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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 70  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-10-13
13:00
Miyagi Niche, Tohoku Univ. [Invited Talk] Defect Reduction in UV Nanoimprint Lithography
Toshiki ITO (Canon) SDM2023-54
Field-by-field type UV nanoimprint lithography equipped with on-demand inkjet dispense system has been developed, which ... [more] SDM2023-54
pp.1-6
HWS, VLD 2023-03-01
15:20
Okinawa
(Primary: On-site, Secondary: Online)
A fast SRAF optimization using Voronoi diagram and LUT based intensity evaluation
Sota Saito, Yu Horimoto, Atsushi Takahashi (Tokyo Tech), Yukihide Kohira (Univ. of Aizu), Chikaaki Kodama (KIOXIA) VLD2022-80 HWS2022-51
Recent advances in technology nodes have led to problems in optical lithography such as reduced fidelity of transferred ... [more] VLD2022-80 HWS2022-51
pp.43-48
HWS, VLD 2023-03-04
11:05
Okinawa
(Primary: On-site, Secondary: Online)
Clone Resistance of Artifact Metrics: Scanning Probe Lithography Based Clones
Naoki Yoshida, Akira Iwahashi (YNU), Hoga Morihisa, Junko Ohta, Kaoru Sumiya (AIST), Tsutomu Matsumoto (YNU) VLD2022-117 HWS2022-88
The nano-artifact metrics bases its security on the fact that nanometer-order three-dimensional structures (nanopatterns... [more] VLD2022-117 HWS2022-88
pp.245-250
CPM 2023-02-28
16:00
Tokyo Tokyo University of Technology
(Primary: On-site, Secondary: Online)
Study of atomic-layer-deposition TiO2 films for strong capacitive coupling of microdevices
Fumihiro Takada, Yoshinao Mizugaki, Hiroshi Shimada (UEC) CPM2022-106
In order to couple micro- and nano-electronic devices via capacitances strongly, dielectric materials of high relative d... [more] CPM2022-106
pp.78-81
VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] 2022-11-30
10:20
Kumamoto  
(Primary: On-site, Secondary: Online)
A fast SRAF optimization used LUT based point intensity calculation
Sota Saito, Atsushi Takahashi (Tokyo Tech) VLD2022-40 ICD2022-57 DC2022-56 RECONF2022-63
Recent advances in technology nodes have led to problems in optical lithography such as reduced fidelity of transferred ... [more] VLD2022-40 ICD2022-57 DC2022-56 RECONF2022-63
pp.121-126
VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] 2022-11-30
10:45
Kumamoto  
(Primary: On-site, Secondary: Online)
Mask Optimization Using Voronoi Partition and Iterative Improvement
Naoki Nonaka, Yukihide Kohira (Univ. of Aizu), Atsushi Takahashi (Tokyo Tech), Chikaaki Kodama (KIOXIA) VLD2022-41 ICD2022-58 DC2022-57 RECONF2022-64
To realize continuously scaling down technology node, progressing manufacturing process by optical lithography is requir... [more] VLD2022-41 ICD2022-58 DC2022-57 RECONF2022-64
pp.127-132
VLD, DC, RECONF, ICD, IPSJ-SLDM
(Joint) [detail]
2021-12-02
15:35
Online Online Mask Optimization Method Using Simulated Quantum Annealing
Yukihide Kohira, Haruki Nakayama, Naoki Nonaka (Univ. of Aizu), Tomomi Matsui, Atsushi Takahashi (Tokyo Tech), Chikaaki Kodama (KIOXIA Corporation) VLD2021-45 ICD2021-55 DC2021-51 RECONF2021-53
To realize continuously scaling down of technology node, progressing manufacturing process by optical lithography is req... [more] VLD2021-45 ICD2021-55 DC2021-51 RECONF2021-53
pp.162-167
HWS, VLD [detail] 2020-03-04
16:00
Okinawa Okinawa Ken Seinen Kaikan
(Cancelled but technical report was issued)
Pixel-based Mask Optimization with Lagrangian Relaxation and Boundary Flipping
Rina Azuma, Yukihide Kohira (Univ. of Aizu), Tomomi Matsui, Atsushi Takahashi (Tokyo Tech), Chikaaki Kodama (KIOXIA) VLD2019-105 HWS2019-78
Due to miniaturization of process technology, progressing manufacturing process by optical lithography is required. In r... [more] VLD2019-105 HWS2019-78
pp.65-70
HWS, VLD [detail] 2020-03-04
16:50
Okinawa Okinawa Ken Seinen Kaikan
(Cancelled but technical report was issued)
Additional Training Data Generation for Lithography Hotspot Detection by Modifying Existing Training Data
Gaku Kataoka, Masato Inagi, Shinobu Nagayama, Shin'ichi Wakabayashi (Hiroshima City Univ.) VLD2019-107 HWS2019-80
In lithography, a circuit pattern that is highly likely to cause an undesired open- and short-circuit after transfer is ... [more] VLD2019-107 HWS2019-80
pp.77-82
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2019-11-15
15:45
