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Technical Committee on Integrated Circuits and Devices (ICD) (Searched in: 2011)
Search Results: Keywords 'from:2011-04-18 to:2011-04-18'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD | 2011-04-18 10:00 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
Trends and Multi-level-cell Technology of Spin Transfer Torque Memory Takashi Ishigaki, Takayuki Kawahara, Riichiro Takemura, Kazuo Ono, Kenchi Ito (Hitachi), Hideo Ohno (Tohoku U.)  ICD2011-1 |
A MLC (Multi-level cell) SPRAM (Spin transfer torque RAM) with series-stacked MTJs (Magnetic tunnel junctions) was devel... [more] | ICD2011-1 pp.1-5 |
| ICD | 2011-04-18 10:50 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
A Technical Trend and Embedded DRAM Technology for High-Performance NAND Flash Memories Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii (Toshiba) ICD2011-2 |
In this paper, first, the technical trend for high-bandwidth NAND flash memories is introduced. Second, an embedded DRAM... [more] | ICD2011-2 pp.7-12 |
| ICD | 2011-04-18 11:40 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
ReRAM Test Macro with High Speed Read/Program Circuit
-- Conductive Bridge ReRAM with 2.3GB/s Read throughput and 216MB/s Program-throughput -- Keiichi Tsutsui, Wataru Otsuka, Koji Miyata, Makoto Kitagawa, Tomohito Tsushima (Sony) ICD2011-3 |
In this work, we present a 4Mb conductive bridge ReRAM test macro realizing 2.3GB/s read-throughput, 216MB/s program-thr... [more] | ICD2011-3 pp.13-18 |
| ICD | 2011-04-18 13:30 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
Technology Trend of NAND Flash Memories
-- A 151mm2 64Gb 2b/cell NAND Flash Memory in 24nm CMOS Technology -- Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Junpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai (Toshiba), Kiyofumi Sakurai (Toshiba Memory Systems), Toru Miwa (SanDisk) ICD2011-4 |
A 64Gbit 2bit/cell NAND flash memory capable of 14MB/s programming and 266MB/s data transfer is fabricated in 24nm techn... [more] | ICD2011-4 pp.19-26 |
| ICD | 2011-04-18 14:20 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
Highly reliable low power SSD
-- Data modulation signal processing technologies of memory cotroller -- Ken Takeuchi, Shuhei Tanakamaru, Chinglin Hung (Univ. Tokyo) ICD2011-5 |
[more] | ICD2011-5 pp.27-32 |
| ICD | 2011-04-18 15:20 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
Trend in Phase Change Memory and activity in TIA Norikatsu Takaura (LEAP) ICD2011-6 |
This paper reports on trend in phase change memory (PCM) and research activity in Tsukuba Innovation Arena (TIA) . We di... [more] | ICD2011-6 pp.33-36 |
| ICD | 2011-04-18 16:10 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
3-Dimensional NAND Flash memories Seiichi Aritome (Hynix) ICD2011-7 |
3-Dimensional NAND flash memory technologies are reviewed. First, scaling limitation of current planar Floating-gate a... [more] | ICD2011-7 pp.37-42 |
| ICD | 2011-04-19 09:30 |
Hyogo | Kobe University Takigawa Memorial Hall | 0.45-V Operating Vt-Variation Tolerant 9T/18T Dual-Port SRAM Koji Yanagida, Hiroki Noguchi, Shunsuke Okumura, Tomoya Takagi, Koji Kugata (Kobe Univ.), Masahiko Yoshimoto (Kobe Univ./JST), Hiroshi Kawaguchi (Kobe Univ.) ICD2011-8 |
We proposes a dependable dual-port SRAM with 9T/18T bitcell structure. The proposed SRAM has two operating modes: a 9T n... [more] | ICD2011-8 pp.43-48 |
| ICD | 2011-04-19 09:55 |
Hyogo | Kobe University Takigawa Memorial Hall | A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers Yusuke Niki, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yuki Fujimura, Tomoaki Yabe (Toshiba) ICD2011-9 |
A digitized replica bitline delay technique has been proposed for random-variation-tolerant timing generation of static ... [more] | ICD2011-9 pp.49-54 |
| ICD | 2011-04-19 10:20 |
Hyogo | Kobe University Takigawa Memorial Hall | Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs Koichi Takeda, Toshio Saito, Shinobu Asayama, Yoshiharu Aimoto, Hiroyuki Kobatake, Shinya Ito, Toshifumi Takahashi, Kiyoshi Takeuchi, Masahiro Nomura, Yoshihiro Hayashi (Renesas Electronics) ICD2011-10 |
[more] | ICD2011-10 pp.55-58 |
| ICD | 2011-04-19 10:55 |
