy and in... [more] | SDM2013-9 OME2013-9 pp.43-48 |
| ICD, SDM | 2012-08-02 15:55 |
Hokkaido | Sapporo Center for Gender Equality, Sapporo, Hokkaido | Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes Masaharu Kinoshita, Yoshitaka Sasago, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Yoshihisa Fujisaki, Shuichi Kusaba, Tadao Morimoto, Takashi Takahama, Toshiyuki Mine, Akio Shima, Yoshiki Yonamoto, Takashi Kobayashi (Hitachi) SDM2012-74 ICD2012-42 |
A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity stora... [more] | SDM2012-74 ICD2012-42 pp.59-63 |
| SDM | 2012-03-05 10:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Keynote Address]
Development of Ultra Low Voltage Devices utilizing BEOL Process Shin'ichiro Kimura (LEAP) SDM2011-176 |
Resistive-change non-volatile devices, in which variable resistance materials are embedded during Back-end of Line proce... [more] | SDM2011-176 pp.1-5 |
| SDM | 2011-11-10 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117 |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] | SDM2011-117 pp.11-15 |
| SDM | 2011-11-11 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design Technology of stacked Type Chain PRAM Sho Kato, Shigeyoshi Watanabe (SIT) SDM2011-127 |
Stacked type chain PRAM which enables to realize lower cost than NAND flash memory has been newly proposed. Cell structu... [more] | SDM2011-127 pp.69-74 |
| SDM, ICD | 2011-08-26 09:50 |
Toyama | Toyama kenminkaikan | Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-85 ICD2011-53 |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] | SDM2011-85 ICD2011-53 pp.75-78 |
| ICD | 2011-04-18 15:20 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
Trend in Phase Change Memory and activity in TIA Norikatsu Takaura (LEAP) ICD2011-6 |
This paper reports on trend in phase change memory (PCM) and research activity in Tsukuba Innovation Arena (TIA) . We di... [more] | ICD2011-6 pp.33-36 |
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