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Technical Committee on Lasers and Quantum Electronics (LQE)  (Searched in: 2013)

Search Results: Keywords 'from:2013-05-17 to:2013-05-17'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 16 of 16  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, LSJ 2013-05-17
09:05
Ishikawa   An Analysis of the Noise Reduction Effect by Superposition of High Frequency Current in Semiconductor Lasers
Sazzad Imran, Minoru Yamada (Kanazawa Univ.) LQE2013-1
Semiconductor lasers tend to generate excess intensity noise called the optical feedback (OFB) noise. Superposition of h... [more] LQE2013-1
pp.1-6
LQE, LSJ 2013-05-17
09:30
Ishikawa   High Efficiency Laser-Diode-Pumped Ytterbium-Doped Yttrium Alminium Garnet Laser
Naoya Shimojo, Daisuke Kimura, Masatoshi Nishio, Akiyuki Maruko, Hiroaki Okunishi, Kento Kato, Keisuke Kyomoto, Takeshi Yoshida, Sakae Kawato (Univ. of Fukui) LQE2013-2
(To be available after the conference date) [more] LQE2013-2
pp.7-10
LQE, LSJ 2013-05-17
09:55
Ishikawa   Consideration of the S/N ratio in the Semiconductor Optical Amplifier
Kazuki Higuchi, Nobuhito Takeuchi, Minoru Yamada (Kanazawa Univ.) LQE2013-3
Characteristics of the amplification and intensity noise in the semiconductor optical amplifier (SOA) for the intensity ... [more] LQE2013-3
pp.11-16
LQE, LSJ 2013-05-17
10:20
Ishikawa   Physical-random number generation using laser diode's frequency noise -- Consideration about the influence of laser diode's linewidth --
Takahiro Saito, Hideaki Arai, Genichi Furukawa, Shota Sakai, Takashi Sato, Shuichi Sakamoto, Masashi Ohkawa (Niigata Univ.) LQE2013-4
(To be available after the conference date) [more] LQE2013-4
pp.17-21
LQE, LSJ 2013-05-17
11:00
Ishikawa   Shorter Wavelength Side Shift of a Vertical Cavity Surface Emitting Laser in a magnetic field
Keiko Kono, Otohiro Iijima (Niigata Univ.), Kohei Doi (Tohoku gakuin Univ.), Shinichi Tabira, Takashi Sato, Masashi Ohkawa (Niigata Univ.) LQE2013-5
 [more] LQE2013-5
pp.23-26
LQE, LSJ 2013-05-17
11:25
Ishikawa   Highly Sensitive EO Sampling of Terahertz Wave Using Super-focusing Effect
Satoshi Tsuzuki, Daiki Takeshima, Tomoya Sakon, Tetsuya Kinoshita, Tomohiro Nagase, Shinpei Ozawa, Kazuyoshi Kurihara, Kohji Yamamoto (Univ. of Fukui), Fumiyoshi Kuwashima (FUT), Takashi Furuya, Seiji Nishizawa (Univ. of Fukui), Michael I. Bakunov (Univ. Nizhny Novgorod), Kodo Kawase (Nagoya Univ.), Masahiko Tani (Univ. of Fukui) LQE2013-6
 [more] LQE2013-6
pp.27-30
LQE, LSJ 2013-05-17
11:50
Ishikawa   Highly efficient coupling photons from single photon source utilizing a nanofiber tip
Sho Chonan, Shinya Kato, Takao Aoki (Waseda Univ.) LQE2013-7
 [more] LQE2013-7
pp.31-34
LQE, LSJ 2013-05-17
13:15
Ishikawa   [Invited Talk] Entangled photon pair generation using a semiconductor quantum dot cascade
Takashi Kuroda, Takaaki Mano, Kazuaki Sakoda (NIMS), Hideaki Nakajima, Hidekazu Kumano, Ikuo Suemune (Hokkaido Univ.) LQE2013-8
We are able to create an entangled photon source using a two-photon emission cascade in a semiconductor quantum dot. The... [more] LQE2013-8
pp.35-40
LQE, LSJ 2013-05-17
13:50
