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Technical Committee on Silicon Device and Materials (SDM)  (2018)

Chair: Hiroshige Hirano (TowerPartners Semiconductor) Vice Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.)
Secretary: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)
Assistant: Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.)

Search Results: Keywords 'from:2018-10-17 to:2018-10-17'

[Go to Official SDM Homepage (Japanese)] 
Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-10-17
14:00
Miyagi Niche, Tohoku Univ. [Invited Talk] Fin-FET MONOS for Next Generation Automotive-MCU
Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Yasuo Yamaguchi, Tomohiro Yamashita (Renesas) SDM2018-52
 [more] SDM2018-52
pp.1-5
SDM 2018-10-17
14:50
Miyagi Niche, Tohoku Univ. New piezoelectric materials by RF sputtering process and applications to sensor
Fuminobu Imaizumi (NIT, Oyama College), kousuke Yanagida SDM2018-53
 [more] SDM2018-53
pp.7-10
SDM 2018-10-17
15:20
Miyagi Niche, Tohoku Univ. Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating
Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] SDM2018-54
pp.11-14
SDM 2018-10-17
16:05
Miyagi Niche, Tohoku Univ. Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process
Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-55
We have reported nonvolatile memory characteristics of Hf-based MONOS diodes were improved by using atomically flat Si(1... [more] SDM2018-55
pp.15-19
SDM 2018-10-17
16:35
Miyagi Niche, Tohoku Univ. [Invited Talk] Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States
Shogo Hatayama, Yuji Sutou, Daisuke Ando, Junichi Koike (Tohoku Univ.) SDM2018-56
Phase change random access memory (PCRAM) has attracted much attention as one of next generation non-volatile memory. Ge... [more] SDM2018-56
pp.21-26
SDM 2018-10-18
09:30
Miyagi Niche, Tohoku Univ. [Invited Talk] A lesson from Kumamoto earthquake disaster at Sony Semiconductor Manufacturing Kumamoto Technology Center
Hiromi Suzuki (Kumamoto Univ.), Yasuhiro Ueda (Sony Corp.) SDM2018-57
(To be available after the conference date) [more] SDM2018-57
pp.27-30
SDM 2018-10-18
10:20
Miyagi Niche, Tohoku Univ. Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering
Min Gee Kim, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-58
In this study, we investigated thin film formation of ferroelectric undoped HfO2 directly deposited on p-Si(100). By po... [more] SDM2018-58
pp.31-34
SDM 2018-10-18
10:50
Miyagi Niche, Tohoku Univ. Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process
Rengie Mark D. Mailig, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-59
In this paper, the reduction of the Schottky barrier height (SBH) of Pd2Si/Si(100) diodes by the dopant segregation (DS)... [more] SDM2018-59
pp.35-40
SDM 2018-10-18
13:00
Miyagi Niche, Tohoku Univ. Improvement of Pentacene/SiO2 Interface Properties by the N-doped LaB6 Interfacial Layer
Yasutaka Maeda, Kyung Eun Park, Yuki Komatsu, Shun-ichiro Ohmi (Tokyo Tech) SDM2018-60
We have reported that the effect of nitrogen-doped LaB6 interfacial layer on the improvement of pentacene-based device c... [more] SDM2018-60
pp.41-45
SDM 2018-10-18
13:30
Miyagi Niche, Tohoku Univ. Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy
Ryo Yokogawa (Meiji Univ.), Motohiro Tomita, Takanobu Watanabe (Waseda Univ.), Atsushi Ogura (Meiji Univ.) SDM2018-61
Silicon nanowire (SiNW) is expected to be a new attractive thermoelectric material with excellent performance with low t... [more] SDM2018-61
pp.47-50
SDM 2018-10-18
14:00
Miyagi Niche, Tohoku Univ. Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain
Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2018-62
In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability an... [more] SDM2018-62
pp.51-56
SDM 2018-10-18
14:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Promotion of Silicon Island in Kumamoto area and reconstruction from the earthquake disaster -- How to develop Japanese semiconductor industry with academia collaboration --
Hiroshi Kubota (Kumamoto Univ.) SDM2018-63
After the reconstruction from the Kumamoto earthquake disaster, I will return to the origin of industry-university colla... [more] SDM2018-63
pp.57-61
 Results 1 - 12 of 12  /   
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