Hyogo | Kobe University Takigawa Memorial Hall | 0.5-V FinFET SRAM Using Dynamic-Threshold-Voltage Pass Gates Shin-ichi O'uchi, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST) ICD2011-11 |
This article presents a FinFET SRAM which salvages malfunctioned bits caused by random variation. In the presenting SRAM... [more] | ICD2011-11 pp.59-63 |
| ICD | 2011-04-19 11:20 |
Hyogo | Kobe University Takigawa Memorial Hall | 0.5-V, 5.5-nsec Access Time, Bulk-CMOS 8T SRAM with Suspended Bit-Line Read Scheme Toshikazu Suzuki, Shinichi Moriwaki, Atsushi Kawasumi, Shinji Miyano, Hirofumi Shinohara (STARC) ICD2011-12 |
A low-voltage high-speed bulk-CMOS 8T SRAM is proposed. A novel 8-transistor (8T) memory cell with a complementary read ... [more] | ICD2011-12 pp.65-70 |
| ICD | 2011-04-19 11:45 |
Hyogo | Kobe University Takigawa Memorial Hall | Suppress of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor Kousuke Miyaji, Kentaro Honda, Shuhei Tanakamaru (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) ICD2011-13 |
8T-SRAM cell with asymmetric pass gate transistor by local electron injection is proposed to solve half select disturb. ... [more] | ICD2011-13 pp.71-76 |
| ICD | 2011-04-19 13:10 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
A 12Gb/s Non-Contact Interface with Coupled Transmission Lines Tsutomu Takeya, Lan Nan, Shinya Nakano, Noriyuki Miura, Hiroki Ishikuro, Tadahiro Kuroda (Keio Univ.) ICD2011-14 |
This paper presents the novel approach for high speed non-contact memory card interfaces. The proposed scheme using coup... [more] | ICD2011-14 pp.77-80 |
| ICD | 2011-04-19 14:00 |
Hyogo | Kobe University Takigawa Memorial Hall | 1-Tbyte/s 1-Gbit Multicore DRAM Architecture using 3-D Integration for High-throughput Computing Kazuo Ono, Yoshimitsu Yanagawa, Akira Kotabe, Tomonori Sekiguchi (Hitachi, CRL) ICD2011-15 |
A novel multicore DRAM architecture with an ultra high bandwidth and a large capacity is proposed for high throughput co... [more] | ICD2011-15 pp.81-86 |
| ICD | 2011-04-19 14:25 |
Hyogo | Kobe University Takigawa Memorial Hall | Design of Program-voltage(20V) Booster and TSV for High Speed and Low Power 3-D Solid State Drive System Teruyoshi Hatanaka, Koh Johguchi, Koichi Ishida, Tadashi Yasufuku, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Univ. of Tokyo) ICD2011-16 |
A design of high speed and low power high-voltage generator system that includes a program-voltage (20V) booster and TSV... [more] | ICD2011-16 pp.87-92 |
| ICD | 2011-04-19 15:00 |
Hyogo | Kobe University Takigawa Memorial Hall | Basic memory characteristics of HfO2-CB-RAM Shigeyuki Tsuruta (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./ TEDREC), Tatsuya Nakabayashi (Tottori Univ.), Satoru Kishida (Tottori Univ./ TEDREC) ICD2011-17 |
CB-RAM (Conducting Bridge Random Access Memory) is expected as a candidate for a nonvolatile memory and a switch for the... [more] | ICD2011-17 pp.93-97 |
| ICD | 2011-04-19 15:25 |
Hyogo | Kobe University Takigawa Memorial Hall | Physical Analysis on ReRAM Filaments Using Atomic Force Microscope Takatoshi Yoda (Tottori Univ.), Kentaro Kinoshita, Satoru Kishida (Tottori University/TEDREC), Toshiya Ogiwara, Hideo Iwai, Sei Fukushima, Shigeo Tanuma (NIMS) ICD2011-18 |
[more] | ICD2011-18 pp.99-104 |
| ICD | 2011-04-19 15:50 |
Hyogo | Kobe University Takigawa Memorial Hall | Switching Mechanism of Perovskite-Oxide-Based Resistive Random Access Memory (ReRAM) Akihiro Hanada (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./TEDREC), Katsuhiko Matsubara, Takahiro Fukuhara (Tottori Univ.), Satoru Kishida (Tottori Univ./TEDREC) ICD2011-19 |
We prepared resistive random access memory (ReRAM) structures of Al / Bi2Sr2CaCu2O8+δ (Bi-2212) bulk single crystal / Pt... [more] | ICD2011-19 pp.105-109 |
| ICD | 2011-04-19 16:15 |
Hyogo | Kobe University Takigawa Memorial Hall | Analyses on Co-relation between Low and High Resistance States in ReRAM Consisting of Binary-Transition-Metal-Oxides Hayato Tanaka (Tottori Univ), Kentaro Kinoshita, Satoru Kishida (Tottori Univ./TEDREC) ICD2011-20 |
Resistive Random Access Memory (ReRAM) is attracting attention as a non-volatile memory for the next generation. The con... [more] | ICD2011-20 pp.111-116 |
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