Ishikawa   Metal-embedded Nanocone Structure Incorporating an InAs QD for Efficient Single-photon Emission
Xiangming Liu, Tomoya Asano, Satoru Odashima, Hideaki Nakajima, Hidekazu Kumano, Ikuo Suemune (Hokkaido Univ.) LQE2013-9
Single-photon sources of high photon-extraction efficiency are strongly needed for the practical use in quantum field. W... [more] LQE2013-9
pp.41-44
LQE, LSJ 2013-05-17
14:15
Ishikawa   Transfer and retrieval of telecom-wavelength picoseconds single-photon qubits to quantum dots
Kazumasa Suzuki, Koichiro Konichi (Keio Univ.), Kouichi Akahane (NICT), Junko Ishi-Hayase (Keio Univ.) LQE2013-10
We demonstrate the coherent transfer and retrieval of picosecound single-photon time-bin qubits to a quantum dot ensembl... [more] LQE2013-10
pp.45-48
LQE, LSJ 2013-05-17
14:40
Ishikawa   Two-mode lasing of wavelength tunable quantum dot laser
Kouichi Akahane, Naokatsu Yamamoto, Atsushi Kanno, Keizo Inagaki, Toshimasa Umezawa, Tetsuya Kawanishi (NICT), Takashi Endo, Yasunori Tomomatsu, Toshio Yamanoi (Koshin Kogaku) LQE2013-11
A two-wavelength emission laser can be used to generate millimeter and terahertz waves by irradiating high speed photodi... [more] LQE2013-11
pp.49-52
LQE, LSJ 2013-05-17
15:20
Ishikawa   Optical and spin properties of nitrogen-vacancy centers in diamond fabricated using nitrogen-doped isotopically-enriched chemical vapor deposition
Tomohiro Gomi, Shuhei Tomizawa (Keio Univ.), Hideyuki Watanabe, Hitoshi Umezawa, Shin-ichi Shikata (AIST), Kohei M. Itoh, Junko Ishi-Hayase (Keio Univ.) LQE2013-12
An electronic spin state of nitrogen-vacancy (NV) centers in diamond is expected as an promising candidate for quantum i... [more] LQE2013-12
pp.53-56
LQE, LSJ 2013-05-17
15:45
Ishikawa   Spectrum measurement using optically trapped gold nanoparticle
Akira Sato, Yoshio Hayasaki (Utsunomiya Univ.) LQE2013-13
Gold nanoparticle cause localized surface plasmon resonance, which enhances an incident wave. The scattering light spect... [more] LQE2013-13
pp.57-61
LQE, LSJ 2013-05-17
16:10
Ishikawa   Two-wavelength simultaneous interference observation of femtosecond-laser-induced phenomena observation
Shinichi Fukuda, Yoshio Hayasaki (Utsunomiya Univ.) LQE2013-14
We observe phenomenon induced by an irradiation of a femtosecond laser pulse. It helps to know pulse parameter in the fe... [more] LQE2013-14
pp.63-66
LQE, LSJ 2013-05-17
16:35
Ishikawa   GHz Response of MSM InGaAs Photodetector on Si Substrate by BCB Bonding
Kazuaki Maekita, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.) LQE2013-15
To realize an optical interconnect, it is necessary to integrate light sources and photodetectors on the silicon platfor... [more] LQE2013-15
pp.67-70
LQE, LSJ 2013-05-17
17:00
Ishikawa   High-Speed Response of Avalanche photodiode fabricated by 0.18um standard CMOS process
Toshiyuki Shimotori, Ryoichi Gyobu, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.) LQE2013-16
Si avalanche photodiodes (APDs) with different electrode spacing are fabricated by 0.18 m standard CMOS process,... [more] LQE2013-16
pp.71-74
 Results 1 - 16 of 16  /   
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