Ehime Ehime Prefecture Gender Equality Center Lithography Hotspot Detection Based on Feature Vectors Considering Wire Width and Distance
Gaku Kataoka, Masato Inagi, Shinobu Nagayama, Shin'ichi Wakabayashi (Hiroshima City Univ.) VLD2019-51 DC2019-75
In lithography, which is one of the semiconductor manufacturing processes, there is a pattern that is highly likely to c... [more] VLD2019-51 DC2019-75
pp.185-190
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2019-11-15
16:35
Ehime Ehime Prefecture Gender Equality Center Mask Optimization Considering Process Variation by Subgradient Method
Yukihide Kohira, Rina Azuma (Univ. of Aizu), Tomomi Matsui, Atsushi Takahashi (Tokyo Tech), Chikaaki Kodama (KIOXIA) VLD2019-53 DC2019-77
Due to miniaturization of process technology, progressing manufacturing process by optical lithography is required. In r... [more] VLD2019-53 DC2019-77
pp.197-202
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2018-12-07
14:10
Hiroshima Satellite Campus Hiroshima Process Variation-aware Model-based OPC using 0-1 Quadratic Programming
Rina Azuma, Yukihide Kohira (Univ. of Aizu), Tomomi Matsui, Atsushi Takahashi (Tokyo Tech), Chikaaki Kodama, Shigeki Nojima (TMC) VLD2018-70 DC2018-56
Due to continuous shrinking of Critical Dimensions (CD) of layout pattern in VLSI, advances of manufacturing process in ... [more] VLD2018-70 DC2018-56
pp.209-214
VLD, IPSJ-SLDM 2018-05-16
15:50
Fukuoka Kitakyushu International Conference Center Pixel-based OPC using Quadratic Programming for Mask Optimization
Rina Azuma, Yukihide Kohira (Univ. of Aizu) VLD2018-3
Due to continuous shrinking of Critical Dimensions (CD) in semiconductor manufacturing, advance of process technology in... [more] VLD2018-3
pp.31-36
VLD, HWS
(Joint)
2018-03-01
09:00
Okinawa Okinawa Seinen Kaikan A Study of Lithography Hotspot Detection Method Based on Feature Vectors Considering Distances between Wires
Gaku Kataoka, Masato Inagi, Shinobu Nagayama, Shin'ichi Wakabayashi (Hiroshima City Univ.) VLD2017-105
In lithography, which is one of the LSI fabrication processes, a layout pattern with a high failure probability is calle... [more] VLD2017-105
pp.97-102
VLD, HWS
(Joint)
2018-03-01
09:25
Okinawa Okinawa Seinen Kaikan Efficient Generation of Lithography Hotspot Detector based on Transfer Learning
Shuhei Suzuki, Yoichi Tomioka (UoA) VLD2017-106
As semiconductor features shrink in size, the fidelity of the layout pattern transferred onto the wafer decreases. A layo... [more] VLD2017-106
pp.103-108
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2018-01-26
09:50
Shizuoka Shizuoka Univ., Hamamatsu Liquid Crystal Devices Having the V-Groove Structure by Nano-Imprint Lithography
Kota Haruna, Hiroyuki Okada (Univ. of Toyama) EID2017-41
For non-rubbing alignment method applicable to flexible liquid crystals (LCs), LC cells with a V-groove alignment layer ... [more] EID2017-41
pp.65-68
SDM, EID 2017-12-22
10:30
Kyoto Kyoto University Light trapping effect of nanoimprinted texture for thin crystalline silicon solar cell
Nakai Yuya, Ishikawa Yasuaki, Uraoka Yukiharu (NAIST) EID2017-11 SDM2017-72
For the purpose of the realization of thin-type crystal silicon solar cells, a light trapping effect in a light absorpti... [more] EID2017-11 SDM2017-72
pp.1-4
ED 2017-08-09
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. Large area uniform processing characterization using synchrotron radiation deep X-ray lithography system (BL11)
Masaya Takeuchi, Akinobu Yamaguchi, Utsumi Yuichi (Univ. of Hyogo) ED2017-29
We developed new deep X-ray lithography system (BL11) to fabricate high aspect ratio three-dimensional microstructure at... [more] ED2017-29
pp.17-18
ICD 2017-04-20
13:00
Tokyo   [Invited Talk] Study on Nano-Dot Structure Permanent Memory
Tsuyoshi Watanabe, Noriyuki Miura, Shijia Liu, Shigeki Imai, Makoto Nagata (Kobe Univ.) ICD2017-4
We propose a permanent digital memory system in which data is saved by a presence of metal nano-dot at interconnects of ... [more] ICD2017-4
pp.17-22
OME, SDM 2017-04-20
16:45
Kagoshima Tatsugochou Shougaigakushuu Center A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator
Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda (Tokyo Tech) SDM2017-4 OME2017-4
High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effec... [more] SDM2017-4 OME2017-4
pp.15-18
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